Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this article, the authors modified the high-pressure CO 2 gain spectra to include gain contributions from the newly discovered 00°2 and 00°3 sequence bands and showed that the inclusion of these bands has important consequences for TE CO 2 lasers.
Abstract: Previous theories of high-pressure CO 2 gain spectra have been modified to include gain Contributions from the newly discovered 00°2 and 00°3 sequence bands. It is shown that the inclusion of these bands has important consequences for TE CO 2 lasers. At a pressure of 14 atm, the sequence bands typically cause a 40 percent increase in calculated gain at all frequencies. Even at pressures as low as 1 atm, the presence of the sequence lines leads to anomalous gain coefficients on many of the regular 00°1 laser lines.
32 citations
TL;DR: In this paper, the authors demonstrate within a metrology experiment the applicability of a recently proposed temporally incoherent semiconductor laser source which relies on nonlinear dynamics and realized spectrally broadband emission with an output power of 110mW and a coherence length of only 120μm.
Abstract: The authors demonstrate within a metrology experiment the applicability of a recently proposed temporally incoherent semiconductor laser source which relies on nonlinear dynamics. The realized spectrally broadband emission with an output power of 110mW and a coherence length of only 120μm is used in a rainbow refractometry experiment for sizing of liquid droplets, representing an important problem in industrial processes. The observed emission characteristics are attractive for implementation of modern imaging and metrology techniques which are based on the properties of well-directed, temporally incoherent light.
32 citations
22 Aug 2013
TL;DR: The vertical-cavity surface-emitting laser (VCSEL) physics and the progress of technology covering the spectral band from infrared to ultraviolet is reviewed by featuring materials and fabrication technology.
Abstract: The vertical-cavity surface-emitting laser (VCSEL) is becoming a key device in high-speed optical local area networks (LANs) and even wide-area networks (WANs). This device is also enabling ultraparallel data transfer in equipment and computer systems, including storage area networks (SANs) and wide optoelectronics fields. In this paper, we will review its physics and the progress of technology covering the spectral band from infrared to ultraviolet by featuring materials and fabrication technology. Performances such as threshold, output power, polarization, modulation, and reliability are introduced. Last, we will touch on its future prospects.
32 citations
PARC1
TL;DR: In this article, the authors present design criteria for real-refractive-index phased-array semiconductor diode lasers which radiate in a single narrow far-field lobe, and an example of such an array is included.
Abstract: We present design criteria for real-refractive-index phased-array semiconductor diode lasers which radiate in a single narrow far-field lobe. An example of such an array is included.
32 citations
TL;DR: An analysis of the passively mode locked regime in semiconductor lasers is presented, leading to an explicit expression relating the timing jitter diffusion constant to the optical linewidths in these devices.
Abstract: An analysis of the passively mode locked regime in semiconductor lasers is presented, leading to an explicit expression relating the timing jitter diffusion constant to the optical linewidths in these devices. Experimental results for single section quantum-dash based lasers validating the theoretical analysis are presented for the first time. Timing jitter of mode locked lasers at rates of up to 130 GHz has been experimentally estimated from the optical spectra without requiring fast photodetection.
32 citations