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Schottky barrier

About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.


Papers
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Journal ArticleDOI
TL;DR: The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.
Abstract: Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5–20 cm2/V·s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V·s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.

157 citations

Patent
Sei-Hyung Ryu1
24 Apr 2003
TL;DR: The Schottky diode may have an active area less than the active area of a built-in body diode of the DMOSFET as mentioned in this paper, and it may have a turn-on voltage lower than that of the body diodes.
Abstract: Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices have a silicon carbide DMOSFET and an integral silicon carbide Schottky diode configured to at least partially bypass a built in diode of the DMOSFET. The Schottky diode may be a junction barrier Schottky diode and may have a turn-on voltage lower than a turn-on voltage of a built-in body diode of the DMOSFET. The Schottky diode may have an active area less than an active area of the DMOSFET.

157 citations

Journal ArticleDOI
TL;DR: In this article, a thin Ge3N4 layer is introduced to reduce Fermi level pinning and allow the formation of Ohmic contacts on moderately, n-type doped Ge layers.
Abstract: Severe Fermi level pinning at the interface between n-Ge and a metal leads to the formation of a Schottky barrier, almost independent on the metal work function. Therefore, it seems impossible to form metal Ohmic contacts on moderately, n-type doped Ge layers. For p-type Ge, the Fermi level pinning works opposite: all metal contacts show Ohmic behavior. This fixed behavior can be altered by the introduction of a thin Ge3N4 layer. Ge3N4 seems effective in reducing Fermi level pinning and, therefore, allows the formation of Ohmic contacts on n-type Ge and a rectifying contact on p-type Ge.

156 citations

Patent
28 Aug 1990
TL;DR: In this paper, a multicellular FET structure with a Schottky barrier diode structure interspersed therewith with at least some of the FET cells being free of the barrier portions.
Abstract: A semiconductor power switching device comprises a multicellular FET structure with a Schottky barrier diode structure interspersed therewith with at least some of the FET cells being free of Schottky barrier portions. The ratio of Schottky barrier contact area to FET cell area in the overall device may be adjusted to tailor the device for operation at specific current densities.

156 citations

Journal ArticleDOI
TL;DR: In this paper, an analysis of the forward I-V data of the Schottky barriers formed by Au, Ni and Cr on n-type Si, and of two commercially available Schittky barrier diodes (Fairchild's FH-1100 and Hewlett-Packard's HP-2900) is presented.

156 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023565
2022988
2021672
2020758
2019824
2018847