Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this paper, a dual pump configuration where wavelength conversion is achieved by shifting one of the pumps was proposed, and a very high conversion efficiency (6.5 dB for 23.4 nm down-wavelength shift and 4.5dB for 16 nm up-wave shift) was reported, using four-wave mixing in a bulk semiconductor optical amplifier.
Abstract: Very high conversion efficiency (6.5 dB for 23.4 nm down-wavelength shift and 4.5 dB for 16 nm up-wavelength shift) is reported, using four-wave mixing in a bulk semiconductor optical amplifier. Based on a dual pump configuration where wavelength conversion is achieved by shifting one of the pumps, superior performance has been achieved in terms of both efficiency and the converted signal-to-background amplified spontaneous emission noise ratio, especially for very large wavelength shifts. Simple theoretical considerations are also discussed for the explanation of the improved performance of the converter.
26 citations
TL;DR: In this article, it was shown that optical amplifiers with type-II quantum-well active regions in SOAs will have up to 10 dB lower interchannel crosstalk at high data rates.
Abstract: It is shown theoretically that semiconductor optical amplifiers (SOAs) with type-II quantum-well active regions in SOAs will have up to 10 dB lower interchannel crosstalk at high (>2.5 Gb/s) data rates. That reduction is attained via the corresponding increase in saturation energy without any reduction in the efficiency.
26 citations
Patent•
22 Aug 1988TL;DR: In this article, a spatial light modulator is used to transfer electrical data into an optical form and then employs the photorefractive effect in the bulk for processing the data, which can be used for optical information processing, matrix multiplication, and integrated semiconductor optical information processors.
Abstract: Optical processing using photorefractive GaAs and other compound semiconductor crystals (28) is achieved in a four-wave mixing configuration. Potential applications of optical processing include spatial light modulation, phase conjugation, correlation, convolution, edge enhancement, matrix multiplication, incoherent-to-coherent conversion, and many others. In particular embodiments, optical processing, matrix multiplication, and integrated semiconductor optical information processors are demonstrated. In the case of integration of semiconductors and optical information processors, a spatial light modulator (88) is fabricated on a surface of a compound semiconductor crystal to form an integrated device (86). The device uses the spatial light modulator to transfer electrical data into an optical form and then employs the photorefractive effect in the bulk for processing the data.
26 citations
19 Jun 1995
TL;DR: In this paper, the gain dynamics of bulk laser amplifiers are discussed on the basis of simple rate equations, and comparison is made with experimental pump-and-probe measurements employing ultrashort optical pulses.
Abstract: The gain dynamics of bulk laser amplifiers is discussed on the basis of simple rate equations, and comparison is made with experimental pump-and-probe measurements employing ultrashort optical pulses. The rate equation model is derived from semi-classical density matrix equations, and is analyzed in different limiting cases, i.e., an adiabatic limit corresponding to nonlinear gain in laser diodes, a small-signal limit yielding an analytical repsonse function, and a strong-signal regime, where numerical simulations are carried out.
26 citations
TL;DR: In this article, the control of spatio-temporal dynamics in broad-area semiconductor laser is investigated numerically under the condition of strong optical injection, where the laser oscillates with a regular structure in the time-resolved near-field pattern.
Abstract: Control of spatio-temporal dynamics in broad-area semiconductor lasers is investigated numerically under the condition of strong optical injection. Irregular filamentation of the laser emissions are considerably suppressed as the optical injection ratio is increased. At high optical injections ratios, the laser oscillates with a regular structure in the time-resolved near-field pattern. At the same time, the time-averaged near-field pattern at the exit facet exhibits a good top-hat distribution.
26 citations