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Semiconductor laser theory
About: Semiconductor laser theory is a research topic. Over the lifetime, 38542 publications have been published within this topic receiving 713789 citations.
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TL;DR: If a three-dimensionally periodic dielectric structure has an electromagnetic band gap which overlaps the electronic band edge, then spontaneous emission can be rigorously forbidden.
Abstract: It has been recognized for some time that the spontaneous emission by atoms is not necessarily a fixed and immutable property of the coupling between matter and space, but that it can be controlled by modification of the properties of the radiation field. This is equally true in the solid state, where spontaneous emission plays a fundamental role in limiting the performance of semiconductor lasers, heterojunction bipolar transistors, and solar cells. If a three-dimensionally periodic dielectric structure has an electromagnetic band gap which overlaps the electronic band edge, then spontaneous emission can be rigorously forbidden.
12,787 citations
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Abstract: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 03 nanometer The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis
8,592 citations
Book•
21 Mar 1997
TL;DR: The physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GAN p-type GaN InGaN Zn and Si co-doped GaN double-heterostructure blue and blue green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGAN MQW LDs latest results as discussed by the authors.
Abstract: Physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GaN p-Type GaN InGaN Zn and Si co-doped InGaN/AlGaN double-heterostructure blue and blue-green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGaN MQW LDs latest results - lasers with self-organized InGaN quantum dots
3,805 citations
TL;DR: In this paper, a new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D), and the effects of such confinements on the lasing characteristics are analyzed.
Abstract: A new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D). Effects of such confinements on the lasing characteristics are analyzed. Most important, the threshold current of such laser is predicted to be far less temperature sensitive than that of conventional lasers, reflecting the reduced dimensionality of electronic state. In the case of 3D‐QW laser, the temperature dependence is virtually eliminated. An experiment on 2D quantum well lasers is performed by placing a conventional laser in a strong magnetic field (30 T) and has demonstrated the predicted increase of T0 value from 144 to 313 °C.
3,069 citations
TL;DR: In this paper, a Phenomenological Approach to Diode Lasers is presented, where mirrors and Resonators are used for diode luminaries, and coupled-mode theory is applied.
Abstract: Ingredients. A Phenomenological Approach to Diode Lasers. Mirrors and Resonators for Diode Lasers. Gain and Current Relations. Dynamic Effects. Perturbation and Coupled--Mode Theory. Dielectric Waveguides. Photonic Integrated Circuits. Appendices. Index.
2,550 citations