Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
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Proceedings Article•
10 May 1992
TL;DR: In this article, the authors characterized optical Bloch waves in a semiconductor photonic lattice comprising periodic cells etched in an epitaxial multi-layer, and showed that the wave propagation from the lattice provides a direct probe of the optical bloch states.
Abstract: We have characterized optical Bloch waves in a semiconductor photonic lattice comprising periodic cells etched in an epitaxial multi-layer. Stimulated emission from the lattice provides a direct probe of the optical Bloch states.
38 citations
TL;DR: In this article, the authors derived and discussed a theory for the (coupled) spatio-temporal light-field and carrier dynamics of novel semiconductor lasers, combining a density matrix description of the optoelectronic properties of quantum well gain media with the full-time-domain Maxwell equations for the electromagnetic (i.e. the coupled electric and magnetic) field dynamics.
38 citations
TL;DR: In this article, an all-optical flip-flop based on two coupled actively mode-locked fiber ring laser is described. But the flip-FLOP operation is not discussed.
Abstract: We report an all-optical flip-flop that is based on two coupled actively mode-locked fiber ring lasers. The lasers are coupled so that when one of the lasers lases, it quenches lasing in the other laser. The state of the flip-flop is determined by the wavelength of the laser that is currently lasing. The concept of the flip-flop is explained and experimental results are presented that indicate a flip-flop operation over 25-dB contrast ratio and less than 0.3-mW switching power.
38 citations
TL;DR: In this paper, the effect of nonlinear gain on the frequency response of semiconductor lasers at high bias powers was analyzed using the multimode rate equations, and it was shown that despite the strong damping of the relaxation oscillations due to non-linear gain, bandwidths of over 40 GHz appear to be attainable in semiconductor laser.
Abstract: The effect of nonlinear gain on the frequency response of semiconductor lasers at high bias powers is analysed using the multimode rate equations. In spite of the strong damping of the relaxation oscillations due to nonlinear gain, bandwidths of over 40 GHz appear to be attainable in semiconductor lasers.
38 citations
Patent•
25 Jun 1999
TL;DR: In this article, a semiconductor laser array including a plurality of index-guided semiconductor lasers different in oscillation wavelength is made by collectively controlling their double transverse modes and collectively processing them to form their current blocking structures and buried layers.
Abstract: A semiconductor laser array including a plurality of index-guided semiconductor lasers different in oscillation wavelength is made by collectively controlling their double transverse modes and collectively processing them to form their current-blocking structures and buried layers. Thus, a semiconductor laser having a flat element surface and excellent in heat radiation can be made in a reduced number of manufacturing steps. When the laser array of this multi-wavelength type and a detector PD are mounted with a predetermined positional relationship, return light from an optical disk can be converted into a single point to enable detection thereof at PD on one chip. Therefore, an optical disk driving apparatus remarkably reduced in size and weight and having a high reliability can be realized.
37 citations