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Schottky barrier

About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.


Papers
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Journal ArticleDOI
TL;DR: In this article, a new transistor structure has been reported in which a thin tungsten grating has been embedded inside a single crystal of gallium arsenide, which is the base of the transistor and can be used to raise and lower a potential barrier in the semiconductor between the grating lines.
Abstract: A new transistor structure has been reported in which a thin tungsten grating has been embedded inside a single crystal of gallium arsenide. The embedded metal grating, which forms a Schottky barrier with the gallium arsenide, is the base of the transistor and can be used to raise and lower a potential barrier in the semiconductor between the grating lines. The name given to this device is the permeable base transistor (PBT). Devices have been fabricated with a noise figure of 3.5 dB, an associated gain of 9 dB at 4 GHz, and a maximum frequency of oscillation of 17 GHz. This transistor structure is numerically modeled over a wide range of metal grating thicknesses, periodicities, and carrier concentrations. The results from these simulations have been condensed into a unified equation for the base-to-collector transfer characteristic which is valid for the PBT, FET's, and bipolar transistors, and simplifies the comparison between different device structures. A new iterative technique has been used to approximate the nonequilibrium electron velocity, leading to a predicted f T above 200 GHz, a maximum frequency of oscillation near 1000 GHz and a power-delay product below 1 fJ for devices with small grating dimensions and large carder concentrations.

193 citations

Journal ArticleDOI
TL;DR: Schottky barriers of Ti, Cr, Au, Pd, Ni and Pt on n-type GaN epitaxial layers grown by low-pressure metal-organic chemical vapour deposition on sapphire have been fabricated and characterized as mentioned in this paper.
Abstract: Schottky barriers of Ti, Cr, Au, Pd, Ni and Pt on n-type GaN epitaxial layers grown by low-pressure metal-organic chemical vapour deposition on sapphire have been fabricated and characterized. Measurements were carried out using current - voltage (I - V), current - voltage - temperature (I -V - T) and capacitance - voltage (C - V) techniques. A modified Norde plot was used as one of the analysis tools for the I - V - T measurements. The barrier heights, ideality factors and effective Richardson constants are presented. Barrier heights of 0.88, 0.92, 0.99 and 1.08 eV for Au, Pd, Ni and Pt respectively were obtained from the modified Norde plot. Contacts of Ti and Cr exhibited only slightly rectifying characteristics. These results show that the barrier height on n-GaN increases monotonically, but does not scale proportionately, with increasing metal workfunction.

193 citations

Patent
20 Dec 1994
TL;DR: In this article, a switching element is provided with two electrodes (1, 2) with a semiconducting dielectric (3) therebetween, one electrode (2) having a material which forms a Schottky contact with the semiconductor dielectrics (3), while a space charge region (3') of the Schottiness contact forms a tunnelling barrier for electrons during operation.
Abstract: A switching element is provided with two electrodes (1, 2) with a semiconducting dielectric (3) therebetween, one electrode (2) having a material which forms a Schottky contact with the semiconducting dielectric (3), while a space charge region (3') of the Schottky contact forms a tunnelling barrier for electrons during operation. It is desirable in many applications for the switching element to hold a certain switching state, such as open or closed, during a longer period. The switching element may then be used, for example, as a memory element. The dielectric (3) includes a ferroelectric material with a remanent polarization which influences a dimension of the tunnelling barrier. In this manner the switching element has various switching states depending on the remanent polarization of the dielectric (3). These switching states are held until the polarization of the dielectric (3) changes.

192 citations

Journal ArticleDOI
TL;DR: In this paper, a method for enhancing effective Schottky barrier heights in III-V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed.
Abstract: A method for enhancing effective Schottky barrier heights in III–V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/AlxGa1−xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for AlxGa1−xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al0.25Ga0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al0.25Ga0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current–voltage measurements performed on Schottky diodes.

192 citations

Journal ArticleDOI
07 Feb 2019-ACS Nano
TL;DR: The photoplasticity of the artificial synapse has been modulated by heterosynaptic means with a sub-1 V external voltage, not only enabling an optoelectronic analog of the mechanical aperture device showing adaptive and stable optical perception capability under different illuminating conditions but also making the artificialsynapse suitable for the mimicry of interest-modulated human visual memories.
Abstract: The rapid development of artificial intelligence techniques and future advanced robot systems sparks emergent demand on the accurate perception and understanding of the external environments via visual sensing systems that can co-locate the self-adaptive detecting, processing, and memorizing of optical signals. In this contribution, a simple indium–tin oxide/Nb-doped SrTiO3 (ITO/Nb:SrTiO3) heterojunction artificial optoelectronic synapse is proposed and demonstrated. Through the light and electric field co-modulation of the Schottky barrier profile at the ITO/Nb:SrTiO3 interface, the oxide heterojunction device can respond to the entire visible light region in a neuromorphic manner, allowing synaptic paired-pulse facilitation, short/long-term memory, and “learning-experience” behavior for optical information manipulation. More importantly, the photoplasticity of the artificial synapse has been modulated by heterosynaptic means with a sub-1 V external voltage, not only enabling an optoelectronic analog of ...

192 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023565
2022988
2021672
2020758
2019824
2018847