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Showing papers on "Schottky diode published in 1989"


Journal ArticleDOI
TL;DR: In this article, the quantum-barrier-varactor diode (QBV diode) was proposed for use in multipliers for millimetre waves, where the capacitance/voltage characteristic is symmetric and only odd harmonics are obtained.
Abstract: A new device, the quantum-barrier-varactor diode (QBV diode), is proposed for use in multipliers for millimetre waves. Since the capacitance/voltage characteristic is symmetric, only odd harmonics are obtained. Hence there is no idler circuit to consider for the tripler and only one for the quintupler. It is shown that for triplers and quintuplers, the theoretical efficiency using QBVs is comparable or possibly larger than using Schottky varactor diodes.

164 citations


Journal ArticleDOI
TL;DR: In this article, the Schottky diodes were fabricated on boron-doped diamond epitaxial films using these contacts and investigated their properties, such as the properties of the ohmic and Schottkky properties.
Abstract: Current-voltage characteristics have been obtained for various metal contacts formed on boron-doped diamond epitaxial film prepared on synthesized Ib diamond by the microwave plasma-assisted chemical vapor deposition method. Ti contacts and W contacts have exhibited good ohmic and Schottky properties, respectively. For the first time, we have fabricated Schottky diodes on boron-doped diamond epitaxial films using these contacts and investigated their properties.

137 citations


Journal ArticleDOI
TL;DR: In this article, the authors present guidelines for diode design in the frequency range from 1-10 GHz to 3-3,000 GHz for heterodyne receivers with high sensitivity and high spectral resolution.
Abstract: Recent technological advances have made possible the development of heterodyne receivers with high sensitivity and high spectral resolution for frequencies up to 3,000 GHz (3 THz). These receivers rely on GaAs Schottky barrier mixer diodes to translate the high-frequency signal to a lower frequency where amplification and signal processing are possible. In the frequency range from 1–10 THz several new effects will limit diode performance. These effects are discussed and guidelines for diode design are presented.

78 citations


Journal ArticleDOI
TL;DR: In this paper, Schottky barrier rectifying contacts using e−beamdeposited platinum have been demonstrated on n−type β-SiC and the electrical properties of these contacts were examined as a function of annealing temperature using I−V and C‐V measurements.
Abstract: Schottky barrier rectifying contacts using e‐beam‐deposited platinum have been demonstrated on n‐type β‐SiC. The electrical properties of these contacts were examined as a function of annealing temperature using I‐V and C‐V measurements. Auger analysis was used to study the metallurgical reactions at the Pt/SiC interface. Short annealing cycles in the 350–800 °C temperature range led to formation of a mixed structure of PtSix and PtC at the interface, evidenced by migration of platinum into the SiC above 350 °C. The barrier height was found to increase from 0.95 to 1.35 eV with increasing annealing temperature. The rectifying characteristics improved following an initial 350 °C anneal and remained relatively stable up to 800 °C.

74 citations


Journal ArticleDOI
TL;DR: A barrier height of 1.13±0.03 eV was measured for Al and Au rectifying contacts to p-type chemical-vapordeposited diamond thin films using the internal photoemission technique.
Abstract: A barrier height of 1.13±0.03 eV was measured for Al and Au rectifying contacts to p‐type chemical‐vapor‐deposited diamond thin films using the internal photoemission technique. The results are compared with experimental data reported for Schottky barriers on single‐crystal diamond.

74 citations


Journal ArticleDOI
TL;DR: The results of a study of strong rectification by metal-polymer (Schottky) diodes made by evaporating metal contacts onto films of a soluble semiconducting polymer cast from solution were presented in this article.

67 citations


Journal ArticleDOI
TL;DR: In this article, the design, fabrication, and characterization of superconducting In0.47Ga0.53As junction field effect transistors (JFETs) with Nb source and drain electrodes are described.
Abstract: We describe the design, fabrication, and characterization of superconducting In0.47Ga0.53As junction field‐effect transistors (JFETs) with Nb source and drain electrodes. In0.47Ga0.53As has the advantage of combining large coherence length and high Schottky barrier transmission, making it a very attractive material on which to base superconducting FETs. At large voltages these devices behave as normal FETs in either enhancement or depletion modes, while at small voltages they act as Josephson junctions or super‐Schottky diodes. Both normal and super‐ currents are controlled by the gate.

63 citations


Journal ArticleDOI
TL;DR: In this paper, a silicide/p-Si1-xGex Schottky contact was studied for using in an infrared (IR) image sensor and the results suggest the possibility of a long wavelength (8-12 µm) IR image sensor using a strained layer monolithically grown on a p-Si CCD substrate.
Abstract: Silicide/p-Si1-xGex Schottky contacts were studied for using in an infrared (IR) image sensor. Si1-xGex layers were grown on p-type (100) Si substrates by using molecular beam epitaxy (MBE). Schottky barrier heights of PtSi(Ge) or PdSi(Ge)/p-Si1-xGex contacts decreased as the Ge content increased. When the Si1-xGex layer was strained, the barrier height was smaller than when relaxed for the same value of x. These results suggest the possibility of a long wavelength (8–12 µm) IR image sensor using a silicide/p-Si1-xGex Schottky contact for the strained layer monolithically grown on a p-Si CCD substrate.

60 citations


Proceedings ArticleDOI
26 Jun 1989
TL;DR: A hybrid DMosFET-Schottky (FastFET) device has been developed that exhibits the excellent on-resistance and gate control properties of the DMOSFET along with improved internal diode switching characteristics.
Abstract: A hybrid DMOSFET-Schottky (FastFET) device has been developed that exhibits the excellent on-resistance and gate control properties of the DMOSFET along with improved internal diode switching characteristics. The 45 V and 30 V devices fabricated use an integrated Schottky device that consumes less than 15% of the active area while returning a 35% improvement in reverse recovery performance. The leakage of the FastFET is higher than that of the standard DMOSFET but is still within the tolerances set by most manufacturers' data sheets. Future improvements will include process modification that will reduce this leakage. >

55 citations


Journal ArticleDOI
TL;DR: In this paper, voltage shock-wave formation on a hyperabruptdoped Schottky diode monolithic GaAs nonlinear transmission line was shown to generate 6 V amplitude and 1.6 ps fall time.
Abstract: Voltage waveforms with 6 V amplitude and 1.6 ps fall time were generated by voltage shock‐wave formation on a hyperabrupt‐doped Schottky diode monolithic GaAs nonlinear transmission line.

53 citations


Journal ArticleDOI
TL;DR: In this article, the authors report on electron transport measurements in a planar resonant tunneling field effect transistor (PRESTFET) on a modulation-doped GaAs/AlGaAs heterostructure.
Abstract: We report on electron transport measurements in a planar resonant tunneling field‐effect transistor (PRESTFET) on a modulation‐doped GaAs/AlGaAs heterostructure. The PRESTFET is created by defining two independently biased, 60‐nm‐long Schottky gates separated by 60 nm, on top of the AlGaAs layer, which presents a tunable double‐barrier potential modulation to the electrons traveling from source to drain. Current measurements 4.2 K, as a function of gate bias, with both gates connected, exhibit strong multiple negative transconductance swings at a fixed drain bias below 5 mV, providing evidence of resonant tunneling through quantized states between the two barriers. Fixing the bias on one of the gates and scanning the second, or fixing the bias on both and varying the light intensity of a light‐emitting diode confirms this observation. In addition, a structure in the output conductance as a function of drain voltage at a fixed gate bias is clearly observed.

Proceedings ArticleDOI
13 Mar 1989
TL;DR: In this article, the functionality of efficient synchronous rectifier components, specially developed for resonant DC-DC converter topologies designed to operate at high frequency, has been demonstrated in a series-parallel converter circuit operating at 420 kHz and 85 W.
Abstract: The functionality of efficient synchronous rectifier components, specially developed for resonant DC-DC converter topologies designed to operate at high frequency, has been demonstrated in a series-parallel converter circuit operating at 420 kHz and 85 W Conduction losses for these components are three times lower than for Schottky diodes Switching conditions for efficient operation have been identified both experimentally and using accurate multilevel modeling >

Journal ArticleDOI
TL;DR: In this paper, the authors examined the capture of electrons from the c−Si substrate into a−Si:H defect states, along with the capacitance versus temperature spectra of these diodes, indicating a nearly zero conduction-band offset (50±50 meV) and observed trapping of holes at the valence-band discontinuity ΔEv.
Abstract: Voltage filling pulse measurements taken on a‐Si:H/c‐Si heterostructure Schottky diode samples are used to examine the capture of electrons from the c‐Si substrate into a‐Si:H defect states. These measurements, along with the capacitance versus temperature spectra of these diodes, indicate a nearly zero conduction‐band offset (50±50 meV). In addition, we have observed trapping of holes at the valence‐band discontinuity ΔEv. A clear threshold for the subsequent optical release of these holes yields a value of ΔEv =0.58±0.02 eV. Our measurements also provide the energy and spatial distribution of deep defects within the a‐Si:H layer and indicate a region of anomalously large defect density (1018 cm−3) within roughly 350 A of the a‐Si:H/c‐Si interface.

Journal ArticleDOI
TL;DR: Analyse de l'effet du metal sur l'interface and proposition of differents modeles de formation de barriere de Schottky.
Abstract: La dependance de la hauteur de la barriere de Schottky d'une diode de type Si/siliciure vis a vis de la temperature montre que le niveau de Fermi du metal a l'interface et ancre par rapport a la bande de conduction ou de valence du silicium, selon la nature du siliciure metallique employe. La contribution du semiconducteur aux etats d'interface est restreinte a la bande du semi conducteur la plus proche en energie. Analyse de l'effet du metal sur l'interface et proposition de differents modeles de formation de barriere de Schottky

Proceedings ArticleDOI
A.T. Wu1, T.Y. Chan1, V. Murali1, S.-W. Lee1, J. Nulman1, M. Garner1 
03 Dec 1989
TL;DR: In this paper, the effects of high-temperature ammonia nitridation on the SiO/sub 2/Si system have been studied and the authors explored the possible effects on the underlying silicon.
Abstract: The effects of high-temperature ammonia nitridation on the SiO/sub 2/-Si system have been studied Unlike previous studies which have focused exclusively on the dielectric properties, this work explores the possible effects on the underlying silicon Initial results indicate that nitridation introduces nitrogen into the silicon over a depth of approximately 60 nm Schottky diode and AC surface photovoltage measurements show that the boron-doped nitrogen-rich silicon has n-type characteristics which may be nitrogen-oxygen donor related The device characteristics of n- and p-MOSFETs using reoxidized nitrided oxide (RONO) gate dielectric are studied Compared to oxide devices, off-state drain leakage is suppressed in both n- and p-RONO devices Electron mobility is degraded at low normal field and improved at high normal field, whereas hole mobility degrades at all fields These unusual characteristics can be qualitatively explained in terms of the formation of nitridation-induced surface donor layer >

Journal ArticleDOI
TL;DR: In this paper, the origin of defects at the Au/GaAs(100) Schottky barrier interface was investigated using BEEM and molecular beam epitaxy (MBE) techniques.
Abstract: Ballistic-electron-emission microscopy (BEEM) has been used to investigate the origin of defects at the Au/GaAs(100) Schottky barrier interface. In addition, molecular beam epitaxy (MBE) and in situ fabrication methods have been employed to control Schottky barrier interface properties. BEEM characterization combined with MBE methods has enabled the development of a near-ideal Schottky barrier interface with drastically reduced defect density.

Journal ArticleDOI
TL;DR: The characteristics of Schottky diodes on n-GaAs fabricated after an in situ low-pressure rf H2 plasma treatment have been investigated as a function of the substrate temperature during the plasma treatment.
Abstract: The characteristics of Schottky diodes on n‐GaAs fabricated after an in situ low‐pressure rf H2 plasma treatment have been investigated as a function of the substrate temperature during the plasma treatment. Degraded rectifying characteristics result after room‐temperature treatments, while diodes with ideality factor as low as 1.01 were achieved in the temperature range 160–240 °C. An increase in barrier height was also observed with increasing substrate temperature during plasma treatment. The contact properties are correlated to H diffusion in a surface layer of GaAs, which passivates the dopant atoms and defect sites.

Journal ArticleDOI
TL;DR: In this article, the Schottky diode on pSi was realized and measured contact resistivities were lowest among the known contacts to nSi in the range 1018 −1020 cm−3.
Abstract: Employing structures consisting of Pt, Si, and Er layers on Si, contacts to nSi with resistivities as low as 37×10−8 Ω cm2 were obtained and a low‐leakage high‐breakdown voltage Schottky diode on pSi was realized Measured contact resistivities are lowest among the known contacts to nSi Extended transmission line method measurements were made to determine contact resistivities for contacts to n‐type silicon doped in the range 1018 –1020 cm−3 The data are consistent with a barrier height of ∼037 eV The metallurgy of the contacts was studied using transmission electron microscopy

Proceedings ArticleDOI
13 Jun 1989
TL;DR: In this article, the regenerative divide using a zero-memory double-balanced Schottky diode mixer was analyzed in terms of modified Bessel functions and closed-form solutions predicted the threshold of turn on, the steady-state input-output amplitude relationship, and the operational bandwidth.
Abstract: Regenerative frequency halvers using double-balanced mixers are analyzed in terms of modified Bessel functions. Particular attention is given to a regenerative divide using a zero-memory double-balanced Schottky diode mixer. Closed-form solutions predict the threshold of turn on, the steady-state input-output amplitude relationship, and the operational bandwidth. Experimental results are also presented. >

Patent
20 Mar 1989
TL;DR: An improved means and method for forming a Schottky diode integrated with transistors and other devices which is particularly useful where both control circuits and a large power device are on the same chip is described in this article.
Abstract: An improved means and method is described for forming a Schottky diode integrated with transistors and other devices which is particularly useful where both control circuits and a large power device are on the same chip. Nested N- (6), P- (8), N- (14) and P+ (26-30) regions are formed on an N+ semiconductor substrate (5). A portion (45H) of the overlying dielectric (45) is removed adjacent one of the P+ regions (28, 29) over the N- region (14) and a Schottky contact (54C) formed to the N- region (14) and an ohmic contact to the adjacent P+ region (28-29). N+ (34, 36) and P+ (26, 30) regions are desirably provided where the junctions between the N-(14) /P-(8) regions and the P-(8) /N-(6) regions intersect the surface to provide contact to the N-(14) and P- (8) regions respectively. A P region (41) extends through the upper N- region (14) and has U-shaped arms (76) which partially overlie an annular shaped P+ region (28-29) and is located between the active region of the PNP transistor (27, 14, 8) and the collector contact (54A, 54E) to serve as a Kelvin probe. The arrangement is particularly valuable where a vertical PNP device (27, 14, 8) without a buried collector region is required.

Patent
John Sitch1
13 Jul 1989
TL;DR: In this paper, the Schottky barrier diode was used to protect a gallium arsenide integrated circuit (GaAs IC) from electrostatic discharge voltages at the terminal by a protection circuit which includes a bidirectionally conductive transistor as a discharge current shunting device.
Abstract: A terminal of an integrated circuit is protected from electrostatic discharge voltages at the terminal by a protection circuit which includes a bidirectionally conductive transistor as a discharge current shunting device. A bidirectionally conductive controlled path is provided between the terminal and one of two voltage supply terminals. The transistor has a biassing resistor connected between the terminal and its control electrode. A normally reverse biassed diode is connected between the control electrode on another of the voltage supply terminals. For an n-channel FET or an npn bipolar transistor, when a positive electrostatic discharge is applied to the terminal, a current flowing through the biassing resistor turns on the transistor to provide a discharge path from the terminal to the voltage supply terminal. When a negative electrostatic discharge is applied to the terminal, the diode is forward biassed and a resulting current flow through the biassing resistor turns on the transistor to provide a discharge path from the voltage supply terminal to the terminal. The transistor may be either a symmetrical bipolar transistor or an enhancement mode FET. An embodiment of the circuit for protecting a gallium arsenide integrated circuit (GaAs IC) uses an enhancement mode MESFET and a Schottky barrier diode. For a p-channel FET or a pnp bipolar transistor the polarity of the discharge is reversed.

Proceedings ArticleDOI
18 Sep 1989
TL;DR: A single polysilicon-layer advanced super-high-speed (HS4+) BiCMOS technology which offers 1- mu m NMOS and PMOS devices, 13-GHz bipolar npn transistors, lateral pnps, Schottky diodes, poly-silicon resistors, lateral fuses, and three layers of Al/Cu interconnect is presented in this paper.
Abstract: A single-polysilicon-layer advanced super-high-speed (HS4+) BiCMOS technology which offers 1- mu m NMOS and PMOS devices, 13-GHz bipolar npn transistors, lateral pnps, Schottky diodes, polysilicon resistors, lateral fuses, and three layers of Al/Cu interconnect is presented. The key processing steps and the resulting device characteristics are examined with an emphasis on the manufacturability of this technology. The bipolar transistor and CMOS device reliability is discussed. >

Journal ArticleDOI
M. Jestl1, I Maran1, A. Köck1, W. Beinstingl1, Erich Gornik1 
TL;DR: A polarization detector based on the excitation of surface plasmon polaritons on the periodically corrugated metal surface of Schottky structures is presented and by use of two detectors with different grating orientations the polarization of the light can be determined unambiguously.
Abstract: A polarization detector based on the excitation of surface plasmon polaritons on the periodically corrugated metal surface of Schottky structures is presented. The surface modes are only excited by light having the appropriate polarization; they are leaky at the metal-semiconductor interface and are thus radiated into the semiconductor, where they generate charge carriers. By this mechanism the photocurrent of the device is enhanced and depends strongly on the polarization angle of the incident light. By use of two detectors with different grating orientations the polarization of the light can be determined unambiguously.

Patent
14 Dec 1989
TL;DR: In this article, a Schottky diode having a platinum silicide anode layer formed in electrical contact with an underlying silicon semiconductor layer is described, and a sidewall oxide is formed around the periphery of the platinum area to prevent etching processes from exposing a portion of the underlying silicon layer.
Abstract: Disclosed is a Schottky diode having a platinum silicide Schottky anode layer (25) formed in electrical contact with an underlying silicon semiconductor layer (14). A sidewall oxide (36) is formed around the periphery of the platinum silicide area (25) to prevent etching processes from exposing a portion of the underlying silicon semiconductor layer (14). A titanium tungsten diffusion barrier layer (26) and an aluminum composition layer (28) are formed thereover to provide electrical contact to the Schottky diode.

Journal ArticleDOI
TL;DR: In this paper, a thin film of α-sexithienyl (α-6T) was synthesized and deposited as thin films onto platinized glass slides by the technique of vacuum evaporation.

Journal ArticleDOI
TL;DR: In this article, the fabrication and initial laboratory test of 128x128-element focal plane arrays integrating IrSi detectors with a cutoff wavelength of approximately 9.4 μm and surface-channel CCD readout circuitry are presented.
Abstract: The fabrication and initial laboratory test of 128x128-element focal plane arrays integrating IrSi detectors with a cutoff wavelength of approximately 9.4 μm and surface-channel CCD readout circuitry are presented. This extends thermal imaging with silicide Schottky-barrier detector arrays into the long-wavelength infrared (LWIR) spectral band (8 to 14 μm) for the first time. High-quality imagery with a minimum resolvable temperature of approximately 0.3 K is obtained.

Journal ArticleDOI
TL;DR: In this article, soft x-ray photoemission studies of metal/molecular-beam epitaxy (MBE)•GaAs(100) interfaces formed at low temperature indicate that rectifying barrier heights are proportional to the metal work function in accordance with Schottky's original description of metal-semiconductor contacts.
Abstract: We report soft x‐ray photoemission studies of metal/molecular‐beam epitaxy (MBE)‐GaAs(100) interfaces formed at low temperature. Our results indicate that rectifying barrier heights are proportional to the metal work function in accordance with Schottky’s original description of metal–semiconductor contacts. These results confirm the predictions of a self‐consistent model of metal–semiconductor interfaces, and suggest that metal‐induced gap states and native defect mechanisms are not major factors in determining the Fermi level energy at ‘‘ideal’’ interfaces. We attribute deviations from the ideal Schottky limit behavior observed for interfaces formed at room temperature to metallization‐induced atomic relaxations (rather than electronic relaxations) occurring at metal–semiconductor contacts. We present a useful methodology for analyzing electronic properties at metal–semiconductor interfaces. The pronounced differences in barrier height formation between MBE vs melt‐grown GaAs can evidence the role of de...

Patent
09 Jun 1989
TL;DR: Laterally stacked Schottky diodes for IR sensor applications are fabricated utilizing porous silicon having pores as discussed by the authors, which is ideal for IR focal plane array applications due to uniformity and reproducibility.
Abstract: Laterally stacked Schottky diodes (25) for infrared sensor applications are fabricated utilizing porous silicon (10) having pores (12). A Schottky metal contact (24) is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.

Journal ArticleDOI
TL;DR: In this paper, a quantum-well QW diode frequency tripler with greater than 1.2% efficiency and 0.8 mW output power at about 250 GHz has been developed.
Abstract: A quantum-well QW diode frequency tripler with greater than 1.2% efficiency and 0.8 mW output power at about 250 GHz has been developed. A comparison between the experimental results and the theoretically calculated efficiency for a tripler using such a diode is made.

Journal ArticleDOI
TL;DR: In this article, a high electron mobility transistor has been fabricated on an InP substrate by molecular beam epitaxy using a high-gap GaInP material, and a transconductance of 300 mS/mm has been measured on a device of 1.3 μm gate length.
Abstract: GaInP material has been used as a high‐gap semiconductor on InP to fabricate Schottky diodes. The experimental results show that the devices exhibit good electrical properties when the ternary strained layer is below the critical thickness. The best device is obtained with a gallium composition of 100% and a GaP thickness of 11 A, and exhibits a barrier height of 0.8 eV, an ideality factor of 1.1, and a reverse current of 0.1 nA at −1 V. A high electron mobility transistor has been fabricated on an InP substrate by molecular beam epitaxy using a high‐gap GaInP material, and a transconductance of 300 mS/mm has been measured on a device of 1.3 μm gate length.