Topic
Schottky barrier
About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.
Papers published on a yearly basis
Papers
More filters
TL;DR: Improved sensitivity of a 2D MoS2-based gas sensor is demonstrated by controlling the Schottky barrier height and the NO2 responsivity increased, and it was found to be effective for CO and CO2 gases, which had little reactivity in 2DMoS2 -based gas sensors.
Abstract: Two-dimensional (2D) transition-metal dichalcogenides have attracted significant attention as gas-sensing materials owing to their superior responsivity at room temperature and their possible application as flexible electronic devices. Especially, reliable responsivity and selectivity for various environmentally harmful gases are the main requirements for the future chemiresistive-type gas sensor applications. In this study, we demonstrate improved sensitivity of a 2D MoS2-based gas sensor by controlling the Schottky barrier height. Chemical vapor deposition process was performed at low temperature to obtain layer-controlled 2D MoS2, and the NO2 gas responsivity was confirmed by the fabricated gas sensor. Then, the number of MoS2 layers was fixed and the types of electrode materials were varied for controlling the Schottky barrier height. As the Schottky barrier height increased, the NO2 responsivity increased, and it was found to be effective for CO and CO2 gases, which had little reactivity in 2D MoS2-b...
93 citations
TL;DR: In this article, the Ni/Au layers prepared by electron beam evaporation and thermal alloying were used to form Ohmic contacts on p-type GaN films.
Abstract: In this study, the Ni/Au layers prepared by electron beam evaporation and thermal alloying were used to form Ohmic contacts on p-type GaN films. Before thermal alloying, the current–voltage (I–V) characteristic of Ni/Au contact on p-type GaN film shows non-Ohmic behavior. As the alloying temperature increases to 700 °C, the I–V curve shows a characteristic of Ohmic contact. The Schottky barrier height reduction may be attributed to the presence of Ga–Ni and Ga–Au compounds, such as Ga4Ni3, Ga3Ni2, GaAu, and GaAu2, at the metal-semiconductor interface. The diffusing behavior of both Ni and Au have been studied by using Auger electron spectroscopy and Rutherford backscattering spectrometry. In addition, x-ray diffraction measurements indicate that the Ni3N and Ga4Ni3 compounds were formed at the metal-semiconductor interface.
93 citations
TL;DR: In this article, sulfur (S) segregation was exploited to attain a record-low electron barrier height (PhiB N) of 110 meV for platinum-based silicide contacts.
Abstract: In this letter, sulfur (S) segregation was exploited to attain a record-low electron barrier height (PhiB N) of 110 meV for platinum-based silicide contacts. Sulfur-incorporated PtSi:C/Si:C contacts were also demonstrated in strained FinFETs with Si:C source/drain stressors. Incorporation of sulfur at the PtSi:C/Si:C interface in the source/drain regions of FinFETs provides a 51% improvement in external resistances and a 45% enhancement in drive current as compared to devices without S segregation. The remarkable reduction in PhiB N is explained using charge transfer and dipole formation at the silicide/semiconductor interface with S segregation.
93 citations
TL;DR: In this paper, the photoresponse of Pb(Zr0.53Ti0.47)O3 (PZT) thin films was studied by measuring the currentvoltage (I-V) curve at several ferroelectric polarization states illuminated by a monochromatic 3.5 eV UV light.
Abstract: We studied the photoresponse of Pb(Zr0.53Ti0.47)O3 (PZT) thin films by measuring the current–voltage (I–V) curve at several ferroelectric polarization states illuminated by a monochromatic 3.5 eV UV light. The photocurrent in Pt/PZT/Pt capacitors was sensitive to the polarization state, and the poling voltage-dependent photocurrent showed very asymmetric hysteresis behavior. The capacitance that is dependent upon the thickness of the samples was first measured. Then, the capacitance of the interfacial layer at a state with no interdiffusion between Pt and PZT film was extrapolated by using an equivalent circuit model. The result of the extrapolation was 28.1 μF/cm2.
93 citations
TL;DR: The work function of the Pt(111) surface was measured in ultrahigh vacuum with use of the photoelectron-threshold-yield technique, resulting in a value of 6.06 eV as discussed by the authors.
Abstract: The work function of the Pt(111) surface was measured in ultrahigh vacuum with use of the photoelectron-threshold-yield technique, resulting in a value of \ensuremath{\Phi}=6.10\ifmmode\pm\else\textpm\fi{}0.06 eV.
93 citations