Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
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Patent•
08 May 1991TL;DR: In this article, a modelocking of a solid state laser is achieved by employing an external cavity defined by spatially separated reflective elements, where at least one of the reflective elements exhibits a nonlinear characteristic in response to an impinging light beam.
Abstract: Modelocking of a solid state laser such as a Ti:Al₂O₃ laser (101) is achieved by employing an external cavity defined by spatially separated reflective elements (104,107) wherein at least one of the reflective elements (107) exhibits a nonlinear characteristic in response to an impinging light beam. Exemplary nonlinear reflective elements are described using bulk semiconductor material or semiconductor quantum well structures integrated with a rear reflector such as a stack of quarter-wave thick dielectric or semiconductor material. Tuning control of the nonlinear reflective element may be introduced with temperature control arrangements and with mechanical translation arrangements in conjunction with lateral band gap engineering of the semiconductor material.
26 citations
TL;DR: In this article, the authors report on lasing in rolled-up microtube resonators and observe a strong red-shift of the laser mode during the pulse emission which is compared to the time evolution of the charge-carrier density calculated by rate equations.
Abstract: We report on lasing in rolled-up microtube resonators. Time-resolved studies on these semiconductor lasers containing GaAs quantum wells as optical gain material reveal particularly fast turn-on-times and short pulse emissions above the threshold. We observe a strong red-shift of the laser mode during the pulse emission which is compared to the time evolution of the charge-carrier density calculated by rate equations.
26 citations
TL;DR: In this article, a model for predicting the longitudinal-mode spectra of semiconductor diode lasers is presented, which considers the effects of experimentally observed scattering, which exists in or near the active region.
Abstract: A model for predicting the longitudinal-mode spectra of semiconductor diode lasers is presented. The model considers the effects of experimentally observed scattering, which exists in or near the active region. By changing the amount of scattered light and the location of the scattering center, one can predict theoretical longitudinal-mode spectra to be multimode, single mode, asymmetric, or double gain peak. Thus the model, coupled with the observed scattering properties of index-guided and gain-guided lasers, provides an explanation of why gain-guided lasers tend to operate more multilongitudinal-mode than do index-guided lasers.
26 citations
TL;DR: In this article, a novel method of pulse-amplitude equalization in a rational harmonic mode-locked semiconductor ring laser is proposed and experimentally demonstrated, where the SOA gain is equalized from pulse to pulse because the feedback optical pulse circulates inside the ring cavity.
26 citations
Patent•
17 Feb 2009TL;DR: In this paper, a semiconductor surface emitting optical amplifier chip utilizes a zigzag optical path within an optical amplifier, which couples two or more gain elements and is used as a superluminescent LED.
Abstract: A semiconductor surface emitting optical amplifier chip utilizes a zigzag optical path within an optical amplifier chip. The zigzag optical path couples two or more gain elements. Each individual gain element has a circular aperture and includes a gain region and at least one distributed Bragg reflector. In one implementation the optical amplifier chip includes at least two gain elements that are spaced apart and have a fill factor no greater than 0.5. As a result the total optical gain may be increased. The optical amplifier chip may be operated as a superluminescent LED. Alternately, the optical amplifier chip may be used with external optical elements to form an extended cavity laser. Individual gain elements may be operated in a reverse biased mode to support gain-switching or mode-locking.
26 citations