Topic
Schottky barrier
About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.
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TL;DR: In this article, the Schottky barrier height at the metal-semiconductor interface of a series of metals evaporated onto ''vacuum cleaved'' samples of n−type CdS and n− and p−type GaAs was investigated.
Abstract: Photovoltaic and space‐charge capacitance measurements have been used to study the height of the Schottky barrier at the metal‐semiconductor interface of a series of metals evaporated onto ``vacuum cleaved'' samples of n‐type CdS and n‐ and p‐type GaAs. Although the barrier heights for metal‐CdS samples increase with increasing metal work function as predicted by simple theory, significant deviations were noted. The barrier heights measured on metal‐GaAs samples at different temperatures show very little dependence on the metal and appear to be fixed relative to the valence band edge by surface states. The results are compatible with the model in which the photoresponse, for photon energies less than the semiconductor energy gap, arises principally from photoemission of carriers from the metal into the semiconductor; however, the results are sensitive to the method of surface preparation and comparisons with other work are difficult.
146 citations
TL;DR: By imposing an ultrathin insulator between low-work function metals and silicon, the Schottky barrier of the junction can be substantially reduced, decreasing junction resistance as discussed by the authors, and this approach, low-Schottky-barrier metal source/drain transistors with Mg and Yb as S/D metals are demonstrated.
Abstract: By imposing an ultrathin insulator between low-work function metals and silicon, the Schottky barrier of the junction can be substantially reduced, decreasing junction resistance. With this approach, low-Schottky-barrier metal source/drain (S/D) transistors with Mg and Yb as S/D metals are demonstrated.
146 citations
TL;DR: In this paper, a post-treatment technique via pulsed laser irradiation of CdS (L-CdS) semiconductor was developed to significantly enhance the visible light-driven hydrogen evolution performance from water splitting.
Abstract: Herein, we developed one simple and novel post-treatment technique via pulsed laser irradiation of CdS (L-CdS) semiconductor to significantly enhance the visible light-driven hydrogen evolution performance from water splitting, during which the rate of hydrogen evolution over L-CdS in the first hour is 40-times than that of pure CdS. Because the pulsed laser irradiation induces the in-situ formation of metallic Cd clusters on CdS surface to construct the Schottky junction between Cd clusters and CdS, obviously facilitating the electron transfer from excited CdS into Cd to endow more photogenerated electrons for enhancing the photocatalytic efficiency of H2 evolution. Moreover, the bandgap narrow of post-treated CdS also benefits the stronger light absorption for enhancing the photocatalytic efficiency. This work may provide a new approach to develop heterojunction-based photocatalysts for efficient solar-to-chemical conversion.
146 citations
TL;DR: This work employs density functional theory calculations to show that van der Waals stacking can significantly modulate Schottky barrier heights in the contact formed between multilayer InSe and 2D metals by suppressing the FLP effect.
Abstract: Incorporation of two-dimensional (2D) materials in electronic devices inevitably involves contact with metals, and the nature of this contact (Ohmic and/or Schottky) can dramatically affect the electronic properties of the assembly. Controlling these properties to reliably form low-resistance Ohmic contact remains a great challenge due to the strong Fermi level pinning (FLP) effect at the interface. Herein, we employ density functional theory calculations to show that van der Waals stacking can significantly modulate Schottky barrier heights in the contact formed between multilayer InSe and 2D metals by suppressing the FLP effect. Importantly, the increase of InSe layer number induces a transition from Schottky to Ohmic contact, which is attributed to the decrease of the conduction band minimum and rise of the valence band maximum of InSe. Based on the computed tunneling and Schottky barriers, Cd3C2 is the most compatible electrode for 2D InSe among the materials studied. This work illustrates a straightforward method for developing more effective InSe-based 2D electronic nanodevices.
146 citations
TL;DR: In this article, the fundamental theories of piezotronics and piezo-phototronics, forming their basis for electromechancial devices, sensors and energy sciences, were derived starting from the basic equations for piezoelectricity, semiconductor and photoexcitation, and analytical equations for describing the strain-tuned device current.
146 citations