Topic
Schottky barrier
About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.
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TL;DR: Measured capacitance in excess of the space-charge capacitance is shown to be caused by the injection of minority carriers into the bulk semiconductor, rather than by the presence of interface states, as previously thought.
Abstract: We identify the physical origin of the excess capacitance at Schottky diodes without an interfacial layer, i.e., intimate Schottky contacts. Measured capacitance in excess of the space-charge capacitance is shown to be caused by the injection of minority carriers into the bulk semiconductor, rather than by the presence of interface states, as previously thought. Minority-carrier injection depends sensitively on the properties of the Ohmic back-contact.
199 citations
TL;DR: In this paper, the authors demonstrate the promising applications of ZnO NW Schottky barrier as high performance UV photodetector with high sensitivity and fast recovery speed, and the physical mechanisms of the fast recovery properties have also been discussed.
Abstract: ZnO nanowire (NW) ultraviolet (UV) photodetectors have high sensitivity, while the long recovery time is an important limitation for its applications. In this paper, we demonstrate the promising applications of ZnO NW Schottky barrier as high performance UV photodetector with high sensitivity and fast recovery speed. The on/off ratio, sensitivity, and photocurrent gain are 4 × 105, 2.6 × 103 A/W, and 8.5 × 103, respectively. The recovery time is 0.28 s when photocurrent decreases by 3 orders of magnitude, and the corresponding time constant is as short as 46 ms. The physical mechanisms of the fast recovery properties have also been discussed.
199 citations
TL;DR: In this article, a lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-on-insulator was proposed, which utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body.
Abstract: We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-on-insulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.
197 citations
197 citations
Abstract: Taking as a device model ITO|TPD|Alq3|Al (where TPD is N,N′-bis(3-methylphenyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine and Alq3 is tris(quinolin-8-olato)aluminium) it is shown that control and improvement of carrier injection may be achieved using self-assembled monolayers (SAMs) to manipulate the Schottky energy barrier at the ITO–TPD interface. By using polar adsorbate molecules with the dipole oriented outward from the surface an artificial dipolar layer is formed and the work function is increased, and viceversa. With this method the threshold voltage for light emission (turn-on) can be reduced by 4 V and the maximum luminance increased by a factor of 3.5, giving an overall performance superior to that using the more stable Ag/Mg counter electrode. The SAMs effect is confirmed using a Scanning Kelvin Probe (SKP) to profile the relative work function of half-coated ITO samples. Increases in work function in excess of 0.3 eV are observed, in line with predictions using the calculated molecular dipoles of the SAM molecules.
197 citations