Topic
Schottky barrier
About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.
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TL;DR: In this article, a back-to-back double Schottky barrier model is employed to analyze the defect chemistry in the depletion layer and a numerical simulation is employed for analyzing the defect properties.
93 citations
TL;DR: In this article, theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor is investigated, and the effect of spin-dependent interface resistance that results from a tunneling region at the contact/semiconductor interface is described.
Abstract: We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy and semiconductor doping density. The effect of a spin-dependent interface resistance that results from a tunneling region at the contact/semiconductor interface is described. The model can serve as a guide for designing spin-injection experiments with regard to the interface properties and device structure.
93 citations
TL;DR: Carbon nanotube Schottky diodes were fabricated using asymmetric metal-nanotube contacts as discussed by the authors, which were prepared from semiconducting single-walled carbon nanotubes contacted by one Al or Ti electrode and one Au electrode.
Abstract: Carbon nanotube Schottky diodes were fabricated using asymmetric metal-nanotube contacts. These devices were prepared from semiconducting single-walled carbon nanotubes contacted by one Al or Ti electrode and one Au electrode. Nanotubes formed a low resistance contact with the Au electrode and a Schottky contact with the Al or Ti electrode. Electronic transport through the Schottky barriers was determined by the competition between tunneling and thermionic emission, which could be tuned by a back gate voltage.
93 citations
11 Apr 2002-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, the I-V characteristics of CdZnTe (CZT) detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Bridgman process were analyzed.
Abstract: In this paper, we present studies of the I- V characteristics of CdZnTe (CZT) detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Bridgman process. We have analyzed the experimental I- V curves using a model that approximates the CZT detector as a system consisting of a reversed Schottky contact, in series with the bulk resistance. Least-square fit to the experimental data yields 0.78- 0.79 eV for the Pt-CZT Schottky barrier height, and <20V for the voltage required to deplete a 2mm thick CZT detector. We demonstrate that, at high bias, the thermionic current over the Schottky barrier, the height of which is reduced due to an interfacial layer between the contact and CZT material, controls the leakage current of the detectors. In many cases, the dark current is not determined by the resistivity of the bulk material, but rather the properties of the contacts; namely, by the interfacial layer between the contact and CZT material.
93 citations
TL;DR: In this paper, a sub-30-nm gate length pMOSFET with platinum silicide Schottky-barrier source and drain is reported, which exhibits a cutoff frequency of 280 GHz, the highest reported for a silicon MOS transistor.
Abstract: High-speed results on sub-30-nm gate length pMOSFETs with platinum silicide Schottky-barrier source and drain are reported. With inherently low series resistance and high drive current, these deeply scaled transistors are promising for high-speed analog applications. The fabrication process simplicity is compelling with no implants required. A sub-30-nm gate length pMOSFET exhibited a cutoff frequency of 280 GHz, which is the highest reported to date for a silicon MOS transistor. Off-state leakage current can be easily controlled by augmenting the Schottky barrier height with an optional blanket As implant. Using this approach, good digital performance was also demonstrated.
93 citations