Topic
Schottky barrier
About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.
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TL;DR: The gigantic enhancement in sensitivity of up to 5 orders of magnitude shows that an effective usage of the Schottky contact can be very beneficial to the sensitivity of nanosensors.
Abstract: A Schottky barrier can be formed at the interface between a metal electrode and a semiconductor. The current passing through the metal-semiconductor contact is mainly controlled by the barrier height and barrier width. In conventional nanodevices, Schottky contacts are usually avoided in order to enhance the contribution made by the nanowires or nanotubes to the detected signal. We present a key idea of using the Schottky contact to achieve supersensitive and fast response nanowire-based nanosensors. We have illustrated this idea on several platforms: UV sensors, biosensors, and gas sensors. The gigantic enhancement in sensitivity of up to 5 orders of magnitude shows that an effective usage of the Schottky contact can be very beneficial to the sensitivity of nanosensors.
312 citations
TL;DR: In this paper, a new method of refrigeration is proposed by thermionic emission of electrons over Schottky barriers between metals and semiconductors, which can have only a small temperature difference.
Abstract: A new method of refrigeration is proposed. Efficient cooling is obtained by thermionic emission of electrons over Schottky barriers between metals and semiconductors. Since the barriers have to be thin, each barrier can have only a small temperature difference $(\ensuremath{\sim}1\mathrm{K})$. Macroscopic cooling is obtained with a multilayer device. The same device is also an efficient generator of electrical power. A complete analytic theory is provided.
310 citations
TL;DR: A Au/β-Ga2O3 nanowires array film vertical Schottky photodiode is successfully fabricated by a simple thermal partial oxidation process and exhibits a very low dark current of 10 pA at -30 V with a sharp cutoff at 270 nm, which is much quicker than any other previously reported β-Ga 2O3-based photodetectors.
Abstract: Because of the direct band gap of 4.9 eV, β-Ga2O3 has been considered as an ideal material for solar-blind photodetection without any bandgap tuning. Practical applications of the photodetectors require fast response speed, high signal-to-noise ratio, low energy consumption and low fabrication cost. Unfortunately, most reported β-Ga2O3-based photodetectors usually possess a relatively long response time. In addition, the β-Ga2O3 photodetectors based on bulk, the individual 1D nanostructure, and the film often suffer from the high cost, the low repeatability, and the relatively large dark current, respectively. In this paper, a Au/β-Ga2O3 nanowires array film vertical Schottky photodiode is successfully fabricated by a simple thermal partial oxidation process. The device exhibits a very low dark current of 10 pA at −30 V with a sharp cutoff at 270 nm. More interestingly, the 90–10% decay time of our device is only around 64 μs, which is much quicker than any other previously reported β-Ga2O3-based photodet...
309 citations
Book•
01 Jan 1995
TL;DR: In this article, the Schottky barrier was used to measure hyperfine interactions in a self-diffusion hyperfine interaction model, and the resulting hyperfine properties were analyzed.
Abstract: Crystal structure mechanical and thermal properties growth and phase transformations thermochemical properties band structure Schottky barrier heights heterojunctions and interfaces electrical transport optical properties and functions impurity diffusion self-diffusion hyperfine interactions.
307 citations
TL;DR: It is shown that embedding plasmonic structures into the semiconductor substantially increases hot electron emission, and Responsivities increase by 25× over planar diodes for embedding depths as small as 5 nm.
Abstract: When plasmonic nanostructures serve as the metallic counterpart of a metal–semiconductor Schottky interface, hot electrons due to plasmon decay are emitted across the Schottky barrier, generating measurable photocurrents in the semiconductor. When the plasmonic nanostructure is atop the semiconductor, only a small percentage of hot electrons are excited with a wavevector permitting transport across the Schottky barrier. Here we show that embedding plasmonic structures into the semiconductor substantially increases hot electron emission. Responsivities increase by 25× over planar diodes for embedding depths as small as 5 nm. The vertical Schottky barriers created by this geometry make the plasmon-induced hot electron process the dominant contributor to photocurrent in plasmonic nanostructure-diode-based devices.
306 citations