Topic
Schottky barrier
About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.
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TL;DR: In this paper, the theoretical and experimental current-voltage characteristics of 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are discussed.
Abstract: The theoretical and experimental current–voltage characteristics of 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) are discussed. The manufactured 50-nm-gate-length n-type SB-MOSFET shows large on/off current ratio with low leakage current less than 10−4 μA/μm. The saturation current is 120 μA/μm when drain and gate voltage is 1 and 3 V, respectively. The experimental current–voltage characteristics of 50-nm-gate-length n-type SB-MOSFET are fitted using newly developed theoretical model. From the theoretical analysis, the off- and on-current is mainly attributed to the thermionic and tunneling current, respectively. The decrease of tunneling distance at silicon/silicide Schottky junction with the increase of drain voltage gives the increase of tunneling current. This phenomenon is explained by using drain-induced Schottky barrier thickness thinning effect.
92 citations
TL;DR: It is shown that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices using a 2D self-consistent simulation of the conduction band profile.
Abstract: We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs=AlGaAs devices. Via a 2D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor through the Schottky barrier, consistent with the effect of ‘‘bias cooling.’’ Upon noise reduction, the noise power spectrum generally changes from Lorentzian to 1/f type. By comparing wafers with different Al content, we exclude that DX centers play a dominant role in the charge noise.
92 citations
TL;DR: In this paper, a vertical GaN Schottky barrier diodes (SBDs) fabricated on a free-standing GaN substrate with different sizes of Schottkey electrode was reported.
Abstract: This paper reports on vertical GaN Schottky barrier diodes (SBDs) fabricated on a free-standing GaN substrate with different sizes of Schottky electrode. The fabricated SBDs with 3 ? 3 mm2 Schottky electrodes exhibited both a forward current of 50 A and a blocking voltage of 790 V. To our knowledge, the characteristics of operation with a simultaneous high forward current and high blocking voltage are reported for the first time for vertical GaN SBDs on free-standing GaN substrates. The dependence of these characteristics on the Schottky electrode size is also reported in detail.
92 citations
TL;DR: In this article, the authors present a general model of the frequency dependence of conductance and capacitance in Schottky diodes and obtain independent, consistent values of the depletion width and of the density of states at the Fermi level and below from both conductance at low and high modulation frequencies.
Abstract: We present a general model of the frequency dependence of conductance and capacitance in a‐Si:H Schottky diodes. In order to circumvent several questionable assumptions required in the analysis of capacitance voltage characteristics, the frequency dependence of sputtered a‐Si:H devices is measured with no applied dc voltage. We obtain independent, consistent values of the depletion width and of the density of states at the Fermi level and below from both conductance and capacitance at both low and high modulation frequencies. We show that the linear frequency dependence of conductance cannot be attributed to hopping conductance, but rather to the interaction of gap states with free carriers. Our study shows that the interaction kinetics of the states around the Fermi level with the conduction‐band carriers is so fast that the response of the diode is limited by the band transport of these carriers, which rapidly thermalize and distribute themselves through the continuum of states from the conduction band ...
92 citations
TL;DR: Self-powered photodetectors based on photovoltaic effect are able to be operated without external bias and the photogenerated electron–hole pairs can be separated at zero bias and thus contribute to the photoconduction.
Abstract: restricted due to the local perturbations within the device depletion regions. [ 8,9 ] Self-powered photodetectors based on photovoltaic effect are able to be operated without external bias. [ 3,10–12 ] Attributed to the large existing built-in electrical potential in self-powered photodetectors, the photogenerated electron–hole pairs can be separated at zero bias and thus contribute to the photoconduction. [ 3 ]
92 citations