Topic
Schottky barrier
About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this paper, the design, fabrication, and characterization of a 130 A Schottky diode, 4.9 kV 4H-SiC SiC PiN diode and 8.6 kV SiC power diodes are described in detail.
Abstract: The present state of SiC power Schottky and PiN diodes are presented in this paper. The design, fabrication, and characterization of a 130 A Schottky diode, 4.9 kV Schottky diode, and an 8.6 kV 4H-SiC PiN diode, which are considered to be significant milestones in the development of high power SiC diodes, are described in detail. Design guidelines and practical issues for the realization of high-power SiC Schottky and PiN diodes are also presented. Experimental results on edge termination techniques applied to newly developed, extremely thick (e.g., 85 and 100 /spl mu/m) 4H-SiC epitaxial layers show promising results. Switching and high-temperature measurements prove that SiC power diodes offer extremely low loss alternatives to conventional technologies and show the promise of demonstrating efficient power circuits. At sufficiently high on-state current densities, the on-state voltage drop of Schottky and PiN diodes have been shown to be comparable to those offered by conventional technologies.
226 citations
TL;DR: It is shown that a fundamentally new transport model is needed to describe the graphene-silicon Schottky junction, and the details of the diode characteristics is best characterized by the Landauer transport formalism, suggesting that the injection rate from graphene ultimately determines the transport properties of this new Schottki junction.
Abstract: The proper understanding of semiconductor devices begins at the metal–semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors is low. Here, we extend the analysis of metal–silicon Schottky junctions by using graphene, an atomically thin semimetal. We show that a fundamentally new transport model is needed to describe the graphene–silicon Schottky junction. While the current–voltage behavior follows the celebrated ideal diode behavior, the details of the diode characteristics is best characterized by the Landauer transport formalism, suggesting that the injection rate from graphene ultimately determines the transport properties of this new Schottky junction.
225 citations
TL;DR: The experimental observation indicates that the conductivity of MoS2 devices can be actively modulated by the piezoelectric charge polarization-induced built-in electric field under strain variation, providing evidence for strain-gating monolayer MoS3 piezotronics, a promising avenue for achieving augmented functionalities in next-generation electronic and mechanical–electronic nanodevices.
Abstract: High-performance piezoelectricity in monolayer semiconducting transition metal dichalcogenides is highly desirable for the development of nanosensors, piezotronics and photo-piezotransistors. Here we report the experimental study of the theoretically predicted piezoelectric effect in triangle monolayer MoS2 devices under isotropic mechanical deformation. The experimental observation indicates that the conductivity of MoS2 devices can be actively modulated by the piezoelectric charge polarization-induced built-in electric field under strain variation. These polarization charges alter the Schottky barrier height on both contacts, resulting in a barrier height increase with increasing compressive strain and decrease with increasing tensile strain. The underlying mechanism of strain-induced in-plane charge polarization is proposed and discussed using energy band diagrams. In addition, a new type of MoS2 strain/force sensor built using a monolayer MoS2 triangle is also demonstrated. Our results provide evidence for strain-gating monolayer MoS2 piezotronics, a promising avenue for achieving augmented functionalities in next-generation electronic and mechanical-electronic nanodevices.
224 citations
TL;DR: The SBHs of the better behaved Si/silicide interfaces can be used to benchmark the behavior of the less well behaved Ge-germanide interfaces for this purpose and the dependence of the SBH of epitaxial Pb-Si(111) on its reconstruction is covered.
Abstract: Density functional supercell calculations of the Schottky barrier heights (SBH) of metal germanides and silicides on Si or Ge find that these vary with the facet, unlike those of elemental metals. In addition, silicides and germanides show a stronger dependence of their SBHs on the work function than those of elemental metals, as seen experimentally. Both effects are beyond the standard metal induced gap states model. NiSi2 is found to have a much lower SBH on n-Si(100) than on n-Si(111), as seen experimentally. It is shown how such results can be used to design lower SBH contacts for n-Ge, which are needed technologically. The SBHs of the better behaved Si/silicide interfaces can be used to benchmark the behavior of the less well behaved Ge-germanide interfaces for this purpose. The dependence of the SBH of epitaxial Pb-Si(111) on its reconstruction is also covered.
223 citations
TL;DR: In this paper, the authors reviewed the mechanism focusing on how Schottky barrier and SPR phenomena help to improve a photoreaction, as well as the paradox between the SBS and SPR in the matter of the direction of electron flow in the metal/semiconductor system.
222 citations