Semiconductor optical gain

About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.

Optical gain in InGaN∕InGaAlN quantum well structures with zero internal field

Abstract: Electronic and optical properties of InGaN∕InAlGaN quantum well with zero internal field were investigated by using the non-Markovian gain model with many-body effects. The In composition x in the well to give zero internal field is shown to increase with the In composition y in the barrier. The InGaN∕AlGaInN system has much larger optical gain than the conventional InGaN∕GaN system because the optical matrix element is largely enhanced due to disappearance of the internal field. The peak gain is shown to decrease with increasing In composition for both systems. The decrease in the optical gain for the InGaN∕AlGaInN system is mainly due to the reduction in quasi-Fermi-level separation while that for the InGaN∕GaN system is due to the reduction in the matrix element.

The Q-switching instability in passively mode-locked lasers

Abstract: This study proposes a new multiple time scale analysis of the mode-locked laser equations. The analysis is valid for all class B (solid state and semiconductor) lasers and is detailed for a four-level laser with fast saturable losses. This work also presents the stability diagram of class B lasers, which is defined as the laser relaxation oscillation frequency.

Femtosecond hybrid mode-locked semiconductor laser and amplifier dynamics

Abstract: We describe the generation of femtosecond high power optical pulses using hybrid passive-active mode-locking techniques. Angle stripe geometry GaAs/AlGaAs semiconductor laser amplifiers are employed in an external cavity including prisms and a stagger-tuned quantum-well saturable absorber. An identical amplifier also serves as an optical power amplifier in a stretched pulse amplification and recompression sequence. After amplification and pulse compression this laser system produces 200 fs, 160 W peak power pulses. We discuss and extend our theory, and supporting phenomenological models, of picosecond and subpicosecond optical pulse amplification in semiconductor laser amplifiers which has been successful in calculating measured spectra and time-resolved dynamics in our amplifiers. We have refined the theory to include a phenomenological model of spectral hole-burning for finite intraband thermalization time. Our calculations are consistent with an intra-band time of approximately 60 fs. This theory of large signal subpicosecond pulse amplification will be an essential tool for understanding the mode-locking dynamics of semiconductor lasers and for analysis of high speed multiple wave-length optical signal processing and transmission devices and systems based on semiconductor laser amplifiers.

Advances in semiconductor lasers and applications to optoelectronics

Abstract: This volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers. To understand scattering processes in heterostructure lasers and related optoelectronic devices, it is essential to consider the role of dimensional confinement of charge carriers as well as acoustical and optical phonons in quantum structures. Indeed, it is important to consider the confinement of both phonons and carriers in the design and modelling of novel semiconductor lasers such as the tunnel injection laser, quantum well intersubband lasers, and quantum dot lasers. The full exploitation of dimensional confinement leads to the capability of scattering time engineering in novel semiconductor lasers.

Principles of Semiconductor Laser Diodes and Amplifiers: Analysis and Transmission Line Laser Modelling

Abstract: The Evolution of Optical Fibre Communication Systems Basic Principles of Optical Amplifiers Optical Amplification in Semiconductor Laser Diodes Analysis of Transverse Modal Fields in Semiconductor Laser Amplifiers Analysis and Modelling of Semiconductor Laser Diode Amplifiers: Gain and Saturation Characteristics Analysis and Modelling of Semiconductor Laser Diode Amplifiers: Noise Characteristics Experimental Studies on Semiconductor Laser Diode Amplifiers Novel Semiconductor Laser Diode Amplifier Structure Picosecond Pulse Amplification in Tapered-Waveguide Semiconductor Laser Diode Amplifiers Sub-Picosecond Gain Dynamic in Highly-Index Guided Tapered-Waveguide Semiconductor Laser Diode Optical Amplifiers Saturation Intensity of InGaAsP Tapered Travelling-Wave Semiconductor Laser Amplifier Structures Wavelength Conversion in Tapered-Waveguide Laser Diode Amplifiers Using Cross-Gain Modulation The Semiconductor Laser: Basic Concepts and Applications Microwave Circuit Techniques and Semiconductor Laser Modelling Microwave Circuit Models of Semiconductor Lasers Transmission-Line Laser Model of Tapered Waveguide Lasers and Amplifiers Novel Integrated Mode-Locked Laser Design Summary, Conclusion and Suggestions