Schottky barrier

About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.

High-Sensitivity p–n Junction Photodiodes Based on PbS Nanocrystal Quantum Dots

Abstract: Chemically synthesized nanocrystal quantum dots (NQDs) are promising materials for applications in solution-processable optoelectronic devices such as light emitting diodes, photodetectors, and solar cells. Here, we fabricate and study two types of p-n junction photodiodes in which the photoactive p-layer is made from PbS NQDs while the transparent n-layer is fabricated from wide bandgap oxides (ZnO or TiO 2). By using a p-n junction architecture we are able to significantly reduce the dark current compared to earlier Schottky junction devices without reducing external quantum efficiency (EQE), which reaches values of up to ∼80%. The use of this device architecture also allows us to significantly reduce noise and obtain high detectivity (>10 12 cm Hz 1/2 W -1) extending to the near infrared past 1 μm. We observe that the spectral shape of the photoresponse exhibits a significant dependence on applied bias, and specifically, the EQE sharply increases around 500-600 nm at reverse biases greater than 1 V. We attribute this behavior to a "turn-on" of an additional contribution to the photocurrent due to electrons excited to the conduction band from the occupied mid-gap states.

Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy

Abstract: Surface potentials on GaN epilayers and Al0.35Ga0.65N/GaN heterostructures have been studied by scanning Kelvin probe microscopy (SKPM) in conjunction with noncontact atomic force microscopy. The dependence of the surface potential on doping in GaN films, as well as the variation of surface potential with Al0.35Ga0.65N barrier layer thickness has been investigated. The bare surface barrier height (BSBH), as measured by SKPM, is observed to decrease from ∼1. 40±0.1 eV to ∼0.60±0.1 eV with increasing doping in the GaN epilayers. Schottky barrier height calculated from the measurements of BSBH on n-GaN agrees very well with results from previous studies. We have also estimated the surface state density for GaN based on the measured values of BSBH. The semiconductor “work function” at the Al0.35Ga0.65N surface (in heterostructure samples) is observed to decrease by ∼0.60 eV with increase in barrier layer thickness from ∼50 to ∼440 A. A simple model considering the presence of a uniform density of charged acce...

High performance of potassium n-doped carbon nanotube field-effect transistors

Abstract: We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a tunable threshold voltage in the technologically relevant range (−1.3 V⩽Vth⩽0.5 V) and can carry up to 5–6 μA of current in the on-state. We achieve such performance by exposure to potassium (K) vapor and device annealing in high vacuum. The treatment has a twofold effect to: (i) controllably shift Vth toward negative gate biases via bulk doping of the nanotube (up to about 0.6e−/nm), and (ii) increase the on-current by 1–2 orders of magnitude. This current enhancement is achieved by lowering external device resistance due to more intimate contact between K metal and doped nanotube channel in addition to potential reduction of the Schottky barrier height at the contact.

Self-Assembled Monolayers as Interfaces for Organic Opto-electronic Devices

Abstract: Charge injection into an organic semiconductor can be improved by using a self-assembled monolayer of functionalized molecules grafted on the electrode. This new interface can be designed in order to reduce the Schottky barrier between the conductive electrode and the organic semiconductor. The polarizability of the molecules involved can also be chosen in order to increase the adhesion of the molecular semiconductor onto the electrode. We present Kelvin Probe experiments and saturated photovoltage measurements performed on a number of such derivatized electrodes. They permit a quantitative description of the potential shifts due to the self-assembled monolayers which are related to the electrical dipoles of the individual molecules constituting them. When conjugated sites contributing to the band states of the organic semiconductor are placed too close to the electrode in the negative part of the image-force potential, two new effects unfavorable to charge injection can appear. We demonstrate that it is convenient to separate the attachment group of the molecule from the conjugated core by a spacer of non-conjugated sites in order to reduce these undesirable effects.