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Schottky effect
About: Schottky effect is a research topic. Over the lifetime, 1336 publications have been published within this topic receiving 31233 citations.
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TL;DR: In this article, the authors derived voltage-current characteristics for field and T-F emission in the forward and reverse regime of Schottky barriers formed on highly doped semiconductors.
Abstract: Field emission and thermionic-field (T-F) emission are considered as the phenomena responsible for the excess currents observed both in the forward and reverse directions of Schottky barriers formed on highly doped semiconductors. Voltage-current characteristics are derived for field and thermionic-field emission in the forward and reverse regime. The temperatures and voltages where these phenomena are predominent for a given diode are discussed. Comparison with experimental results on GaAs and Si diodes shows good agreement between theory and experiments.
1,268 citations
TL;DR: In this paper, the Schottky effect was shown to be consistent with the Poole-Frenkel effect for SiO films, which is a simple model in which the vacuum-deposited insulator is proposed to contain neutral traps and donor centers.
Abstract: Existing experimental data on the bulk conductivity of ${\mathrm{Ta}}_{2}$${\mathrm{O}}_{5}$ and SiO films are shown to be consistent with the Schottky effect rather than the Poole-Frenkel effect. A discussion of the physical properties of vacuum-deposited insulators has led to a simple model in which the insulator is proposed to contain neutral traps and donor centers. This model is shown to resolve the above-mentioned "anomalous" Poole-Frenkel effect. Other simple models are discussed, but they do not exhibit the anomalous Poole-Frenkel effect.
703 citations
TL;DR: In this paper, the authors studied both the electron and hole conduction of nanotube transistors and found that the sensing mechanisms can be unambiguously identified from extensive protein-adsorption experiments on such devices.
Abstract: Carbon nanotube transistors have outstanding potential for electronic detection of biomolecules in solution The physical mechanism underlying sensing however remains controversial, which hampers full exploitation of these promising nanosensors Previously suggested mechanisms are electrostatic gating, changes in gate coupling, carrier mobility changes, and Schottky barrier effects We argue that each mechanism has its characteristic effect on the liquid gate potential dependence of the device conductance By studying both the electron and hole conduction, the sensing mechanisms can be unambiguously identified From extensive protein-adsorption experiments on such devices, we find that electrostatic gating and Schottky barrier effects are the two relevant mechanisms, with electrostatic gating being most reproducible If the contact region is passivated, sensing is shown to be dominated by electrostatic gating, which demonstrates that the sensitive part of a nanotube transistor is not limited to the contact region, as previously suggested Such a layout provides a reliable platform for biosensing with nanotubes
455 citations
TL;DR: In this paper, it was shown that at any given temperature and electric field, the current transport is essentially independent of the substrate material, the film thickness, or the polarity of the electrodes.
Abstract: Measurements of current‐voltage characteristics have been performed on Au‐Si3N4‐Mo and Au‐Si3N4‐Si (degenerate substrate) structures of various nitride‐film thicknesses from 300 A to 3000 A and over a range of temperatures. The films are deposited by the process of reaction of SiCl4 with NH3. It is found that at any given temperature and electric field, the current transport is essentially independent of the substrate material, the film thickness, or the polarity of the electrodes.It is proposed that the current‐transport mechanisms are bulk controlled rather than electrode controlled. The conduction‐current density, J, is the sum of three contributions: J = J1+J2+J3, where J1∼E exp {−q[φ1 − (qE/πe0ed)½]/ kT}, J2∼E2 exp (−E2/E), and J3∼E exp (−qφ3/kT). At high fields and high temperatures J1 dominates the current conduction (the Poole‐Frenkel effect or internal Schottky effect); one obtains a barrier height of (1.3±0.2) V for φ1 and a value of 5.5±1 for the dynamic dielectric constant ed. At high fields a...
445 citations
TL;DR: An overview of metal-semiconductor contacts on solar cells is presented in this article, including the Schottky approach, Fermi level pinning by surface states, and the mechanisms of thermionic emission, thermionic/field emission, and tunneling for current transport.
Abstract: An overview of ohmic contacts on solar cells is presented The fundamentals of metal-semiconductor contacts are reviewed, including the Schottky approach, Fermi level pinning by surface states, and the mechanisms of thermionic emission, thermionic/field emission, and tunneling for current transport The concept of contact resistance is developed and contact resistance data for several different contact materials on both silicon and gallium arsenide over a range of doping densities are summarized Finally, the requirements imposed by solar cells on contact resistance are detailed
414 citations