Showing papers on "Seebeck coefficient published in 2008"

Complex thermoelectric materials.

Abstract: Thermoelectric materials, which can generate electricity from waste heat or be used as solid-state Peltier coolers, could play an important role in a global sustainable energy solution. Such a development is contingent on identifying materials with higher thermoelectric efficiency than available at present, which is a challenge owing to the conflicting combination of material traits that are required. Nevertheless, because of modern synthesis and characterization techniques, particularly for nanoscale materials, a new era of complex thermoelectric materials is approaching. We review recent advances in the field, highlighting the strategies used to improve the thermopower and reduce the thermal conductivity.

High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys

Abstract: The dimensionless thermoelectric figure of merit (ZT) in bismuth antimony telluride (BiSbTe) bulk alloys has remained around 1 for more than 50 years. We show that a peak ZT of 1.4 at 100°C can be achieved in a p-type nanocrystalline BiSbTe bulk alloy. These nanocrystalline bulk materials were made by hot pressing nanopowders that were ball-milled from crystalline ingots under inert conditions. Electrical transport measurements, coupled with microstructure studies and modeling, show that the ZT improvement is the result of low thermal conductivity caused by the increased phonon scattering by grain boundaries and defects. More importantly, ZT is about 1.2 at room temperature and 0.8 at 250°C, which makes these materials useful for cooling and power generation. Cooling devices that use these materials have produced high-temperature differences of 86°, 106°, and 119°C with hot-side temperatures set at 50°, 100°, and 150°C, respectively. This discovery sets the stage for use of a new nanocomposite approach in developing high-performance low-cost bulk thermoelectric materials.

Enhanced thermoelectric performance of rough silicon nanowires

Abstract: Approximately 90 per cent of the world's power is generated by heat engines that use fossil fuel combustion as a heat source and typically operate at 30-40 per cent efficiency, such that roughly 15 terawatts of heat is lost to the environment. Thermoelectric modules could potentially convert part of this low-grade waste heat to electricity. Their efficiency depends on the thermoelectric figure of merit ZT of their material components, which is a function of the Seebeck coefficient, electrical resistivity, thermal conductivity and absolute temperature. Over the past five decades it has been challenging to increase ZT > 1, since the parameters of ZT are generally interdependent. While nanostructured thermoelectric materials can increase ZT > 1 (refs 2-4), the materials (Bi, Te, Pb, Sb, and Ag) and processes used are not often easy to scale to practically useful dimensions. Here we report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter. These nanowires have Seebeck coefficient and electrical resistivity values that are the same as doped bulk Si, but those with diameters of about 50 nm exhibit 100-fold reduction in thermal conductivity, yielding ZT = 0.6 at room temperature. For such nanowires, the lattice contribution to thermal conductivity approaches the amorphous limit for Si, which cannot be explained by current theories. Although bulk Si is a poor thermoelectric material, by greatly reducing thermal conductivity without much affecting the Seebeck coefficient and electrical resistivity, Si nanowire arrays show promise as high-performance, scalable thermoelectric materials.

Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States

Abstract: The efficiency of thermoelectric energy converters is limited by the material thermoelectric figure of merit (zT). The recent advances in zT based on nanostructures limiting the phonon heat conduction is nearing a fundamental limit: The thermal conductivity cannot be reduced below the amorphous limit. We explored enhancing the Seebeck coefficient through a distortion of the electronic density of states and report a successful implementation through the use of the thallium impurity levels in lead telluride (PbTe). Such band structure engineering results in a doubling of zT in p-type PbTe to above 1.5 at 773 kelvin. Use of this new physical principle in conjunction with nanostructuring to lower the thermal conductivity could further enhance zT and enable more widespread use of thermoelectric systems.

Silicon nanowires as efficient thermoelectric materials

Abstract: Thermoelectric materials, capable of converting a thermal gradient to an electric field and vice versa, could be useful in power generation and refrigeration. But the fabrication of the available high-performance thermoelectric materials is not easily scaled up to the volumes needed for large-scale heat energy scavenging applications. Nanostructuring improves thermoelectric capabilities of some materials, but good thermoelectric materials tend not to take readily to nanostructuring. How about silicon? It can be processed on a large scale but has poor thermoelectric properties. Two groups now show that silicon's thermoelectric properties can be vastly improved by structuring it into arrays of nanowires and carefully controlling nanowire morphology and doping. So with more development, silicon may have potential as a thermoelectric material. Thermoelectric materials interconvert thermal gradients and electric fields for power generation or for refrigeration1,2. Thermoelectrics currently find only niche applications because of their limited efficiency, which is measured by the dimensionless parameter ZT—a function of the Seebeck coefficient or thermoelectric power, and of the electrical and thermal conductivities. Maximizing ZT is challenging because optimizing one physical parameter often adversely affects another3. Several groups have achieved significant improvements in ZT through multi-component nanostructured thermoelectrics4,5,6, such as Bi2Te3/Sb2Te3 thin-film superlattices, or embedded PbSeTe quantum dot superlattices. Here we report efficient thermoelectric performance from the single-component system of silicon nanowires for cross-sectional areas of 10 nm × 20 nm and 20 nm × 20 nm. By varying the nanowire size and impurity doping levels, ZT values representing an approximately 100-fold improvement over bulk Si are achieved over a broad temperature range, including ZT ≈ 1 at 200 K. Independent measurements of the Seebeck coefficient, the electrical conductivity and the thermal conductivity, combined with theory, indicate that the improved efficiency originates from phonon effects. These results are expected to apply to other classes of semiconductor nanomaterials.

Observation of the spin Seebeck effect

Abstract: The generation of electric voltage by placing a conductor in a temperature gradient is called the Seebeck effect. Its efficiency is represented by the Seebeck coefficient, S, which is defined as the ratio of the generated electric voltage to the temperature difference, and is determined by the scattering rate and the density of the conduction electrons. The effect can be exploited, for example, in thermal electric-power generators and for temperature sensing, by connecting two conductors with different Seebeck coefficients, a device called a thermocouple. Here we report the observation of the thermal generation of driving power, or voltage, for electron spin: the spin Seebeck effect. Using a recently developed spin-detection technique that involves the spin Hall effect, we measure the spin voltage generated from a temperature gradient in a metallic magnet. This thermally induced spin voltage persists even at distances far from the sample ends, and spins can be extracted from every position on the magnet simply by attaching a metal. The spin Seebeck effect observed here is directly applicable to the production of spin-voltage generators, which are crucial for driving spintronic devices. The spin Seebeck effect allows us to pass a pure spin current, a flow of electron spins without electric currents, over a long distance. These innovative capabilities will invigorate spintronics research.

Theory of enhancement of thermoelectric properties of materials with nanoinclusions

Abstract: Based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons, we present a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions. We show that the Seebeck coefficient can be significantly increased due to a strongly energy-dependent electronic scattering time. By including phonon scattering, we find that the enhancement of $ZT$ due to electron scattering is important for high doping, while at low doping it is primarily due to a decrease in the phonon thermal conductivity.

Theory of enhancement of thermoelectric properties of materials with nanoinclusions.

Abstract: Based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons, we present a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions. We show that the Seebeck coefficient can be significantly increased due to a strongly energy-dependent electronic scattering time. By including phonon scattering, we find that the enhancement of $ZT$ due to electron scattering is important for high doping, while at low doping it is primarily due to a decrease in the phonon thermal conductivity.

Enhanced Thermoelectric Performance of Rough Silicon Nanowires.

Abstract: Approximately 90 per cent of the world's power is generated by heat engines that use fossil fuel combustion as a heat source and typically operate at 30-40 per cent efficiency, such that roughly 15 terawatts of heat is lost to the environment. Thermoelectric modules could potentially convert part of this low-grade waste heat to electricity. Their efficiency depends on the thermoelectric figure of merit ZT of their material components, which is a function of the Seebeck coefficient, electrical resistivity, thermal conductivity and absolute temperature. Over the past five decades it has been challenging to increase ZT > 1, since the parameters of ZT are generally interdependent. While nanostructured thermoelectric materials can increase ZT > 1 (refs 2-4), the materials (Bi, Te, Pb, Sb, and Ag) and processes used are not often easy to scale to practically useful dimensions. Here we report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter. These nanowires have Seebeck coefficient and electrical resistivity values that are the same as doped bulk Si, but those with diameters of about 50 nm exhibit 100-fold reduction in thermal conductivity, yielding ZT = 0.6 at room temperature. For such nanowires, the lattice contribution to thermal conductivity approaches the amorphous limit for Si, which cannot be explained by current theories. Although bulk Si is a poor thermoelectric material, by greatly reducing thermal conductivity without much affecting the Seebeck coefficient and electrical resistivity, Si nanowire arrays show promise as high-performance, scalable thermoelectric materials.

Evaluation of Half‐Heusler Compounds as Thermoelectric Materials Based on the Calculated Electrical Transport Properties

Abstract: A theoretical evaluation of the thermoelectric-related electrical transport properties of 36 half-Heusler (HH) compounds, selected from more than 100 HHs, is carried out in this paper. The electronic structures and electrical transport properties are studied using ab initio calculations and the Boltzmann transport equation under the constant relaxation time approximation for charge carriers. The electronic structure results predict the band gaps of these HH compounds, and show that many HHs are narrow-band-gap semiconductors and, therefore, are potentially good thermoelectric materials. The dependence of Seebeck coefficient, electrical conductivity, and power factor on the Fermi level is investigated. Maximum power factors and the corresponding optimal p- or n-type doping levels, related to the thermoelectric performance of materials, are calculated for all HH compounds investigated, which certainly provide guidance to experimental work. The estimated optimal doping levels and Seebeck coefficients show reasonable agreement with the measured results for some HH systems. A few HHs are recommended to be potentially good thermoelectric materials based on our calculations.

Thermoelectric Behavior of Segregated-Network Polymer Nanocomposites

Abstract: Segregated-network carbon nanotube (CNT)-polymer composites were prepared, and their thermoelectric properties were measured as a function of CNT concentration at room temperature. This study shows that electrical conductivity can be dramatically increased by creating a network of CNTs in the composite, while the thermal conductivity and thermopower remain relatively insensitive to the filler concentration. This behavior results from thermally disconnected, but electrically connected, junctions in the nanotube network, which makes it feasible to tune the properties in favor of a higher thermoelectric figure of merit. With a CNT concentration of 20 wt %, these composites exhibit an electrical conductivity of 4800 S/m, thermal conductivity of 0.34 W/m x K and a thermoelectric figure of merit (ZT) greater than 0.006 at room temperature. This study suggests that polymeric thermoelectrics are possible and provides the basis for further development of lightweight, low-cost, and nontoxic polymer composites for thermoelectric applications in the future.

Thermoelectrics: Direct Solar Thermal Energy Conversion

Abstract: The field of thermoelectricity began in the early 1800s with the discovery of the thermoelectric effect by Thomas Seebeck. Seebeck found that, when the junctions of two dissimilar materials are held at different temperatures (ΔT), a voltage (V) is generated that is proportional to ΔT. The proportionality constant is the Seebeck coeffcient or thermopower: α = −δV/ΔT. When the circuit is closed, this couple allows for direct conversion of thermal energy (heat) to electrical energy. The conversion effciency, ηTE, is related to a quantity called the fgure of merit, ZT, that is determined by three main material parameters: the thermopower α, the electrical resistivity ρ, and the thermal conductivity κ.

Recent Progress in Oxide Thermoelectric Materials: p-Type Ca3Co4O9 and n-Type SrTiO3−

Abstract: Thermoelectric energy conversion technology to convert waste heat into electricity has received much attention. In addition, metal oxides have recently been considered as thermoelectric power generation materials that can operate at high temperatures on the basis of their potential advantages over heavy metallic alloys in chemical and thermal robustness. We have fabricated high-quality epitaxial films composed of oxide thermoelectric materials that are suitable for clarifying the intrinsic “real” properties. This review focuses on the thermoelectric properties of two representative oxide epitaxial films, p-type Ca3Co4O9 and n-type SrTiO3, which exhibit the best thermoelectric figures of merit, ZT (=S2σTκ−1, S = Seebeck coefficient, σ = electrical conductivity, κ = thermal conductivity, and T = absolute temperature) among oxide thermoelectric materials reported to date. In addition, we introduce the recently discovered giant S of two-dimensional electrons confined within a unit cell layer thickness (∼0.4 n...

Silicon Nanowires as Efficient Thermoelectric Materials.

Abstract: Thermoelectric materials, capable of converting a thermal gradient to an electric field and vice versa, could be useful in power generation and refrigeration. But the fabrication of the available high-performance thermoelectric materials is not easily scaled up to the volumes needed for large-scale heat energy scavenging applications. Nanostructuring improves thermoelectric capabilities of some materials, but good thermoelectric materials tend not to take readily to nanostructuring. How about silicon? It can be processed on a large scale but has poor thermoelectric properties. Two groups now show that silicon's thermoelectric properties can be vastly improved by structuring it into arrays of nanowires and carefully controlling nanowire morphology and doping. So with more development, silicon may have potential as a thermoelectric material. Thermoelectric materials interconvert thermal gradients and electric fields for power generation or for refrigeration1,2. Thermoelectrics currently find only niche applications because of their limited efficiency, which is measured by the dimensionless parameter ZT—a function of the Seebeck coefficient or thermoelectric power, and of the electrical and thermal conductivities. Maximizing ZT is challenging because optimizing one physical parameter often adversely affects another3. Several groups have achieved significant improvements in ZT through multi-component nanostructured thermoelectrics4,5,6, such as Bi2Te3/Sb2Te3 thin-film superlattices, or embedded PbSeTe quantum dot superlattices. Here we report efficient thermoelectric performance from the single-component system of silicon nanowires for cross-sectional areas of 10 nm × 20 nm and 20 nm × 20 nm. By varying the nanowire size and impurity doping levels, ZT values representing an approximately 100-fold improvement over bulk Si are achieved over a broad temperature range, including ZT ≈ 1 at 200 K. Independent measurements of the Seebeck coefficient, the electrical conductivity and the thermal conductivity, combined with theory, indicate that the improved efficiency originates from phonon effects. These results are expected to apply to other classes of semiconductor nanomaterials.

Traversing the Metal‐Insulator Transition in a Zintl Phase: Rational Enhancement of Thermoelectric Efficiency in Yb14Mn1−xAlxSb11

Abstract: For high temperature thermoelectric applications, Yb_(14)MnSb_(11) has a maximum thermoelectric figure of merit (zT) of ~1.0 at 1273 K. Such a high zT is found despite a carrier concentration that is higher than typical thermoelectric materials. Here, we reduce the carrier concentration with the discovery of a continuous transition between metallic Yb_(14)MnSb_(11) and semiconducting Yb_(14)AlSb_(11). Yb_(14)Mn_(1-x)Al_xSb_(11) forms a solid solution where the free carrier concentration gradually changes as expected from the Zintl valence formalism. Throughout this transition the electronic properties are found to obey a rigid band model with a band gap of 0.5 eV and an effective mass of 3 m_e. As the carrier concentration decreases, an increase in the Seebeck coefficient is observed at the expense of an increased electrical resistivity. At the optimum carrier concentration, a maximum zT of 1.3 at 1223K is obtained, which is more than twice that of the state-of-the-art Si_(0.8)Ge_(0.2) flown by NASA.

Nanoporous Si as an Efficient Thermoelectric Material

Abstract: Room-temperature thermoelectric properties of n-type crystalline Si with periodically arranged nanometer-sized pores are computed using a combination of classical molecular dynamics for lattice thermal conductivity and ab initio density functional theory for electrical conductivity, Seebeck coefficient, and electronic contribution to the thermal conductivity. The electrical conductivity is found to decrease by a factor of 2-4, depending on doping levels, compared to that of bulk due to confinement. The Seebeck coefficient S yields a 2-fold increase for carrier concentrations less than 2 x 10(19) cm(-3), above which S remains closer to the bulk value. Combining these results with our calculations of lattice thermal conductivity, we predict the figure of merit ZT to increase by 2 orders of magnitude over that of bulk. This enhancement is due to the combination of the nanometer size of pores which greatly reduces the thermal conductivity and the ordered arrangement of pores which allows for only a moderate reduction in the power factor. We find that while alignment of pores is necessary to preserve power factor values comparable to those of bulk Si, a symmetric arrangement is not required. These findings indicate that nanoporous semiconductors with aligned pores may be highly attractive materials for thermoelectric applications.

Phase Transitions in LaFeAsO: Structural, Magnetic, Elastic, and Transport Properties, Heat Capacity and Mössbauer Spectra

Abstract: We present results from a detailed experimental investigation of LaFeAsO, the parent material in the series of ``FeAs'' based oxypnictide superconductors. Upon cooling, this material undergoes a tetragonal-orthorhombic crystallographic phase transition at $\ensuremath{\sim}160\text{ }\text{K}$ followed closely by an antiferromagnetic ordering near 145 K. Analysis of these phase transitions using temperature dependent powder x-ray and neutron-diffraction measurements is presented. A magnetic moment of $\ensuremath{\sim}0.35{\ensuremath{\mu}}_{B}$ per iron is derived from M\"ossbauer spectra in the low-temperature phase. Evidence of the structural transition is observed at temperatures well above the transition temperature (up to near 200 K) in the diffraction data as well as the polycrystalline elastic moduli probed by resonant ultrasound spectroscopy measurements. The effects of the two phase transitions on the transport properties (resistivity, thermal conductivity, Seebeck coefficient, and Hall coefficient), heat capacity, and magnetization of LaFeAsO are also reported, including a dramatic increase in the magnitude of the Hall coefficient below 160 K. The results suggest that the structural distortion leads to a localization of carriers on Fe, producing small local magnetic moments which subsequently order antiferromagnetically upon further cooling. Evidence of strong electron-phonon interactions in the high-temperature tetragonal phase is also observed.

Thermoelectric performance of lanthanum telluride produced via mechanical alloying

Abstract: Lanthanum telluride (La3−xTe4) has been synthesized via mechanical alloying and characterized for thermoelectric performance. This work confirms prior reports of lanthanum telluride as a good high-temperature thermoelectric material, with zT~1.1 obtained at 1275 K. The thermoelectric performance is found to be better than that of SiGe, the current state-of-the-art high-temperature n-type thermoelectric material. Inherent self-doping of the system allows control over carrier concentration via sample stoichiometry. Prior high-temperature syntheses were prone to solute rejection in liquid and vapor phases, which resulted in inhomogeneous chemical composition and carrier concentration. The low-temperature synthesis provides homogeneous samples with acceptable control of the stoichiometry, and thus allows a thorough examination of the transition from a heavily doped degenerate semiconductor to a nondegenerate semiconductor. The effect of carrier concentration on the Hall mobility, Seebeck coefficient, thermal and electrical conductivity, lattice thermal conductivity, and thermoelectric compatibility are examined for 0.03<=x<=0.33.

The thermoelectric properties of bulk crystalline n- and p-type Mg2Si prepared by the vertical Bridgman method

Abstract: Bulk Mg2Si crystals were grown using the vertical Bridgman melt growth method. The n-type and p-type dopants, bismuth (Bi) and silver (Ag), respectively, were incorporated during the growth. X-ray powder diffraction analysis revealed clear peaks of Mg2Si with no peaks associated with the metallic Mg and Si phases. Residual impurities and process induced contaminants were investigated by using glow discharge mass spectrometry (GDMS). A comparison between the results of GDMS and Hall effect measurements indicated that electrical activation of the Bi doping in the Mg2Si was sufficient, while activation of the Ag doping was relatively smaller. It was shown that an undoped n-type specimen contained a certain amount of aluminum (Al), which was due either to residual impurities in the Mg source or the incorporation of process-induced impurities. Thermoelectric properties such as the Seebeck coefficient and the electrical and thermal conductivities were measured as a function of temperature up to 850 K. The dimen...

Thermoelectric Performance of Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate)

Abstract: Thermoelectric (TE) performances are systematically investigated for the pellets of poly(3,4-ethylenedioxythio-phene):poly(styrenesulfonate) (PEDOT:PSS) with different organic additives and heating process as organic TE materials. The electrical conductivity, Seebeck coefficient and thermal conductivity versus temperature are determined, respectively. It is found that there is no distinct change for the Seebeck coefficient among each sample with the additions of dimethyl sulfoxide and ethylene glycol. The thermal conductivity measured in a wide range of temperature indicates that the PEDOT:PSS pellet have an extremely low value. The highest figure of merit (ZT = 1.75 × 10−3) is observed at 270K among the PEDOT:PSS pellets.

Field-effect-modulated Seebeck coefficient in organic semiconductors.

Abstract: Central to the operation of organic electronic and optoelectronic devices is the transport of charge and energy in the organic semiconductor, and to understand the nature and dynamics of charge carriers is at the focus of intense research efforts. As a basic transport property of solids, the Seebeck coefficient S provides deep insight as it is given by the entropy transported by thermally excited charge carriers and involves in the simplest case only electronic contributions where the transported entropy is determined by details of the band structure and scattering events. We have succeeded for the first time to measure the temperature- and carrier-density-dependent thermopower in single crystals and thin films of two prototypical organic semiconductors by a controlled modulation of the chemical potential in a field-effect geometry. Surprisingly, we find the Seebeck coefficient to be well within the range of the electronic contribution in conventional inorganic semiconductors, highlighting the similarity of transport mechanisms in organic and inorganic semiconductors. Charge and entropy transport is best described as band-like transport of quasiparticles that are subjected to scattering, with exponentially distributed in-gap trap states, and without further contributions to S. The nature of the charge transport in organic semiconductors is subject to intense research. A study on the thermal and charge transport of single-crystal thin-film polymers now shows close similarities between the transport properties of organic and inorganic semiconductors.

CaMn1−x NbxO3 (x ≤ 0.08) Perovskite-Type Phases As Promising New High-Temperature n-Type Thermoelectric Materials

Abstract: Perovskite-type CaMn1−xNbxO3±δ (x = 0.02, 0.05, and 0.08) compounds were synthesized by applying both a “chimie douce” (SC) synthesis and a classical solid state reaction (SSR) method. The crystallographic parameters of the resulting phases were determined from X-ray, electron, and neutron diffraction data. The manganese oxidations states (Mn4+/Mn3+) were investigated by X-ray photoemission spectroscopy. The orthorhombic CaMn1−xNbxO3±δ (x = 0.02, 0.05, and 0.08) phases were studied in terms of their high-temperature thermoelectric properties (Seebeck coefficient, electrical resistivity, and thermal conductivity). Differences in electrical transport and thermal properties can be correlated with different microstructures obtained by the two synthesis methods. In the high-temperature range, the electron-doped manganate phases exhibit large absolute Seebeck coefficient and low electrical resistivity values, resulting in a high power factor, PF (e.g., for x = 0.05, S1000K = −180 μV K −1, ρ1000K = 16.8 mΩ cm, a...

Physical properties of Hastelloy® C-276™ at cryogenic temperatures

Abstract: In recent years, the Ni–Mo–Cr superalloy Hastelloy® C-276™ has been used as a substrate material for fabricating superconducting tapes such as YBCO and MgB2 coated conductors. With increasing piece length, these coated conductors are within reach of large scale commercial applications. However, data on the physical properties of Hastelloy C-276 at temperatures relevant for these applications are not yet available. In this work, physical properties including magnet succeptibility, specific heat, electrical resistivity, and the Seebeck coefficient are measured from 2to300K and thermal conductivity from 2to200K. Our results show that Hastelloy C-276 exhibits Curie paramagnetism between 4 and 300K with a Curie constant C=0.091K. A spin-glass-like behavior is observed below 3K. The electrical resistivity has a minimum at ∼12K, and shows a linear weak T dependence at higher temperatures. The specific heat Cp between 15 and 40K follows Cp=γT+AT3. Below ∼10K, an upturn in Cp∕T with decreasing T is interpreted by ...

Hydrothermal Synthesis and Thermoelectric Transport Properties of Impurity‐Free Antimony Telluride Hexagonal Nanoplates

Abstract: Impurity-free single-crystalline antimony telluride hexagonal nanoplates (see figure) are synthesized by a facile and quick hydrothermal treatment without any organic additives or templates The inherent crystal structure is the driving force for the growth of these Sb2Te3 hexagonal nanoplates Films of these nanoplates shows p-type behavior, and exhibit a promisingly high Seebeck coefficient of 425 mu V K-1 at room temperature

Recent advances on thermoelectric materials

Abstract: By converting waste heat into electricity through the thermoelectric power of solids without producing greenhouse gas emissions, thermoelectric generators could be an important part of the solution to today’s energy challenge. There has been a resurgence in the search for new materials for advanced thermoelectric energy conversion applications. In this paper, we will review recent efforts on improving thermoelectric efficiency. Particularly, several novel proof-of-principle approaches such as phonon disorder in phonon-glass-electron crystals, low dimensionality in nanostructured materials and charge-spin-orbital degeneracy in strongly correlated systems on thermoelectric performance will be discussed.