Schottky barrier

About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.

Tuning of NiSi/Si Schottky barrier heights by sulfur segregation during Ni silicidation

Abstract: The Schottky barrier height (SBH) of NiSi on Si(100) was tuned in a controlled manner by the segregation of sulfur (S) to the silicide∕silicon interface. S was implanted into silicon prior to silicidation. During subsequent Ni silicidation, the segregation of S at the NiSi∕Si interface leads to the change of the SBH. The SBH of NiSi decreased gradually on n-Si(100) from 0.65eV to 0.07eV and increased correspondingly on p-Si(100).

Effects of thin oxide in metal-semiconductor and metal-insulator-semiconductor epi-GaAs Schottky diodes

Abstract: The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of metal–insulator–semiconductor (MIS) GaAs Schottky diodes are investigated and compared with metal–semiconductor (MS) diodes. The MIS diode showed nonideal behavior of I–V characteristics with an ideality factor of 1.17 and a barrier height of 0.97 eV. The energy distribution of interface states density was determined from the forward bias I–V characteristics by taking into account the bias dependence of the effective barrier height, though it is small. The reduction in the saturation current in the MIS case is caused by a thin oxide layer and is due to the combination of increased barrier height and a decrease in the Richardson constant. The carrier concentration anomaly observed between the MIS and MS diodes measured from reverse bias C–V measurements is explained via oxide $(\beta-Ga_2O_3)$ traps due to the Ga-vacancy by deep level transient spectroscopy (DLTS) measurement.

High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3

Abstract: Vertical geometry Ni/Au-β-Ga2O3 Schottky rectifiers were fabricated on Hydride Vapor Phase Epitaxy layers on conducting bulk substrates, and the rectifying forward and reverse current-voltage characteristics were measured at temperatures in the range of 25–100 °C. The reverse breakdown voltage (VBR) of these β-Ga2O3 rectifiers without edge termination was a function of the diode diameter, being in the range of 920–1016 V (average value from 25 diodes was 975 ± 40 V, with 10 of the diodes over 1 kV) for diameters of 105 μm and consistently 810 V (810 ± 3 V for 22 diodes) for a diameter of 210 μm. The Schottky barrier height decreased from 1.1 at 25 °C to 0.94 at 100 °C, while the ideality factor increased from 1.08 to 1.28 over the same range. The figure-of-merit (VBR2/Ron), where Ron is the on-state resistance (∼6.7 mΩ cm2), was approximately 154.07 MW·cm−2 for the 105 μm diameter diodes. The reverse recovery time was 26 ns for switching from +5 V to −5 V. These results represent another impressive advanc...

Minority carrier injection and charge storage in epitaxial Schottky barrier diodes

Abstract: Minority carrier injection by so-called noninjecting metal-semiconductor contacts is considered under conditions of moderate to heavy forward bias. The injection ratio, γ (ratio of minority carrier current to total current), rises linearly with forward current for sufficiently large applied bias. The reason for this rise in γ is that the minority carrier current is enhanced by a drift-field component much larger than the diffusion current which dominates at low bias. In this range the injection ratio is given by γ = n 2 i j bN D 2 j ns where ni and ND are the intrinsic and doping concentrations, b the mobility ratio, jns the Schottky diode saturation current density, and j the diode forward current density. As an example a 5 Ω-cm n-type silicon-gold diode will obtain an injection ratio of 5% at a current density of 350 A/cm2. The minority carrier stored charge per unit area (Q), for Schottky diodes made on thin epitaxial layers, depends upon the characteristics of the epitaxi-substrate interface and can become very significant when this interface is highly reflecting (i.e., has a low value of surface recombination velocity). For large applied bias and negligible bulk recombination the stored charge is given by Q = qn i 2 D p j N D j ns σ where q is the electronic charge, Dp the diffusion constant, and σ the surface recombination velocity. In measurements on experimental epitaxial diodes the interface is not found to be highly reflecting but is characterised by a recombination velocity of about 2000 cm/sec. This value applied to the 5 Ω-cm silicon-gold diode yields a storage time ( Q j ) of about 1 3 nsec. Normalised curves of γ and Q j vs. forward current are presented with parameters chosen in the range expected for silicon epitaxial Schottky barrier diodes. The theory has been verified by experiments on diodes made by evaporating gold contacts on silicon.

Visible-blind GaN Schottky barrier detectors grown on Si(111)

Abstract: We report novel GaN detectors grown by molecular beam epitaxy on Si(111) substrates. Wurtzite structure epitaxial GaN exhibits room-temperature photoluminescence with a band-edge-related emission width as narrow as 7 nm and intensities comparable to high quality layers grown on sapphire by metalorganic chemical vapor deposition. Spectral response of lateral geometry Schottky detectors shows a sharp cutoff at 365 nm with peak responsivities of ∼0.05 A/W at 0 V, and ∼0.1 A/W with a −4 V bias. The dark current is ∼60 nA at −2 V bias. The noise equivalent power is estimated to be 3.7×10−9 W over the response bandwidth of 2.2 MHz.