Semiconductor optical gain

About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.

Hundred-Picoseconds Electro-Optical Switching With Semiconductor Optical Amplifiers Using Multi-Impulse Step Injection Current

Abstract: An ultrafast electro-optical amplified switch based on chip-on-carrier semiconductor optical amplifier with high optical contrast (33 dB) is presented. Switching times up to 115 ps with small overshoot were achieved by using the multi-impulse step injected current technique. These results are compared with previous preimpulse step injected current technique, and achieve a reduction of the inherent, post switching gain fluctuations without worsening the switching times. In addition, pulse formats for controlling such a kind of electro-optical switches are numerically analyzed and compared with experiments.

Short-wavelength laser light source and optical information processing aparatus

Abstract: A short-wavelength laser light source having a semiconductor laser for emitting laser light is provided. The light source includes a power supply for driving the semiconductor laser and thereby causing the semiconductor laser to emit a fundamental wave, a polarization inversion-type light-wavelength converting device for generating from the fundamental wave a harmonic wave having a shorter wavelength than the fundamental wave; and laser light feedback means for feeding light of the fundamental wave lying in a selected wavelength region back to the semiconductor laser, thereby achieving oscillation wavelength locking. Said power supply supplies to the semiconductor laser a high-frequency power containing AC components oscillating in a cycle short enough to cause the semiconductor laser to emit the fundamental wave in the form of pulsed laser light.

Optical coupling system with intermediate coupling medium

Abstract: An optical coupling system between a semiconductor laser and an optical fiber is disclosed. The system is characterized in that a medium having a refractive index greater than 1 but smaller than the refractive index of the semiconductor laser material is packed between the end surface of a distributed feedback type or distributed Bragg reflector type semiconductor laser and the end surface of an optical fiber.

Effect of uniaxial stress on optical gain in semiconductors

Abstract: It has been previously shown that the optical gain for impurity‐band transitions is altered by stress and the results of that analysis have been used to explain the ‘‘anomalous’’ polarization characteristics of semiconductor lasers. However, in semiconductor lasers with undoped active layer the stimulated emission is observed at band‐to‐band transitions. The effect of uniaxial stress on optical gain for band‐to‐band transitions in direct gap semiconductors is calculated in this paper. The optical gain for linearly polarized light with electric vector along the stress is found to be larger than that for light polarized normal to the stress even in the absence of impurities. This arises from the stress‐induced anisotropy of the band‐edge effective masses. The result shows that in semiconductor injection lasers, the optical gain for the TM mode (E normal to the junction) is larger than that of the TE mode (E along the junction) in the presence of a sufficient compressive stress normal to the junction. The st...