Topic
Schottky barrier
About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.
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TL;DR: In this article, the authors evaluated the temporal and thermal stability of a few-layer phosphorene MOSFET with Al2O3 surface passivation and Ti/Au top gate.
Abstract: This letter evaluates temporal and thermal stability of a state-of-the-art few-layer phosphorene MOSFET with Al2O3 surface passivation and Ti/Au top gate. As fabricated, the phosphorene MOSFET was stable in atmosphere for at least 100 h. With annealing at 200 °C in dry nitrogen for 1 h, its drain current increased by an order of magnitude to $\sim 100$ mA/mm, which could be attributed to the reduction of trapped charge in Al2O 3 and/or Schottky barrier at the source and drain contacts. Thereafter, the drain current was stable between −50 °C and 150 °C up to at least 2000 h. These promising results suggest that environmental protection of phosphorene should not be a major concern, and passivation of phosphorene should focus on its effect on electronic control and transport as in conventional silicon MOSFETs. With cutoff frequencies approaching the gigahertz range, the present phosphorene MOSFET, although far from being optimized, can meet the speed and stability requirements of most flexible electronics for which phosphorene is intrinsically advantageous due to its corrugated lattice structure.
88 citations
TL;DR: In this article, the authors demonstrate that Si growth can electrochemically be initiated preferentially at surface defects created in an $n$-type Si substrate by focused ion beam bombardment.
Abstract: We report a principle that allows one to write visible light emitting silicon patterns of arbitrary shape down to the submicrometer scale. We demonstrate that porous Si growth can electrochemically be initiated preferentially at surface defects created in an $n$-type Si substrate by ${\mathrm{Si}}^{++}$ focused ion beam bombardment. For $n$-type material in the dark, the electrochemical pore formation potential (Schottky barrier breakdown voltage) is significantly lower at the implanted locations than for an unimplanted surface. This difference in the threshold voltages is exploited to achieve the selectivity of the pore formation process.
88 citations
TL;DR: In this article, the currentvoltage characteristics of Schottky junctions formed by using aluminum on polypyrrole, poly(N-methyl pyrrole) and the copolymer poly(n-methyl polyyrrole-poly(Pyrrole)-poly(n) poly(P.P.R.
Abstract: The current–voltage characteristics of Schottky junctions formed by using aluminum on polypyrrole, poly(N-methyl pyrrole) and the copolymer poly(N-methyl pyrrole–pyrrole) have been investigated. The formation of the junctions has been confirmed by capacitance–voltage characteristics and Chot plots. The results have been explained on the basis of thermionic emission theory.
88 citations
TL;DR: In this article, the photovoltaic effect in a metal/semiconductor/ferroelectric/metal heterostructure of In2O3-SnO2/ZnO/BiFeO3/Pt multilayer thin films was studied.
Abstract: We have studied the photovoltaic effect in a metal/semiconductor/ferroelectric/metal heterostructure of In2O3-SnO2/ZnO/BiFeO3/Pt (ITO/ZnO/BFO/Pt) multilayer thin films. The heterolayered structure shows a short-circuit current density (Jsc) of 340 μA/cm2 and an energy conversion efficiency of up to 0.33% under blue monochromatic illumination. The photovoltaic mechanism, specifically in terms of the major generation site of photo-excited electron-hole (e-h) pairs and the driving forces for the separation of e-h pairs, is clarified. The significant increase in photocurrent of the ITO/ZnO/BFO/Pt compared to that of ITO/BFO/Pt is attributed to the abundant e-h pairs generated from ZnO. Ultraviolet photoelectron spectroscopy reveals the energy band alignment of ITO/ZnO/BFO/Pt, where a Schottky barrier and an n+-n junction are formed at the BFO/Pt and ZnO/BFO interfaces, respectively. Therefore, two built-in fields developed at the two interfaces are constructively responsible for the separation and transport o...
88 citations
TL;DR: It was shown that the MIL-100(Fe)/Ti3C2 MXene composite not only has higher thermal stability but also has a significantly increased activity in nitrogen fixation under visible-light.
Abstract: A new microporous MIL-100(Fe)/Ti3C2 MXene composite was constructed as a non-noble metal-based Schottky junction photocatalyst with improved nitrogen fixation ability. Ti3C2 MXene nanosheets exhibited excellent metal conductivity and were employed as two-dimensional support to optimize the composite's energy band structure. MIL-100(Fe) with a large specific surface area was used as an adsorbent and a photocatalytic oxidation center. The MIL-100(Fe)/Ti3C2 MXene composite not only exhibited higher thermal stability but also showed significantly increased nitrogen fixation activity under visible light. The NO conversion rate of the composite catalyst was about four and three times higher than that of the pure Ti3C2 MXene and the pure MIL-100(Fe) samples, respectively. Although adsorption plays an important role in the nitrogen fixation process, the synergistic effects of the Schottky junctions are the main cause of the enhanced photocatalytic activity. The built-in electric field can be generated to form charge-transfer channels, which help to achieve a desirable photocatalytic activity.
88 citations