Showing papers on "Semiconductor optical gain published in 1967"
TL;DR: In this paper, experimental results obtained on CdS, ZnO, and CdSe are presented which show electron-beam-pumped laser emission resulting from the decay of free excitons to photons and longitudinal optical phonons.
Abstract: Experimental results obtained on CdS, ZnO, and CdSe are presented which show electron‐beam‐pumped laser emission resulting from the decay of free excitons to photons and longitudinal optical (LO) phonons. Calculations based on available absorption data for ZnO and CdS show that at 77°K the required exciton density for stimulated emission is about 1017 and 1018 cm−3, respectively.
57 citations
TL;DR: Bulk negative resistivity properties of uniform semiconductors have led to new devices for pulse regeneration, logic function generation, amplification, and millimeter-wave power generation as discussed by the authors, where the ac gain is derived from the bulk negative-resistance property of certain uniform semiconductor devices, rather than from the properties of junctions between different types of semiconductor materials.
Abstract: Recent research on semiconductors that exhibit bulk negative resistivity has led to new devices for pulse regeneration, logic function generation, amplification, and millimeter-wave power generation. These are bulk devices in the sense that ac gain is derived from the bulk negative-resistance property of certain uniform semiconductors, rather than from the properties of junctions between different types of semiconductors. Bulk devices are capable of operating with more power at higher speeds and frequencies than conventional junction devices such as transistors.
17 citations
01 Jan 1967
TL;DR: In this paper, a sheet-like laser beam was observed from electron-bombarded CdS and ZnO single crystals, which is a result of total internal reflection from four sides of the crystal cavity.
Abstract: A sheet-like laser beam is observed from electron-bombarded CdS and ZnO single crystals. The far-field pattern extends 360° in azimuth and 5 to 10° perpendicular to this plane. The emission is in a plane perpendicular to the c axis of the crystal and is a result of total internal reflection from four sides of the crystal cavity.
12 citations
7 citations
01 Dec 1967
TL;DR: Gain measurements on some of the strong emission lines of a pulsed water vapor laser are presented in this article, where an absorption effect has been found which suggests that the laser transitions take place between highly excited molecular states.
Abstract: Gain measurements on some of the strong emission lines of a pulsed water vapor laser are presented. For the strong 27.97-micron line, the gain has been measured as a function of both current excitation and pressure. An absorption effect has been found which suggests that the laser transitions take place between highly excited molecular states.
4 citations
2 citations
TL;DR: In this paper, the authors discuss characteristics of the different laser sources with particular emphasis on the display output power needs, and the effects related to the controllable change of the wavelength of coherent radiation incident on the nonlinear media.
Abstract: This paper will first discuss characteristics of the different laser sources with particular emphasis on the display output power needs. There are a number of nonlinear optical effects that appear useful to display systems; of particular interest for displays are the effects related to the controllable change of the wavelength of coherent radiation incident on the nonlinear media. The nonlinear techniques to be discussed are those related to harmonic generation, Raman laser action, and optical parametric amplification and oscillation. Calculations on the parametric oscillation effect show that a one watt blue or UV laser can effectively provide the optical pumping which would result in a very appreciable tunable optical output over the visible spectrum.