Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
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TL;DR: In this article, the authors studied the optical gain in terms of the transition between a localized state and a continuous subband state with small carrier concentration, and showed that the enhanced optical gain is strongly enhanced by excitonic effects through the coupling between the two transitions.
Abstract: Excitonic effects of optical gain in quantum wells have been studied theoretically in a three-band model. Taking into account an additional localized level in the energy gap, we obtain the optical gain in terms of the transition between a localized state and a continuous subband state with small carrier concentration. Simultaneously, excitonic absorption also occurs near the band-edge transition. It is shown that the optical gain is strongly enhanced by excitonic effects through the coupling between the two transitions. This enhanced optical gain might show the realization of very-low-threshold current-laser diodes.
38 citations
TL;DR: In this article, the authors proposed a simple method for simultaneously generating multiple streams of high-quality chaotic signals using multichaotic lasers, where the time delay is effectively concealed in the autocorrelation function and delayed mutual information calculated from the chaotic time series.
Abstract: Photonic generation of wideband chaotic signals with time delay signature elimination is investigated experimentally and numerically based on a semiconductor laser (slave laser) with chaotic optical injection from a master laser. The master laser is subject to moderate optical feedback where the feedback strength and external-cavity length are fixed, while the slave laser stands alone. The experimental results show that wideband chaotic signals with successful time delay concealment can be generated in the slave laser by simply adjusting the coupling strength and frequency detuning between the two lasers. Furthermore, the numerical results are in accordance with the experimental observations. Finally, we propose a simple method for simultaneously generating multiple streams of high-quality chaotic signals using multichaotic lasers, where the time delay is effectively concealed in the autocorrelation function and delayed mutual information calculated from the chaotic time series.
38 citations
TL;DR: In this paper, the results of a microscopic treatment of carrier-carrier scattering effects in the optical gain and refractive index spectra of a quantum-well semiconductor laser structure are described.
Abstract: This paper describes the results of a microscopic treatment of carrier-carrier scattering effects in the optical gain and refractive index spectra of a quantum-well semiconductor laser structure. The approach uses the Semiconductor Maxwell Bloch equations to describe the interaction between the carriers and the laser field, in the presence of many-body Coulomb interactions. Coulomb correlation effects are treated at the level of quantum kinetic theory in the Markovian limit. This approach shows the presence of nondiagonal Coulomb correlation contributions, in addition to the familiar diagonal contributions giving rise to polarization dephasing.
38 citations
Patent•
11 Aug 2000
TL;DR: In this paper, a fixed laser of easy maintenance and high durability is used as a laser and further made into linear laser light and throughput is improved so that the production cost is reduced as a whole.
Abstract: PROBLEM TO BE SOLVED: To provide a laser device and a laser annealing method, with which the crystalline semiconductor film of great crystal particle size can be provided and the running cost is reduced. SOLUTION: The fixed laser of easy maintenance and high durability is used as a laser and further made into linear laser light and throughput is improved so that the production cost is reduced as a whole. Further, by irradiating the front and back of an amorphous semiconductor film with such laser light, the crystalline semiconductor film of great crystal particle size is provided.
38 citations
Posted Content•
TL;DR: In this article, the authors review some of the models and solution techniques used in the simulation of high-power semiconductor lasers and to address open questions and reveal the factors that limit the output power at very high injecton currents based on a numerical solution of the thermodynamic based drift-diffusion equations.
Abstract: The aim of this paper is to review some of the models and solution techniques used in the simulation of high-power semiconductor lasers and to address open questions. We discuss some of the peculiarities in the description of the optical field of wide-aperture lasers. As an example, the role of the substrate as a competing waveguide in GaAs-based lasers is studied. The governing equations for the investigation of modal instabilities and filamentation effects are presented and the impact of the thermal-lensing effect on the spatiotemporal behavior of the optical field is demonstrated. We reveal the factors that limit the output power at very high injecton currents based on a numerical solution of the thermodynamic based drift-diffusion equations and elucidate the role of longitudinal spatial holeburning.
38 citations