Schottky barrier

About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.

Position dependent photodetector from large area reduced graphene oxide thin films

Abstract: We fabricated large area infrared photodetector devices from thin film of chemically reduced graphene oxide (RGO) sheets and studied their photoresponse as a function of laser position. We found that the photocurrent either increases, decreases, or remain almost zero depending upon the position of the laser spot with respect to the electrodes. The position sensitive photoresponse is explained by Schottky barrier modulation at the RGO film-electrode interface. The time response of the photocurrent is dramatically slower than single sheet of graphene possibly due to disorder from the chemical synthesis and interconnecting sheets.

Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN

Abstract: Using first-principles calculations, we systematically investigated the electronic properties of graphene/g-GaN van der Waals (vdW) heterostructures. We discovered that the Dirac cone of graphene could be quite well preserved in the vdW heterostructures. Moreover, a transition from an n-type to p-type Schottky contact at the graphene/g-GaN interface was induced with a decreased interlayer distance from 4.5 to 2.5 A. This relationship is expected to enable effective control of the Schottky barrier, which is an important development in the design of Schottky devices.

Depletion Capacitance and Diffusion Potential of Gallium Phosphide Schottky‐Barrier Diodes

Abstract: The diffusion potential VBO and the intercept V0 of the 1/C2 vs bias plots for n‐type GaP‐metal Schottky‐Barrier diodes have been measured. Photoresponse measurements indicate that VBO is not sensitive to the thickness δ of the interfacial separation between the GaP and the metal; V0 is observed to increase rapidly with δ. The 1/C2 plots are linear in all cases, with slopes independent of V0. The values for the donor density ND, calculated in the usual way from slopes of the 1/C2 plots, seem to agree within experimental error with ND calculated from the resistivity of the GaP.Several models are proposed for the metal‐interfacial‐layer‐semiconductor system in order to explain this behavior. The GaP‐metal diodes are shown to be best characterized by a model which includes a bias‐dependent charge in surface states at the semiconductor surface.

Exfoliated multilayer MoTe2 field-effect transistors

Abstract: The properties of multilayer exfoliated MoTe2 field-effect transistors (FETs) on SiO2 were investigated for channel thicknesses from 6 to 44 monolayers (MLs). All transistors showed p-type conductivity at zero back-gate bias. For channel thicknesses of 8 ML or less, the transistors exhibited ambipolar characteristics. ON/OFF current ratio was greatest, 1 × 105, for the transistor with the thinnest channel, 6 ML. Devices showed a clear photoresponse to wavelengths between 510 and 1080 nm at room temperature. Temperature-dependent current-voltage measurements were performed on a FET with 30 layers of MoTe2. When the channel is turned-on and p-type, the temperature dependence is barrier-limited by the Au/Ti/MoTe2 contact with a hole activation energy of 0.13 eV. A long channel transistor model with Schottky barrier contacts is shown to be consistent with the common-source characteristics.

A Dual-Band Multilayer InSe Self-Powered Photodetector with High Performance Induced by Surface Plasmon Resonance and Asymmetric Schottky Junction

Abstract: A dual-band self-powered photodetector (SPPD) with high sensitivity is realized by a facile combination of InSe Schottky diode and Au plasmonic nanoparticle (NP) arrays. Comparing with pristine InSe devices, InSe/Au photodetectors possess an additional capability of photodetection in visible to near-infrared (NIR) region. This intriguing phenomenon is attributed to the wavelength selective enhancement of pristine responsivities by hybridized quadrupole plasmons resonance of Au NPs. It is worth pointing out that the maximum of enhancement ratio in responsivity reaches up to ∼1200% at a wavelength of 685 nm. In addition, owing to a large Schottky barrier difference formed between active layer and two asymmetric electrodes, the responsivities of dual-band InSe/Au photodetector could reach up to 369 and 244 mA/W at the wavelength of 365 and 685 nm under zero bias voltage, respectively. This work would provide an additional opportunity for developing multifunctional photodetectors with high performance based o...