Topic
Schottky barrier
About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.
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TL;DR: In this paper, a power DMOSFET structure with a monolithically integrated Schottky diode located under the source contact pad is described, which results in significantly improved internal diode switching characteristics with no degradation in the onstate resistance and drain-source breakdown voltage.
Abstract: A power DMOSFET structure with a monolithically integrated Schottky diode located under the source contact pad is described. In this structure the source contact metallization step is also used to fabricate an epitaxial drift region Schottky diode in parallel with the parasitic body p-n junction diode of the power MOSFET. Such a structure results in significantly improved internal diode switching characteristics with no degradation in the on-state resistance and drain-source breakdown voltage. The integral power MOSFET technology was used to fabricate 30- and 45-V vertical power DMOSFETs with a reduction in peak reverse current and stored charge of more than 25% as compared to a conventional power DMOSFET. The Schottky diode consumed less than 15% of the active transistor area. >
85 citations
TL;DR: In this article, the interfacial reaction between Pt films and (100) oriented n-type GaAs substrates in the temperature range between 350 and 500 °C has been studied by combining transmission electron diffraction and microscopy, glancing-incidence x-ray diffraction, and Rutherford backscattering spectroscopy.
Abstract: The interfacial reaction between Pt films and (100)‐oriented n‐type GaAs substrates in the temperature range between 350 and 500 °C has been studied by combining transmission electron diffraction and microscopy, glancing‐incidence x‐ray diffraction, and Rutherford backscattering spectroscopy. The reaction has produced PtGa and PtAs2. The phase PtAs2 has shown a strong preferred orientation on (100)GaAs and it is the phase which dominates the contact to GaAs. The orientation relation has been analyzed by using stereographic projections. Effects of the reaction on the Schottky barrier behavior have been monitored by a combination of current‐voltage, capacitance‐voltage, and photoresponse measurements. The value of the Schottky barrier height has been determined to be 0.9 eV and no strong variation of the barrier height with annealing has been observed.
85 citations
TL;DR: In this paper, the authors investigated the dielectric properties and ac electrical conductivity of (AuZn)/TiO2/p-GaAs(1/1/0) Schottky barrier diodes (SBDs) in a wide frequency and applied bias voltage ranges at room temperature.
85 citations
TL;DR: In this article, the effect of the top electrode (TE) metal on the resistive switching of (TE)/TiO"2/Pt structure was investigated, and it was confirmed that the potential barrier height between the metal and TiO" 2 is an important factor on the resistor switching characteristics.
85 citations
TL;DR: In this article, the barrier heights of Ir, Ni, and Re Schottky contacts on strained Al0.25Ga0.75N/GaN heterostructures were characterized using capacitance-voltage (C-V) and I-V techniques.
Abstract: Ir, Ni, and Re Schottky contacts on strained Al0.25Ga0.75N/GaN heterostructures are characterized using capacitance–voltage (C–V) and I–V techniques. Based on the measured C–V characteristics, two dimensional electron gas sheet carrier concentrations at the AlGaN/GaN interface and barrier heights of Ir, Ni, and Re Schottky contacts are calculated. The barrier heights of 1.12, 1.27, and 1.68 eV are obtained for Ir, Ni, and Re Schottky contacts, respectively. The results show that the barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures are strongly dependent on the metal work functions. However, contrary to Schottky contacts on bulk AlGaN or GaN, the barrier height on strained AlGaN/GaN heterostructures is lower for a Schottky contact with a higher metal work function. This is attributed to the stronger wave function coupling between electrons in the Schottky metal and surface donor electrons. The I–V characteristics for Ir, Ni, and Re Schottky contacts confirm the results obtained b...
85 citations