Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
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TL;DR: Different periodic, quasiperiodic, chaotic, and steady-state regimes form Arnold's tongues in bi-dimensional parameter spaces of the length and feedback strengths of the external cavities and the pump parameter, which gives additional possibility for controlling complex dynamics and chaos in a semiconductor laser with external Cavities by properly adjusting their lengths and feedback strength.
Abstract: Phase-locked solutions are found numerically in a semiconductor laser with one and two external cavities. Different periodic, quasiperiodic, chaotic, and steady-state regimes form Arnold’s tongues in bi-dimensional parameter spaces of the length and feedback strengths of the external cavities and the pump parameter. This rich structure gives additional possibility for controlling complex dynamics and chaos in a semiconductor laser with external cavities by properly adjusting their lengths and feedback strengths.
26 citations
TL;DR: In this article, a tailored gain broad area laser 60 μm wide which emits 450 mW per mirror into a stable, single-lobed far field pattern 3 1/2° wide at 5.3 Ith.
Abstract: We show that by employing gain tailoring in a broad area semiconductor laser we achieve fundamental lateral mode operation with a diffraction‐limited single‐lobed far‐field pattern. We demonstrate a tailored gain broad area laser 60 μm wide which emits 450 mW per mirror into a stable, single‐lobed far‐field pattern 3 1/2° wide at 5.3 Ith.
26 citations
TL;DR: In this paper, a 1 GHz hybrid mode-locked monolithic semiconductor laser fabricated on indium phosphide was demonstrated and its operating regimes were explored and optical pulses as short as 36 ps were measured.
Abstract: This letter demonstrates a 1-GHz hybrid mode-locked monolithic semiconductor laser fabricated on indium phosphide. Its operating regimes are explored and optical pulses as short as 36 ps were measured. The linear cavity is 41 mm long with integrated active quantum well and passive waveguide structures. To our knowledge, this is the lowest reported repetition rate for a monolithically integrated mode-locked semiconductor laser. We further describe optimization steps of the saturable absorber reverse bias, driving RF frequency, and the semiconductor optical amplifier gain current for minimal output pulsewidth.
26 citations
TL;DR: Investigation of lasing from high-Q, polymeric goblet-type microcavities covered by an organic semiconductor gain layer shows reduced lasing thresholds for increasing gain layer thicknesses, which can be explained by a higher filling factor of the optical modes in the gain layer.
Abstract: We investigate lasing from high-Q, polymeric goblet-type microcavities covered by an organic semiconductor gain layer. We analyze the optical modes in the high-Q cavities using finite element simulations and present a numerical method to determine the cutoff thickness of the gain layer above which the whispering gallery modes are strongly confined in this layer. Fabricated devices show reduced lasing thresholds for increasing gain layer thicknesses, which can be explained by a higher filling factor of the optical modes in the gain layer. Furthermore, reduced lasing threshold is accompanied by a red-shift of the laser emission.
26 citations
TL;DR: In this paper, a tunable vertical-cavity surface-emitting laser is fabricated where tunability is achieved with an intracavity layer of nematic liquid crystal and gain is provided by a semiconductor quantum well structure.
Abstract: A tunable vertical-cavity surface-emitting laser is fabricated where tunability is achieved with an intracavity layer of nematic liquid crystal and gain is provided by a semiconductor quantum well structure. The anisotropic liquid crystal layer enables a continuously tunable single-mode emission along the extraordinary axis of the layer. Polarization control is achieved when the layer thickness is such that the ordinary modes are out of the spectral gain region. Laser emission in the 1.5μm telecom wavelength range is demonstrated under optical pumping with a tuning range of more than 30 nm for an applied voltage of less than 3 V.
26 citations