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Semiconductor optical gain

About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.


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Journal ArticleDOI
TL;DR: In this article, it was shown that the population of wetting-layer states leads to saturation of the population inversion in dot states and hence to the saturation of gain in a quantum-dot laser.
Abstract: Using experimental measurements of the gain–current characteristic as a function of temperature in InGaAs quantum-dot lasers, we demonstrate that it is the population of wetting-layer states that leads to a saturation of the population inversion in dot states and hence to the saturation of gain in a quantum-dot laser. At 300 K, the maximum modal gain for a three-layer structure is reduced from 53 to 14 cm−1.

158 citations

Journal ArticleDOI
D. Renner1
TL;DR: In this paper, a monocrystalline indium phosphide substrate of a predetermined conductivity type is used for a semiconductor laser, where a wide range of laser emission wavelengths can be obtained by varying the composition of monocrystaline alloys employed as semiconductor material.
Abstract: A semiconductor laser wherein a wide range of laser emission wavelengths can be obtained by varying the composition of monocrystalline alloys employed as semiconductor material. The semiconductor structure comprises on a monocrystalline indium phosphide substrate of a predetermined conductivity type successive epitaxial layers consisting of a first confinement layer of the same conductivity type, an active layer having the formula (Gax Al1-x)0.47 In0.53 As where x is within the range of 0 to 0.27, and a second confinement layer of opposite conductivity type. The confinement layers are composed of either InP or a ternary alloy Al0.47 In0.53 As or a quaternary alloy Gax' Al1-x' Asy' Sb1-y' where x' and y' are chosen so that the material should have a predetermined crystal lattice and an energy gap of greater width than the substrate material.

158 citations

Journal ArticleDOI
TL;DR: In this article, a model of an unlocked, optically injected laser was proposed to describe the observed spectral characteristics and their dependence on the intrinsic parameters of the semiconductor laser, which is used to develop a simple and accurate technique using a single experimental setup for the parasitic-free characterization of the intrinsic laser parameters.
Abstract: There is a direct connection between nearly degenerate four-wave mixing in a semiconductor laser and optical modulation in the laser field. It can be understood using a model of an unlocked, optically injected laser, which emphasizes the effect of the laser resonator on the optical interactions. This model correctly describes the observed spectral characteristics and their dependence on the intrinsic parameters of the semiconductor laser. This is used to develop a simple and accurate technique using a single experimental setup for the parasitic-free characterization of the intrinsic laser parameters, including the relaxation resonance frequency, the total relaxation rate, the nonlinear relaxation rate, and the linewidth enhancement factor. Other parameters, such as the spontaneous carrier lifetime, the photon lifetime, the differential and nonlinear gain parameters, and the K factor, are determined from the power dependencies of these parameters. This technique requires only two CW lasers closely matched in wavelength and is applicable to semiconductor lasers of any wavelength and any dynamic bandwidth. >

157 citations

Journal ArticleDOI
TL;DR: In this article, a simple model for the linewidth enhancement factor α and its frequency dependence in semiconductor lasers is presented, which is in reasonable agreement with the experimental results.
Abstract: A simple model for the linewidth enhancement factor α and its frequency dependence in semiconductor lasers is presented. Calculations based on this model are in reasonable agreement with experimental results.

155 citations

Journal ArticleDOI
TL;DR: In this article, a simple model for carrier heating in semiconductor lasers from which the temperature dynamics of the electron and hole distributions can be calculated is presented and analytical expressions for two new contributions to the nonlinear gain coefficient, in are derived, which reflect carrier heating due to stimulated emission and free carrier absorption.
Abstract: A simple model is presented for carrier heating in semiconductor lasers from which the temperature dynamics of the electron and hole distributions can be calculated. Analytical expressions for two new contributions to the nonlinear gain coefficient, in are derived, which reflect carrier heating due to stimulated emission and free carrier absorption. In typical cases, carrier heating and spectral holeburning are found to give comparable contributions to nonlinear gain suppression. The results are in good agreement with recent measurements on InGaAsP laser diodes. >

154 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20233
20229
20211
20201
20187
201789