Schottky barrier

About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.

Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

Abstract: The dependence of the Schottky barrier height of Ni/AlxGa1−xN contact on the Al mole fraction up to x=0.23 was studied. The barrier heights were measured by I–V, capacitance–voltage, and the internal photoemission method. The Al mole fractions were estimated from the AlGaN band gap energies measured by photoluminescence. In the range of x<0.2 a linear relationship between the barrier height and Al mole fraction was obtained. This was consistent with the slope predicted by the Schottky rule. For x=0.23, the measured barrier height was lower than predicted. We believed this was due to crystalline defects at the Ni/AlGaN interface.

Study of forward I‐V plot for Schottky diodes with high series resistance

Abstract: The current‐voltage characteristics for Schottky barrier diodes with series resistance are discussed. It is shown that by using Norde’s function F(V)=V/2−(kT/q)ln(I/SAT2) at two different temperatures, barrier height, n‐value or ideality factor, and series resistance can be determined even in the case 1

Semiconductor heterostructure diodes

Abstract: Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2DEG, forming an ohmic contact with the layer containing the 2DEG.

Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current-voltage and capacitance-voltage methods

Abstract: The electrical characterization of the Al/poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV)/p-Si structure has been investigated by current–voltage and capacitance–voltage methods. The Al/MEH-PPV/p-Si Schottky diode with the ideality factor value of 1.88 obeys a metal–interfacial layer–semiconductor (MIS) configuration rather than an ideal Schottky diode due to the existence of an insulating layer on the organic semiconductor. The barrier height ( Φ b , o = 0.80 eV ) obtained from the I–V characteristic is lower than the barrier height ( Φ b , o = 1.19 eV ) obtained from the C–V characteristic. The discrepancy between Φ b , o ( I – V ) and Φ b , o ( C – V ) can be due to the existence of the interfacial native oxide and the organic MEH-PPV layers between the semiconductor and Schottky contact metal. The barrier height value for the Al/MEH-PPV film/p-Si/Al contact obtained at the room temperature that is significantly larger than that for the conventional Al/p-Si Schottky diode. The density distribution curves of the interface states is in the range (0.32-Ev) to (0.68-Ev)eV. The interface state density Nss ranges from 3.84×1014 cm−2 eV−1 in (0.32-Ev)eV to 1×1014 cm−2 eV−1 in (0.68-Ev)eV, of the Al/MEH-PPV/p-Si. The interface state density has an exponential rise with bias from the midgap towards the top of the valence band of the p-Si.

Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

Abstract: We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, we propose a model based on two slightly asymmetric back-to-back Schottky barriers, where the highest current arises from image force barrier lowering at the electrically forced junction, while the reverse current is due to Schottky-barrier limited injection at the grounded junction. The device achieves a photo responsivity greater than 2.5 AW-1 under 5 mWcm-2 white-LED light. By comparing two- and four-probe measurements, we demonstrate that the hysteresis and persistent photoconductivity exhibited by the transistor are peculiarities of the MoS2 channel rather than effects of the Ti/MoS2 interface.