Topic
Schottky barrier
About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.
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TL;DR: It is found that bulk electric conduction in ferroelectric monodomain BiFeO3 crystals is highly nonlinear and unidirectional.
Abstract: Unidirectional electric current flow, such as that found in a diode, is essential for modern electronics. It usually occurs at asymmetric interfaces such as p-n junctions or metal/semiconductor interfaces with Schottky barriers. We report on a diode effect associated with the direction of bulk electric polarization in BiFeO3: a ferroelectric with a small optical gap edge of ∼2.2 electron volts. We found that bulk electric conduction in ferroelectric monodomain BiFeO3 crystals is highly nonlinear and unidirectional. This diode effect switches its direction when the electric polarization is flipped by an external voltage. A substantial visible-light photovoltaic effect is observed in BiFeO3 diode structures. These results should improve understanding of charge conduction mechanisms in leaky ferroelectrics and advance the design of switchable devices combining ferroelectric, electronic, and optical functionalities.
1,610 citations
TL;DR: In this paper, a theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film.
Abstract: A theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film. A generalized approach is taken towards the interface states which considers their communication with both the metal and the semiconductor. Diodes were fabricated with interfacial films ranging from 8 to 26 A in thickness, and their characteristics are related to this model. The effects of reduced transmission coefficients together with fixed charge in the film are investigated. The interpretation of the current-voltage characteristics and the validity of the C−2-V method in the determination of diffusion potentials are discussed.
1,519 citations
TL;DR: In this article, a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltages measurements on spatially inhomogeneous Schottky contacts is presented.
Abstract: We present a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltage measurements on spatially inhomogeneous Schottky contacts. A new evaluation schema of current and capacitance barriers permits a quantitative analysis of spatially distributed Schottky barriers. In addition, our analysis shows also that the ideality coefficient n of abrupt Schottky contacts reflects the deformation of the barrier distribution under applied bias; a general temperature dependence for the ideality n is predicted. Our model offers a solution for the so‐called T0 problem. Not only our own measurements on PtSi/Si diodes, but also previously published ideality data for Schottky diodes on Si, GaAs, and InP agree with our theory.
1,439 citations
TL;DR: Results suggest that the formation mechanism of the Schottky barrier is locally nonuniform at common, polycrystalline, metal-semiconductor interfaces.
Abstract: A dipole-layer approach is presented, which leads to analytic solutions to the potential and the electronic transport at metal-semiconductor interfaces with arbitrary Schottky-barrier-height profiles. The presence of inhomogeneities in the Schottky-barrier height is shown to lead to a coherent explanation of many anomalies in the experimental results. These results suggest that the formation mechanism of the Schottky barrier is locally nonuniform at common, polycrystalline, metal-semiconductor interfaces.
1,347 citations
TL;DR: In this article, the authors derived voltage-current characteristics for field and T-F emission in the forward and reverse regime of Schottky barriers formed on highly doped semiconductors.
Abstract: Field emission and thermionic-field (T-F) emission are considered as the phenomena responsible for the excess currents observed both in the forward and reverse directions of Schottky barriers formed on highly doped semiconductors. Voltage-current characteristics are derived for field and thermionic-field emission in the forward and reverse regime. The temperatures and voltages where these phenomena are predominent for a given diode are discussed. Comparison with experimental results on GaAs and Si diodes shows good agreement between theory and experiments.
1,268 citations