Topic
Schottky barrier
About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.
Papers published on a yearly basis
Papers
More filters
TL;DR: Ultraviolet-sensitive photodiodes have been made using the Schottky barrier formed in the contact layer between a thin sputtered layer of ZnO and Au by optimizing the sputtering parameters and the IV characteristics and the sensitivity spectra were investigated.
Abstract: Ultraviolet-sensitive photodiodes have been made using the Schottky barrier formed in the contact layer between a thin sputtered layer of ZnO and Au. The sputtering parameters for the ZnO layer were optimized. The IV characteristics and the sensitivity spectra of the ZnO–Au photodiodes were investigated.
98 citations
IBM1
TL;DR: In this article, a model of Schottky barrier formation based on intrinsic interface or surface states suggests Fermi-level pinning at or near some effective mid-gap energy, which can be calculated directly from the bulk semiconductor band structure.
98 citations
TL;DR: It is proposed that the Schottky junction formed between metal and silicon plays an essential role on the distribution of holes in silicon injected from hydrogen peroxide.
Abstract: Metal-assisted chemical etching (MACE) is a versatile anisotropic etch for silicon although its mechanism is not well understood. Here we propose that the Schottky junction formed between metal and silicon plays an essential role on the distribution of holes in silicon injected from hydrogen peroxide. The proposed mechanism can be used to explain the dependence of the etching kinetics on the doping level, doping type, crystallographic surface direction, and etchant solution composition. We used the doping dependence of the reaction to fabricate a novel etch stop for the reaction.
98 citations
TL;DR: In this paper, the dark and illuminated currentvoltage characteristics of GaN and InGaN MSM photodetectors with different Schottky metals were studied, and the effect of the pitch width between the interdigitate fingers and the thickness of Schotty metals on the characteristics of photocurrents were also studied.
Abstract: The characterizations of n-type doped GaN, p-type doped GaN and n-type doped In0.2Ga0.8N Schottky metal-semiconductor-metal (MSM) photodetectors were reported. The epilayers were grown on sapphire by metalorganic chemical vapor deposition (MOVCD). Schottky contacts were fabricated using Au, Ti, Ni and Pt metals. The dark and illuminated current–voltage characteristics of GaN and InGaN MSM photodetectors with different Schottky metals were studied. The n-GaN MSM photodetectors with Au Schottky contacts showed better responsivity than those with other metals and they were also better than Au/p-GaN and Ti/n-In0.2Ga0.8N MSMs. The effects of the pitch width between the interdigitate fingers and the thickness of Schottky metals on the characteristics of photocurrents were also studied.
98 citations
TL;DR: In this paper, a tunneling-assisted Poole-Frenkel (TAPF) mechanism was proposed to precisely describe the electrical conduction behavior of a Pt∕HfO2∕Si capacitor, which represents electron tunneling from a metal electrode to traps in a nearby insulator layer followed by detrapping of the electrons from the traps by virtue of a lowered potential well due to an applied electric field.
Abstract: Tunneling-assisted Poole-Frenkel (TAPF) mechanism, which represents electron tunneling from a metal electrode to traps in a nearby insulator layer followed by detrapping of the electrons from the traps by virtue of a lowered potential well due to an applied electric field, is suggested in this study to precisely describe the electrical conduction behavior of a Pt∕HfO2∕Si capacitor. The current density versus the applied electric-field curves of the TAPF conduction show a similar electric-field dependency to that of the Poole-Frenkel (PF) conduction. However, unlike the PF mechanism, the activation energy of the leakage current density corresponds to the value of the Schottky barrier height (SBH) of a metal/insulator junction minus a lowered potential-well height by the applied electric field in the TAPF mechanism. In addition, the SBH of the Pt∕HfO2 junction is calculated considering a high space-charge density (>∼1018cm−3) in the HfO2 layer. The measured activation energy for the electrical conduction fr...
97 citations