Topic
Schottky barrier
About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.
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TL;DR: In this article, a diamond Schottky barrier diodes with a thick field plate has been developed, and the diamond VSBD with a 30 µm square (8.8×10-6 cm2) electrode shows specific on-resistance and blocking voltage, such as 29.3 mΩ cm2 (3.3 kΩ) and 842 V at room temperature, respectively.
Abstract: Vertical-structured diamond Schottky barrier diodes with a thick field plate have been developed. The diamond VSBD with a 30 µm square (8.8×10-6 cm2) Schottky electrode shows specific on-resistance and blocking voltage, such as 29.3 mΩ cm2 (3.3 kΩ) and 842 V at room temperature, respectively, however, the lower specific on-resistance with a constant blocking voltage such as 9.4 mΩ cm2 (1 kΩ) and 840 V, respectively, have been realized at 250 °C. As a result, Baliga's figure of merit (BVBD2/RonS) is improved from 24.1 to 75.3 MW/cm2. This value is the best in diamond diodes at present. The diamond VSBD with a 1,000 µm square (9.7×10-3 cm2) Schottky electrode shows high forward current and low on-resistance, such as more than 5 A and 10.2 mΩ cm2 (1.04 Ω), respectively, at 250 °C. The estimated parasitic resistance of the SBD is less than 0.04 Ω.
89 citations
TL;DR: Graphene-on-silicon Schottky junction solar cells were prepared with pillar-array patterned silicon substrate as discussed by the authors, which showed an anti-reflective characteristic and led to an absorption enhancement of the solar cell, which showed enhanced performance with shortcircuit current density, open-circuit voltage, fill factor, and energy conversion efficiency.
Abstract: Graphene-on-silicon Schottky junction solar cells were prepared with pillar-array-patterned silicon substrate. Such patterned substrate showed an anti-reflective characteristic and led to an absorption enhancement of the solar cell, which showed enhanced performance with short-circuit current density, open-circuit voltage, fill factor, and energy conversion efficiency of 464.86 mV, 14.58 mA/cm2, 0.29, and 1.96%, respectively. Nitric acid was used to dope graphene film and the cell performance showed a great improvement with efficiency increasing to 3.55%. This is due to the p-type chemical doping effect of HNO3 which increases the work function and the carrier density of graphene.
89 citations
TL;DR: In this article, the influence of localized surface plasmon resonance on hot electron flow at a metal-semiconductor interface was observed with a Schottky diode composed of a thin silver layer on TiO2.
Abstract: Over the last several decades, innovative light-harvesting devices have evolved to achieve high-efficiency solar energy transfer. Understanding the mechanism of plasmon resonance is very desirable to overcome the conventional efficiency limits of photovoltaics. The influence of localized surface plasmon resonance on hot electron flow at a metal–semiconductor interface was observed with a Schottky diode composed of a thin silver layer on TiO2; subsequent X-ray photoelectron spectroscopy characterized how oxygen in the Ag/TiO2 nanodiode influenced the Schottky barrier height. Photoexcited electrons generate photocurrent when they have enough energy to travel over the Schottky barrier formed at the metal–semiconductor interface. We observed that the photocurrent could be enhanced by optically excited surface plasmons. When the surface plasmons are excited on the corrugated Ag metal surface, they decay into energetic hot electron–hole pairs, contributing to the total photocurrent. The abnormal resonance peaks...
89 citations
TL;DR: In this article, a hierarchical 2D-Bi2MoO6@2D-MXene nanohybrid was proposed to suppress the agglomeration of Bi2MoMo6 nanosheets and improve the specific surface area to maximize the exposed activity sites.
89 citations
TL;DR: In this paper, an indium-silicon co-doping approach for high-Al-content AlGaN layers was proposed and very smooth crack-free n-type Al-GaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates.
Abstract: We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×1017 cm−3 and the Hall mobility was up to 40 cm2/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrier photodetectors with the cut-off wavelength of 278 nm.
89 citations