Showing papers on "Schottky diode published in 2005"
TL;DR: Short channel ( approximately 80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-kappa gate dielectrics (ALD HfO(2)) are obtained and demonstrate the potential of SWNTs for future complementary electronics.
Abstract: Short channel (80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-K gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter 1.6 nm and band gap 0.55 eV, we obtain n-MOSFET-like devices exhibiting high on-currents due to chemically suppressed Schottky barriers at the contacts, subthreshold swing of 70 mV/decade, negligible ambipolar conduction, and high on/off ratios up to 106 at a bias voltage of 0.5 V. The results compare favorably with the state-of-the-art silicon n-MOSFETs and demonstrate the potential of SWNTs for future complementary electronics. The effects of doping level on the electrical characteristics of the nanotube devices are discussed. Single-walled carbon nanotubes (SWNTs) are promising for future high performance electronics such as field effect transistors (FETs) owing to their various unique properties including ballistic transport with relatively long mean free paths and high compatibility with high- dielectrics imparted by their unique chemical bonding and surface stability. 1-12 While much has been done to achieve high performance p-type nanotube FETs through contact optimization, dielectric integration and lateral scaling, progress on n-FETs has been slow partly due to the difficulty in affording low Schottky (SB) contacts for high on-states and at the same time achieving high on/off ratios with small diameter (or large band gap) tubes. 7 Here, by invoking chemical doping, high- dielectrics, and new device design, we demonstrate n-type SWNT FETs with performance matching or approaching the best p-type nanotube FETs and surpassing the state-of-the-art Si n-MOSFET.
509 citations
TL;DR: In this article, a combination of a Gunn diode emitter, a Schottky diode detector, and a polyethylene Fresnel lens was used for line-scan images at 0.2m∕s with a data acquisition rate of 512 points∕ s.
Abstract: We report the use of a compact continuous-wave sub-terahertz system for inspection applications, using electronic generation and detection methods. A combination of a Gunn diode emitter, a Schottky diode detector, and a polyethylene Fresnel lens provides line-scan images at 0.2m∕s with a data acquisition rate of 512points∕s. Examples of the measurement of NASA’s insulating panels and applicability of the technology to other nondestructive testing applications are presented and discussed.
307 citations
TL;DR: In this article, a model for metal-ferroelectric-metal heterostructures with Schottky contacts is proposed, which adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal ferroelectric contact by introducing a sheet of surface charge located at a finite distance from the electrode interface.
Abstract: A model for metal-ferroelectric-metal heterostructures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal-ferroelectric contact by introducing the ferroelectric polarization as a sheet of surface charge located at a finite distance from the electrode interface, a deep trapping level of high concentration, and the static and dynamic values of the dielectric constant. Consequences of the proposed model on relevant quantities of the Schottky contact such as builtin voltage, charge density, and depletion width, as well as on the interpretation of the current-voltage and capacitance-voltage characteristics are discussed in detail.
266 citations
TL;DR: In this article, the authors demonstrate the efficacy of diblock copolymer self assembly for solving key fabrication challenges of aggressively scaled silicon field effect transistors, demonstrating that these materials spontaneously form nanometer-scale patterns that self-align to larger-scale lithography, enabling construction of sub-lithographic semiconducting transistor channels composed of arrays of parallel nanowires with critical dimensions defined by self assembly.
Abstract: We demonstrate the efficacy of diblock copolymer self assembly for solving key fabrication challenges of aggressively scaled silicon field effect transistors. These materials spontaneously form nanometer-scale patterns that self-align to larger-scale lithography, enabling construction of sub-lithographic semiconducting transistor channels composed of arrays of parallel nanowires with critical dimensions (15 nm width, 40 nm pitch) defined by self assembly. The number of nanowires in the arrays is readily adjusted, greatly reducing the complexity associated with width-scaling of nanowire transistors. We measured Schottky source/drain multi-nanowire n-channel devices comprised of 6, 8, 10, and 16 nanowires, with current drives of ∼5μA∕wire and current on/off ratios of ∼105.
235 citations
TL;DR: Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodES, in the range of 10(-13) W/ radical Hz.
Abstract: We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than 15 V. To decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes, in the range of 10-13 W(square root)xHz.
207 citations
TL;DR: Logic devices, including OR, AND, NOT, and NOR gates, based on single-crystalline ZnO nanorods are demonstrated, ensuring fabrication of high-performance Schottky diodes and metal-semiconductor field-effect transistors.
Abstract: Logic devices, including OR, AND, NOT, and NOR gates, based on single-crystalline ZnO nanorods are demonstrated. In these devices, ZnO nanorods are employed as semiconducting channels. They control metal/oxide semiconductor junction characteristics, to yield either good ohmic or Schottky contacts, ensuring fabrication of high-performance Schottky diodes and metal-semiconductor field-effect transistors.
203 citations
TL;DR: In this paper, the authors demonstrate the fabrication and operation of a carbon nanotube (CNT) based Schottky diode using a Pd contact (high-work-function metal) and an Al contact (low-work function metal) at the two ends of a single-wall CNT.
Abstract: We demonstrate the fabrication and operation of a carbon nanotube (CNT) based Schottky diode by using a Pd contact (high-work-function metal) and an Al contact (low-work-function metal) at the two ends of a single-wall CNT. We show that it is possible to tune the rectification current-voltage (I-V) characteristics of the CNT through the use of a back gate. In contrast to standard back gate field-effect transistors (FET) using same-metal source drain contacts, the asymmetrically contacted CNT operates as a directionally dependent CNT FET when gated. While measuring at source-drain reverse bias, the device displays semiconducting characteristics whereas at forward bias, the device is nonsemiconducting.
180 citations
TL;DR: In this paper, the potential use of ZnO-based photonic and electronic devices has been demonstrated by the fabrication of prototype ultraviolet (UV) photodetector and field effect transistor (FET) devices that contain films of p-type zinc oxide with arsenic as the p type dopant.
Abstract: The potential use of ZnO-based photonic and electronic devices has been demonstrated by the fabrication of prototype ultraviolet (UV) photodetector and field-effect transistor (FET) devices that contain films of p-type ZnO with arsenic as the p-type dopant. These p-type films have high crystalline quality and show long-term stability. The ZnO UV photodetectors are based on p-n junctions. The FETs are made with metal-semiconductor Schottky contacts on p-type ZnO and are normally off (enhancement) devices. The spectral and electrical characteristics of these devices are presented and explained.
163 citations
TL;DR: In this article, the formation of good Pt Schottky contacts on the Zn-terminated n-type ZnO (0001) surfaces (∼2×1017cm−3) using surface treatment with a hydrogen peroxide solution was reported.
Abstract: We report on the formation of good Pt Schottky contacts on the Zn-terminated n-type ZnO (0001) surfaces (∼2×1017cm−3) using surface treatment with a hydrogen peroxide solution. The Pt contacts on organic solvent-cleaned ZnO (0001) show leaky behavior with a high leakage current of ∼−0.05A under −5V reverse bias voltage, whereas the hydrogen peroxide-treated contacts show Schottky behavior with very low leakage current of ∼−6.5×10−8A under −5V reverse bias voltage. Schottky barrier heights estimated from current-voltage and capacitance-voltage characteristics are 0.89 and 0.93eV, respectively. Room-temperature photoluminescence results show that the hydrogen peroxide treatment is fairly effective in removing deep-level defects near the ZnO surface region. In addition, the preliminary deep-level transient spectroscopy result is also presented.
150 citations
TL;DR: In this paper, the Schottky barrier diodes were fabricated without a guard ring in a 130nm foundry CMOS process and achieved cutoff frequencies of 16/spl times/0.32/spl µ/m/sup 2/2.
Abstract: CoSi/sub 2/-Si Schottky barrier diodes on an n-well and on a p-well/substrate are fabricated without a guard ring in a 130-nm foundry CMOS process. The nand p-type diodes with an area of 16/spl times/0.32/spl times/0.32 /spl mu/m/sup 2/ achieve cutoff frequencies of /spl sim/1.5 and /spl sim/1.2 THz at 0-V bias, respectively. These are the highest cutoff frequencies for Schottky diodes fabricated in foundry silicon processes. The leakage currents at 1.0-V reverse bias vary between 0.4 to 10 nA for the n-type diodes. The break down voltage for these diodes is around 15 V. It should be possible to use these in millimeter wave and far infrared detection.
148 citations
TL;DR: In this paper, a modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and currentvoltage characteristics of metalferroelectric-metal structures.
Abstract: A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface charge situated at a fixed distance from the interface. The presumable high concentration of structural defects acting as active electric traps is taken into account by introducing a deep acceptorlike level. The model is applied on a set of metal-Pb(Zr,Ti)O3-metal samples with different Zr∕Ti ratios, deposited by different methods, and having different thicknesses, electrode materials, and electrode areas. Values around 1018cm−3 were estimated for the hole concentration from capacitance-voltage measurements. The space-charge density near the electrode, estimated from current-voltage measurements, is in the 1020–1021cm−3 range. The total thickness of the interface layer ranges from 3to35nm, depending on the Zr∕Ti ratio, on the shape of the hysteresis loop, and on the elec...
TL;DR: The Schottky barrier height (SBH) of NiSi on Si(100) was tuned in a controlled manner by the segregation of sulfur (S) to the silicide∕silicon interface as discussed by the authors.
Abstract: The Schottky barrier height (SBH) of NiSi on Si(100) was tuned in a controlled manner by the segregation of sulfur (S) to the silicide∕silicon interface. S was implanted into silicon prior to silicidation. During subsequent Ni silicidation, the segregation of S at the NiSi∕Si interface leads to the change of the SBH. The SBH of NiSi decreased gradually on n-Si(100) from 0.65eV to 0.07eV and increased correspondingly on p-Si(100).
TL;DR: In this paper, the authors used thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc), to reduce the effective barrier height by influencing the space charge region of the GaAs.
Abstract: Control of the interfacial potential barrier for metal∕n‐GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The current–voltage (I–V) characteristics for organic-modified Ag∕S:GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, n<1.3). Unlike other organic interlayers in similar device structures, SnPc reduces the effective barrier height by influencing the space charge region of the GaAs. The change in barrier height deduced from the I–V characteristics [(0.26±0.02)V] is similar to the band-bending measured using core-level photoelectron spectroscopy for SnPc growth on the S-passivated n‐GaAs(001) surface [(0.22±0.04)eV] and is much larger than previously reported for other similar systems.
TL;DR: In this article, the impact of stacking faults on the performance of 4H-SiC (0001) Schottky barrier diodes has been investigated, and it is revealed that the stacking faults cause the lowering of Schottkey barrier height as well as the decrease of breakdown voltage.
Abstract: The density, shape and structure of in-grown stacking faults in 4H–SiC (0001) epitaxial layers have been characterized by cathodeluminescence, photoluminescence and high-resolution transmission electron microscopy. These analyses indicate that in-grown stacking faults are of 8H structure, and are generated mostly near the epilayer/substrate interface during chemical vapor deposition. The impact of the stacking faults on the performance of 4H–SiC (0001) Schottky barrier diodes has been investigated. It is revealed that the stacking faults cause the lowering of Schottky barrier height as well as the decrease of breakdown voltage.
TL;DR: In this article, a high-speed resonant cavity enhanced germanium (Ge) Schottky photodetectors on a silicon-on-insulator substrate were designed and fabricated.
Abstract: We have designed and fabricated high-speed resonant cavity enhanced germanium (Ge) Schottky photodetectors on a silicon-on-insulator substrate. These back-illuminated detectors have demonstrated 3-dB bandwidths of more than 12 GHz at 3-V reverse bias and a peak quantum efficiency of 59% (R=0.73 A/W) at the resonant wavelength of /spl sim/1540 nm. Time domain measurements of our Ge photodetectors with diameters of up to 48 /spl mu/m show transit-time limited impulse responses corresponding to bandwidths of at least 6.7 GHz, making these detectors compatible with 10-Gb/s data communication systems.
TL;DR: In this paper, the authors present the design and fabrication of a low-noise fixed-tuned 300-360 GHz sub-harmonic mixer, featuring an anti-parallel pair of planar Schottky diodes fabricated by the University of Virginia and flipchipped onto a suspended quartz-based microstrip circuit.
Abstract: This letter presents the design and fabrication of a low-noise fixed-tuned 300-360-GHz sub-harmonic mixer, featuring an anti-parallel pair of planar Schottky diodes fabricated by the University of Virginia and flip-chipped onto a suspended quartz-based microstrip circuit. The mixer exhibits a double side band (DSB) equivalent noise temperature lower than 900K over 18% of bandwidth (300-360-GHz), with 2 to 4.5mW of local oscillator (LO) power. At room temperature, a minimum DSB mixer noise temperature of 700K and conversion losses of 6.3dB are measured at 330GHz.
TL;DR: In this article, a theoretical/empirical analysis coupled with 2D-numerical simulation of diamond power devices incorporating boron as dopant is discussed using the results of a theoretical analysis coupled to 2D numerical simulation.
TL;DR: In this article, two approaches of Gaussian distribution of barrier heights in inhomogeneous Schottky diodes have been analyzed by comparing the results for consistency between the two approaches.
14 Jun 2005
TL;DR: In this article, a Schottky-source/drain MOSFET (SBT) with dopant-segregation (DS) source and drain was proposed.
Abstract: High-performance operation was achieved in a novel Schottky-source/drain MOSFET (SBT: Schottky barrier transistor), which has dopant-segregation (DS) Schottky source/drain. Sub-100 nm complementary DS-SBTs were fabricated using the CoSi/sub 2/ process, which was fully compatible with the current CMOS technology. Excellent CMOS performance was obtained without any channel-mobility degradation, and CMOS ring oscillator was successfully demonstrated. In addition, >20 % improvement in drive current over the conventional n-MOSFETs was confirmed in the n-type DS-SBTs around the gate length of 50 nm.
TL;DR: The results suggest that Si--C linked monolayers on flat silicon may be a viable material for future electronic devices.
Abstract: Herein, the influence of silicon surface modification via SiCnH2n+1(n=10,12,16,22) monolayer-based devices on p-type 〈100〉 and n-type 〈100〉 silicon is studied by forming MIS (metal–insulator–semiconductor) diodes using a mercury probe. From current density–voltage (J–V) and capacitance–voltage (C–V) measurements, the relevant parameters describing the electrical behavior of these diodes are derived, such as the diode ideality factor, the effective barrier height, the flatband voltage, the barrier height, the monolayer dielectric constant, the tunneling attenuation factor, and the fixed charge density (Nf). It is shown that the J–V behavior of our MIS structures could be precisely tuned via the monolayer thickness. The use of n-type silicon resulted in lower diode ideality factors as compared to p-type silicon. A similar flatband voltage, independent of monolayer thickness, was found, indicating similar properties for all silicon–monolayer interfaces. An exception was the C10-based monolayer device on p-type silicon. Furthermore, low values of Nfwere found for monolayers on p-type silicon (≈6×1011cm−2). These results suggest that SiC linked monolayers on flat silicon may be a viable material for future electronic devices.
Patent•
07 Dec 2005TL;DR: In this article, a back-to-back Schottky diode, a resistance memory device using the MSM diode and associated fabrication processes are provided, which includes: providing a substrate, forming a metal bottom electrode overlying the substrate, having a first work function; forming a semiconductor layer overlying this bottom electrode having a second work function.
Abstract: A metal/semiconductor/metal (MSM) back-to-back Schottky diode, a resistance memory device using the MSM diode, and associated fabrication processes are provided. The method includes: providing a substrate; forming a metal bottom electrode overlying the substrate, having a first work function; forming a semiconductor layer overlying the metal bottom electrode, having a second work function, less than the first work function; and, forming a metal top electrode overlying the semiconductor layer, having a third work function, greater than the second work function. The metal top and bottom electrodes can be materials such as Pt, Au, Ag, TiN, Ta, Ru, or TaN. In one aspect, the metal top electrode and metal bottom electrode are made from the same material and, therefore, have identical work functions. The semiconductor layer can be a material such as amorphous silicon (a:Si), polycrystalline Si, InOx, or ZnO.
TL;DR: In this article, the authors have performed behavior of the non-ideal forward bias currentvoltage (I-V) and the reverse bias capacitance voltage (C−V) characteristics of Zn/p-Si (metal-semiconductor) Schottky barrier diode (SBDs) with thin interfacial insulator layer.
Abstract: In this study, we have performed behavior of the non-ideal forward bias current–voltage (I–V) and the reverse bias capacitance–voltage (C–V) characteristics of Zn/p-Si (metal–semiconductor) Schottky barrier diode (SBDs) with thin interfacial insulator layer. The forward bias I–V and reverse bias C–V characteristics of SBDs have been studied at the temperatures range of 300–400 K. SBD parameters such as ideality factor n, the series resistance (RS) determined Cheung's functions and Schottky barrier height, Φ b , are investigated as functions of temperature. The ideality factor n and RS were strongly temperature dependent and changed linearly with temperature and inverse temperature, respectively. The zero-bias barrier heights Φ b 0 ( I – V ) calculated from I–V measurements show an unusual behavior that it was found to increase linearly with the increasing temperature. However, the barrier height Φ b ( C – V ) calculated from C–V measurements at 500 kHz frequency decreased linearly with the increasing temperature. The correlation between Φ b 0 ( I – V ) and Φ b ( C – V ) barrier heights have been explained by taking into account ideality factors n and the tunneling factor ( α χ 1 / 2 δ ) in the current transport mechanism. Also, the temperature dependence of energy distribution of interface state density ( N SS ) was determined from the forward I–V measurements by taking into account the bias dependence of the effective barrier height. The higher values of n and RS were attributed to the presence of a native insulator on Si surface and to high density of interface states localized at semiconductor–native oxide layer (Si/SiO2) interface.
TL;DR: In this article, the Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D.
Abstract: Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as /spl sim/5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si.
TL;DR: In this article, a thermally stable, deep-ultraviolet (DUV) photodiode using tungsten carbide (WC) Schottky and Ti/WC ohmic contacts for a boron-doped homoepitaxial p-diamond epilayer was developed.
Abstract: We have developed a thermally stable, deep-ultraviolet (DUV) photodiode using tungsten carbide (WC) Schottky and Ti/WC ohmic contacts for a boron-doped homoepitaxial p-diamond epilayer. Effects of thermal annealing in an argon ambient on the electrical and photoresponse properties were investigated. Annealing at temperatures up to 550°C improves the rectifying current-voltage characteristics, resulting in a dramatic enhancement of DUV responsivity at 220nm by a factor of 4×103. A blind ratio as large as 105 between DUV and visible light has been achieved at a reverse bias as small as 1V. Development of the thermally stable WC-based Schottky and ohmic contacts provides a route for stable operation of a diamond photodetector at high temperatures.
Patent•
21 Jan 2005TL;DR: In this article, a recessed electrode is provided to produce a rectifier with nominally off characteristics, which can be formed in a number of geometries in conjunction with current carrying electrodes of the device.
Abstract: A III-nitride device includes a recessed electrode to produce a nominally off, or an enhancement mode, device. By providing a recessed electrode, a conduction channel formed at the interface of two III-nitride materials is interrupted when the electrode contact is inactive to prevent current flow in the device. The electrode can be a schottky contact or an insulated metal contact. Two ohmic contacts can be provided to form a rectifier device with nominally off characteristics. The recesses formed with the electrode can have sloped sides. The electrode can be formed in a number of geometries in conjunction with current carrying electrodes of the device. A nominally on device, or pinch resistor, is formed when the electrode is not recessed. A diode is also formed by providing non-recessed ohmic and schottky contacts through an insulator to an AlGaN layer.
TL;DR: In this paper, Schottky diodes and metal-semiconductor-metal (MSM) photodetectors with ruthenium (Ru) electrodes were also fabricated.
TL;DR: In this article, a Pd-InP Schottky diode hydrogen sensor fabricated by electrophoretic deposition (EPD) combined with nanosized Pd particles is first proposed and demonstrated.
Abstract: In this letter, a new Pd-InP Schottky diode hydrogen sensor fabricated by electrophoretic deposition (EPD) combined with nanosized Pd particles is first proposed and demonstrated. Experimentally, the studied device exhibited excellent current-voltage rectifying characteristics with a large Schottky barrier height (SBH) of 829 meV. At 303 K, a high saturation sensitivity ratio of 38 was found under a very low hydrogen concentration of 15 ppm H/sub 2//air. As raising the hydrogen concentration to 1.0% H/sub 2//air, the SBH lowering of the studied devic"dq"e reached to 307 meV and the sensitivity ratio was high as 1.29/spl times/10/sup 5/ with a very rapid response, which far prevailed over those fabricated by the conventional thermal evaporation and electroless plating techniques. Consequentially, the EPD Pd-InP Schottky diode with extremely effective Pd gate is promising for the fabrication of high-performance hydrogen sensors.
TL;DR: In this article, Schottky diodes on AlGaN/GaN heterostructures with Pt, IrPt, and PdAg catalytic metals are fabricated and characterized from 200°C to 800°C for H 2 sensing.
Abstract: Schottky diodes on AlGaN/GaN heterostructures with Pt, IrPt, and PdAg catalytic metals are fabricated and characterized from 200 °C to 800 °C for H 2 sensing. Over this large range of temperature, the forward current of all the diodes increases with exposure to H 2 gas, which is attributed to Schottky barrier height reduction caused by the atomic hydrogen absorption on the metal–oxide interface. The results indicate that AlGaN/GaN heterostructure Schottky diodes are capable of high-temperature H 2 sensor operation up to 800 °C. As temperature increases, the hydrogen detection sensitivity of Pt and IrPt diodes improves due to the more effective H 2 dissociation. However, the sensitivity of PdAg diodes degrades with the increase of temperature due to thermal instability of PdAg. At a range of temperature from 200 °C to 300 °C, PdAg diodes exhibit significant higher sensitivity compared with Pt and IrPt diodes. IrPt and Pt diodes show higher sensitivity at temperatures above 400 °C.
TL;DR: In this article, the currentvoltage characteristics of Au/n-GaAs Schottky barrier diodes (SBD) were determined in the temperature range 80-400 K.
Abstract: The current–voltage (I–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBD) were determined in the temperature range 80–400 K. SBD parameters such as ideality factor n, series resistance RS and barrier height Φb were extracted from I–V curves using Cheung's method. The barrier height for current transport decreases and the ideality factor increases with the decrease temperatures. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. So that barrier height ΦI–V have been corrected by taking into account quality factors (n) and the electron tunneling factor (αχ1/2δ) in the expression of saturation current (I0) of the Au/n-GaAs Schottky diodes. Thus, a modified ln ( I 0 / T 2 ) − q 2 σ 0 2 / 2 k 2 T 2 versus 1/T gives Φ ¯ b0 ( T = 0 ) and A* as 0.73 eV and 11.08 A/(cm2 K2), respectively, without using the temperature coefficient of the barrier heights. Therefore, it has been concluded that the temperature dependent I–V characteristics of the device can be successfully explained with Gaussian distribution of the BHs.