Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
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12 May 2013TL;DR: In this article, the authors numerically and experimentally demonstrate that, by combining two post-processing methods (multi-bit extraction and bitwise OR exclusive (XOR)) in a single chaotic semiconductor ring laser (SRL), it is possible to generate true random bits with a bit rate up to 40 Gb/s from a chaos bandwidth of ≈ 2 GHz.
Abstract: Here, we numerically and experimentally demonstrate that, by combining two post-processing methods (multi-bit extraction and bitwise OR-exclusive (XOR) operations). in a single chaotic semiconductor ring laser (SRL), it is possible to generate true random bits with a bit rate up to 40 Gb/s from a chaos bandwidth of ≈ 2 GHz, thanks to the device ability of lasing in two directional modes and the fact that the two mode signals have low correlations. In addition, SRLs can be easily implemented on chip.
41 citations
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TL;DR: An optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm, which operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength.
Abstract: We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength. Maximum output power of 172 mW at 615 nm was achieved from a single output. Combined power from two outputs was 320 mW. The wavelength of visible emission could be tuned by 4.5 nm using a thin glass etalon inside the cavity.
41 citations
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TL;DR: In this article, the gain of p-doped and intrinsic InAs∕GaAs quantum dot lasers is studied at room temperature and at 350K, and it is shown that, due to the wider nonthermal distribution of carriers amongst the dots at T=293K, the peak net gain of the p-Doped lasers is actually less at low injection than that of the undoped devices.
Abstract: The gain of p-doped and intrinsic InAs∕GaAs quantum dot lasers is studied at room temperature and at 350K. Our results show that, although one would theoretically expect a higher gain for a fixed carrier density in p-doped devices, due to the wider nonthermal distribution of carriers amongst the dots at T=293K, the peak net gain of the p-doped lasers is actually less at low injection than that of the undoped devices. However, at higher current densities, p doping reduces the effect of gain saturation and therefore allows ground-state lasing in shorter cavities and at higher temperatures.
41 citations
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TL;DR: In this article, a set of improved Langevin rate equations for external-cavity semiconductor lasers which can be used to solve transient as well as steady-state problems is derived.
Abstract: A set of improved Langevin rate equations for external-cavity semiconductor lasers which can be used to solve transient as well as steady-state problems is derived. A simple relationship among chirp reduction, line narrowing and dynamic stability is given. An experiment on an external-coupled-cavity semiconductor laser consisting of a 1.3- mu m buried-heterostructure laser diode with an antireflection (AR)-coated facet and a 4-mm GRIN rod is reported. Because of its strong optical feedback, it provides a stable single mode, which is not sensitive to the environmental perturbations. This agrees with the theoretical results. No mode jumping occurred during 12 h continuous observation. >
41 citations
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TL;DR: In this paper, the authors measured the gain saturation coefficients for both strained and unstrained multiple quantum-well distributed feedback (MQW-DFB) laser with a wavelength deviation delta lambda of -350 AA and 2.45 x 10/sup -17/ cm/sup 3/
Abstract: The gain saturation coefficients were measured for strained and unstrained multiple quantum-well distributed feedback (MQW-DFB) lasers. The gain saturation coefficient depends on the deviation of the laser's transverse-magnetic (TM) mode gain peak wavelength from its transverse-electric (TE) mode gain peak wavelength delta lambda , which is related to the strain on the active-layer wells. The gain saturation coefficient epsilon increased with increasing compressed strain on the active-layer wells. The coefficient epsilon of the unstrained MQW DFB laser with a wavelength deviation delta lambda of -350 AA was 2.45 x 10/sup -17/ cm/sup 3/, and epsilon increased up to 12.6 x 10/sup -17/ cm/sup 3/ in the SL-MQW DFB laser with a wavelength difference delta lambda of -890 AA.
41 citations