Schottky barrier

About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.

Carbon nanotube electronics

Abstract: Presents experimental results on single-wall carbon nanotube field-effect transistors (CNFETs) operating at gate and drain voltages below 1V. Taking into account the extremely small diameter of the semiconducting tubes used as active components, electrical characteristics are comparable with state-of-the-art metal oxide semiconductor field-effect transistors (MOSFETs). While output as well as subthreshold characteristics resemble those of conventional MOSFETs, we find that CNFET operation is actually controlled by Schottky barriers (SBs) in the source and drain region instead of by the nanotube itself. Due to the small size of the contact region between the electrode and the nanotube, these barriers can be extremely thin, enabling good performance of SB-CNFETs.

InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications

Abstract: A review is presented of the properties of interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors based on the InGaAs-InP material system, and the performance achieved by experimental devices is discussed. The experimental work concentrates on the barrier-enhanced lattice-matched InAlAs-InGaAs device grown by low pressure organometallic chemical vapor deposition (OMCVD), which has to date yielded detectors with the highest performance characteristics. Current research on their integration with FETs to form monolithic receivers and with waveguides for on-chip optical signal processing is also included. >

Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

Abstract: The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (RC). Here we present a systematic study of scaling MoS2 devices and contacts with varying electrode metals and controlled deposition conditions, over a wide range of temperatures (80 to 500 K), carrier densities (1012 to 1013 cm–2), and contact dimensions (20 to 500 nm). We uncover that Au deposited in ultra-high vacuum (∼10–9 Torr) yields three times lower RC than under normal conditions, reaching 740 Ω·μm and specific contact resistivity 3 × 10–7 Ω·cm2, stable for over four months. Modeling reveals separate RC contributions from the Schottky barrier and the series access resistance, providing key insights on how to further improve scaling of MoS2 contacts and transistor dimensions. The contact transfer length is ∼35 nm at 300 K, which is verified experimentally using devices with 20 nm contacts and 70 nm contact pitch (CP), equivalent to the “14 nm” technology node.

Grain Boundary Blocking Effect in Zirconia: A Schottky Barrier Analysis

Abstract: The grain boundary electrical properties of high purity ZrO 2 ceramic materials doped with 2, 3, and 8 mol % Y 2 O 3 , and 8 mol % Y 2 O 3 co-doped with 0.4 mol % Al 2 O 3 were studied in the temperature range of 200 to 500°C by electrochemical techniques and were theoretically analyzed. Although the presence of a siliceous phase is shown to be a major cause for the grain boundary blocking effect, the grain boundary properties appear to he significantly influenced by space charges, particularly in materials of high purity. The oxygen vacancy distribution and the grain boundary resistivity were calculated for 8 mol % Y 2 O 3 doped ZrO 2 by assuming double Schottky barriers, and the results were compared with the experiment. It is shown that reasonable space charge potentials lead to grain boundary effects which are consistent with the experimental features. In contrary to the bulk in which defect associates prevail (at temperatures <560°C), in the boundary regions, association effects can be assumed to be much less pronounced due to the vacancy depletion.