Topic
Schottky barrier
About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.
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TL;DR: Barrier heights of Ag n-Si (111)-7 × 7 and − 1 × 1 Schottky contacts were determined from their currentvoltage and capacitance-voltage characteristics.
200 citations
TL;DR: This work investigates the field-effect transistor behavior of MoS2 with ferromagnetic contacts to explore its potential for spintronics and reveals that such integration of ferrom magnetic tunnel contacts opens up the possibilities for MoS1-based spintronic devices.
Abstract: Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nanoelectronic, optoelectronic, and spintronic applications. Here, we investigate the field-effect transistor behavior of MoS2 with ferromagnetic contacts to explore its potential for spintronics. In such devices, we elucidate that the presence of a large Schottky barrier resistance at the MoS2/ferromagnet interface is a major obstacle for the electrical spin injection and detection. We circumvent this problem by a reduction in the Schottky barrier height with the introduction of a thin TiO2 tunnel barrier between the ferromagnet and MoS2. This results in an enhancement of the transistor on-state current by 2 orders of magnitude and an increment in the field-effect mobility by a factor of 6. Our magnetoresistance calculation reveals that such integration of ferromagnetic tunnel contacts opens up the possibilities for MoS2-based spintronic devices.
200 citations
TL;DR: In this paper, an epitaxial layer of n−Ga1−xInxAs grown by molecular beam epitaxy on n•GaAs which is graded in composition from x = 0 at the GaAs interface to 0.8?x?1.0 at the surface will produce a structure with a nearly zero Schottky barrier height for the metal-Ga 1−xAs interface and hence a low resistance ohmic contact.
Abstract: Ohmic contacts were studied on structures which utilize the fact that for InAs surfaces Fermi level pinning occurs at or in the conduction band. It was found that an epitaxial layer of n‐Ga1−xInxAs grown by molecular beam epitaxy on n‐GaAs which is graded in composition from x = 0 at the GaAs interface to 0.8?x?1.0 at the surface will produce a structure with a nearly zero Schottky barrier height for the metal–Ga1−xInxAs interface and hence a low resistance ohmic contact. A transmission line measurement of non‐alloyed contact resistance of 5×10−7
200 citations
15 Jun 2004
TL;DR: In this paper, the dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated, and the DS-SBT fabricated with the current CoSi/sub 2/process show competitive drive current and better short-channel effect immunity compared to the conventional MOSFET.
Abstract: A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi/sub 2/ process show competitive drive current and better short-channel-effect immunity compared to the conventional MOSFET. In conclusion the DS-Schottky junction is useful for the source/drain of advanced MOSFETs.
200 citations
TL;DR: In this article, a GaN-based Schottky diodes with catalytically active platinum electrodes was used to detect hydrogen in high-temperature gas sensor devices and the results indicated an interfacial effect as the origin of the sensor response to hydrogen.
Abstract: Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing GaN-based Schottky diodes with catalytically active platinum electrodes to hydrogen, we observed a decrease of the rectifying characteristics which we attribute to a decrease in Schottky barrier height. Current–voltage and elastic recoil detection measurements were used to investigate the H-sensing behavior of such devices. Our results indicate an interfacial effect as the origin of the sensor response to hydrogen.
200 citations