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Semiconductor optical gain

About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.


Papers
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Journal ArticleDOI
TL;DR: The Bogatov effect of asymmetric gain suppression in semiconductor lasers is derived and the potential of the model for a two and three-mode laser is illustrated by numerical and analytical methods.
Abstract: We present a set of rate equations for the modal amplitudes and carrier-inversion moments that describe the deterministic multi-mode dynamics of a semiconductor laser due to spatial hole burning. Mutual interactions among the lasing modes, induced by high- frequency modulations of the carrier distribution, are included by carrier-inversion moments for which rate equations are given as well. We derive the Bogatov effect of asymmetric gain suppression in semiconductor lasers and illustrate the potential of the model for a two and three-mode laser by numerical and analytical methods.

36 citations

Journal ArticleDOI
TL;DR: In this article, a highly accurate method of measuring optical loss in individual semiconductor lasers is presented and compared with other methods, which illustrate the suitability of this technique for studying the dependence of loss on temperature and carrier density.
Abstract: A highly accurate method of measuring optical loss in individual semiconductor lasers is presented and compared with other methods. Measured loss data for 1.3 mu m semiconductor lasers are presented that illustrate the suitability of this technique for studying the dependence of loss on temperature and carrier density.

36 citations

Patent
31 Oct 2007
TL;DR: In this article, a PLC-ECL type wavelength tunable light source was proposed for the manufacturing and application of a WDM-PON with initialization and stabilization functions.
Abstract: In the manufacture and application of a PLC-ECL type wavelength tunable light source, provided is a wavelength tunable mechanism with improved performance and stability, a light source with improved packaging performance and mass productivity, and a light source applied to a WDM-PON with initialization and stabilization functions. The wavelength tunable light source having a PLC (planar lightwave circuit)-ECL (external cavity laser) structure includes a first housing in which a semiconductor optical gain medium is mounted, a second housing in which a PLC device is mounted, and a third housing in which an optical fiber is mounted. The first, second, and third housings make an optical axis alignment through an optical coupling lens and combined in a laser welding method.

36 citations

Journal ArticleDOI
TL;DR: In this article, a dynamic theory of semiconductor laser amplifiers is developed that takes into account the coherent time-dependent amplification of an incident optical pulse as well as the nonlinear dynamics of the semiconductor LM when driven be an unbiased injection-current pulse.
Abstract: A dynamic theory of semiconductor laser amplifiers is developed that takes into account the coherent time-dependent amplification of an incident optical pulse as well as the nonlinear dynamics of the semiconductor laser when driven be an unbiased injection-current pulse. For suitable time delays between the optical and the electrical pulse, a strongly nonlinear self-induced shortening of the emitted laser pulse is predicted. >

36 citations

Journal ArticleDOI
TL;DR: In this article, the authors provide an update on the further development of optically pumped semiconductor lasers based on the InAs∕InGaSb ∕InAs type-II quantum wells, and show increased power generation and inherent flexibility to produce devices that can emit at any wavelength in the ∼2.4μm to ∼9.3μm range with consistently high photon-to-photon conversion rates.
Abstract: We provide an update on the further development of optically pumped semiconductor lasers based on the InAs∕InGaSb∕InAs type-II quantum wells. We show increased power generation, as well as the inherent flexibility to produce devices that can emit at any wavelength in the ∼2.4μm to ∼9.3μm range with consistently high photon-to-photon conversion rates.

36 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20233
20229
20211
20201
20187
201789