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Schottky barrier

About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.


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Journal ArticleDOI
23 Jan 2017-ACS Nano
TL;DR: The experimental study on Fermi level pinning of monolayer MoS2 and MoTe2 is reported by interpreting the thermionic emission results and it is found that Rc is exponentially proportional to SBH, and these processing parameters can be controlled sensitively upon chemical doping into the 2D materials.
Abstract: Electrical metal contacts to two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) are found to be the key bottleneck to the realization of high device performance due to strong Fermi level pinning and high contact resistances (Rc). Until now, Fermi level pinning of monolayer TMDCs has been reported only theoretically, although that of bulk TMDCs has been reported experimentally. Here, we report the experimental study on Fermi level pinning of monolayer MoS2 and MoTe2 by interpreting the thermionic emission results. We also quantitatively compared our results with the theoretical simulation results of the monolayer structure as well as the experimental results of the bulk structure. We measured the pinning factor S to be 0.11 and −0.07 for monolayer MoS2 and MoTe2, respectively, suggesting a much stronger Fermi level pinning effect, a Schottky barrier height (SBH) lower than that by theoretical prediction, and interestingly similar pinning energy levels between monolayer and bulk Mo...

562 citations

Journal ArticleDOI
TL;DR: In this article, the diffusion and recombination in an absorber blend of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) with indium tin oxide (ITO) and aluminium contacts have been analyzed in the dark by means of impedance spectroscopy.

547 citations

Journal ArticleDOI
TL;DR: The Schottky barrier height in metal/Ge contacts shows weak dependence on the metal work function indicating strong Fermi-level pinning close to the Bardeen limit.
Abstract: The Schottky barrier height in metal/Ge contacts shows weak dependence on the metal work function indicating strong Fermi-level pinning close to the Bardeen limit. The pinning factor S is about 0.05 and the charge neutrality level (CNL) is only about 0.09eV above the top of the valence band. Because of this, the Fermi level in Ge lies higher than CNL in most cases of interest so that unpassivated acceptorlike gap states at the interface are easily filled, building up a net negative fixed charge. This could prevent efficient inversion of a p-type Ge surface in a metal-oxide-semiconductor structure.

541 citations

Journal ArticleDOI
TL;DR: By utilizing Schottky contact instead of Ohmic contact in device fabrication, the UV sensitivity of the ZnO nanowire nanosensor has been improved by four orders of magnitude, and the reset time has been drastically reduced.
Abstract: UV response of ZnO nanowire nanosensor has been studied under ambient condition. By utilizing Schottky contact instead of Ohmic contact in device fabrication, the UV sensitivity of the nanosensor has been improved by four orders of magnitude, and the reset time has been drastically reduced from 417 to 0.8 s. By further surface functionalization with function polymers, the reset time has been reduced to 20 ms even without correcting the electronic response of the measurement system. These results demonstrate an effective approach for building high response and fast reset UV detectors. © 2009 American Institute of Physics. DOI: 10.1063/1.3133358 Ultraviolet UV photon detectors have a wide range of applications from environmental monitoring, missile launching detection, space research, high temperature flame detection to optical communications. 1 For these applications, fast response time, fast reset time, high selectivity, high responsivity, and good signal-to-noise ratio are commonly desired characteristics. 2 For UV photon detector based on polycrystalline ZnO thin film, a slow response time ranging from a few minutes to several hours is commonly observed. 3,4 Due

540 citations

Journal ArticleDOI
TL;DR: In this paper, the difference in apparent barrier height as obtained from capacitancevoltage and current-voltage measurements on Al/p-InP Schottky barriers was explained by introducing a distribution of barrier heights over the contact area and a temperature dependence of the real barrier height.
Abstract: The difference in apparent barrier height as obtained from capacitance-voltage and current-voltage measurements on Al/p-InP Schottky barriers was explained by introducing a distribution of barrier heights over the contact area and a temperature dependence of the real barrier height. Taking into account this barrier height distribution and the temperature dependence of the barrier height, we were also able to explain the measured values of the effective Richardson constant. As a result a modified expression for the temperature dependence of the current-voltage characteristics was obtained.

521 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023565
2022988
2021672
2020758
2019824
2018847