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Semiconductor optical gain

About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, a cleaved-coupled-cavity InGaAsP laser operating at 1.3 µm is shown to exhibit bistability when both sections operate in the above-threshold regime.
Abstract: Coupled‐cavity semiconductor lasers are shown to exhibit bistability when both sections operate in the above‐threshold regime. The hysteresis width can be adjusted by controlling the current in the modulator section. The theoretical model is based on a set of generalized rate equations and shows that the bistable behavior is due to nonlinearities associated with above‐threshold gain saturation. Experiments are performed using a cleaved‐coupled‐cavity InGaAsP laser operating at 1.3 μm. The experimental results are in reasonable agreement with the theory.

29 citations

Proceedings ArticleDOI
22 Feb 1998
TL;DR: In this article, the first sub-nanosecond switching of a four clamped gain optical amplifiers driven by integrated InP HBT drivers is presented, which is the first time for such an array.
Abstract: Summary form only given. Recently, arrays of four clamped gain semiconductor optical amplifiers (CG-SOAs) which were fully packaged have been reported with excellent performances using bulk tensile strained active material. Here we believe we present for the first time subnanosecond switching of such a four CG-SOA array driven by integrated InP HBT drivers.

29 citations

Journal ArticleDOI
TL;DR: In this paper, the authors demonstrate theoretically and experimentally that the injection of two optical signals into a semiconductor laser can be a feasible and practical method of enhancing chaos, influencing the stability map and generating various nonlinear dynamics.

29 citations

Patent
24 Jul 1992
TL;DR: In this paper, an integrated semiconductor laser array (ILSA) is proposed to stabilize the light output from each individual semiconductor element. But it does not have the ability to control the bias current of the laser array.
Abstract: An integrated semiconductor laser array apparatus which is simple in structure and yet capable of stabilizing the light output from each individual semiconductor laser element. The integrated semiconductor laser array apparatus includes a semiconductor laser array provided by integrating a plurality of semiconductor laser elements. The semiconductor laser array includes a master semiconductor laser element selected from the plurality of semiconductor laser elements and slave semiconductor laser elements constituted of the remaining semiconductor laser elements. A laser beam output from the master semiconductor laser element is sensed by a photodiode and thereby a photocurrent corresponding to the received light ,intensity is generated and the bias current for the master semiconductor laser element is controlled by a first bias current control circuit such that the generated photocurrent is kept constant. The bias current for each of the slave semiconductor laser elements is controlled by a second bias current control circuit depending on the output from the First bias current control circuit such that the ratio between the bias current for the master semiconductor laser element, and the bias current for each of the plurality of slave semiconductor laser elements is kept constant.

29 citations

Journal ArticleDOI
TL;DR: In this paper, the magnitude of threshold reduction in a semiconductor laser with electron spin injection is shown to depend on such intrinsic properties of the active region as the dominant recombination mechanism, the ratio of hole-to-electron densities of states, the active-region doping, and the available material gain as well as cavity properties such as the optical loss.
Abstract: The magnitude of threshold reduction in a semiconductor laser with electron spin injection is shown to depend on such intrinsic properties of the active region as the dominant recombination mechanism, the ratio of hole-to-electron densities of states, the active-region doping, and the available material gain as well as cavity properties such as the optical loss. The threshold reduction is expected to be greatest when the laser’s active region is undoped, the recombination is strongly dominated by Auger processes, and the threshold gain is low. It can approach a factor of 3.5 for fully spin-polarized electrons in the active region.

29 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20233
20229
20211
20201
20187
201789