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Semiconductor

About: Semiconductor is a(n) research topic. Over the lifetime, 72638 publication(s) have been published within this topic receiving 1287460 citation(s). The topic is also known as: semiconductor material.

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Journal ArticleDOI
A. P. Alivisatos1Institutions (1)
16 Feb 1996-Science
Abstract: Current research into semiconductor clusters is focused on the properties of quantum dots-fragments of semiconductor consisting of hundreds to many thousands of atoms-with the bulk bonding geometry and with surface states eliminated by enclosure in a material that has a larger band gap. Quantum dots exhibit strongly size-dependent optical and electrical properties. The ability to join the dots into complex assemblies creates many opportunities for scientific discovery.

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10,373 citations


Journal ArticleDOI
Michael H. Huang1, Samuel S. Mao, Henning Feick1, Haoquan Yan2  +6 moreInstitutions (2)
08 Jun 2001-Science
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.

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Abstract: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 03 nanometer The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis

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8,414 citations


Book
01 Jan 1940-
Abstract: 1. Introduction 2. Theory of Electrons in a Non-Crystalline Medium 3. Phonons and Polarons 4. The Fermi Glass and the Anderson Transition 5. Liquid Metals and Semimetals 6. Non-Crystalline Semiconductors 7. Tetrahedrally-Bonded Semiconductors - Amorphous Germanium and Silicon 8. Aresnic and Other Three-Fold Co-ordinated Materials 9. Chalcogenide and Other Glasses 10. Selenium, Tellurium, and their Alloys

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7,993 citations


Journal ArticleDOI
Kenji Nomura1, Hiromichi Ohta1, Akihiro Takagi1, Toshio Kamiya1  +2 moreInstitutions (1)
25 Nov 2004-Nature
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.

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Abstract: Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.

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6,692 citations


Journal ArticleDOI
Tsuneya Ando1, Alan B. Fowler2, Frank Stern2Institutions (2)
Abstract: The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.

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5,462 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202234
20211,307
20201,925
20192,177
20182,193
20172,103

Top Attributes

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Topic's top 5 most impactful authors

Shunpei Yamazaki

414 papers, 7.2K citations

Hans-Joachim Schulze

148 papers, 665 citations

Stephen J. Pearton

49 papers, 3K citations

Kangguo Cheng

40 papers, 410 citations

Alexander Reznicek

37 papers, 318 citations