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Semiconductor optical gain

About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, the first optical gain measurements on InGaAsP/InP double heterostructures with composition corresponding to an emission wavelength of about 1.3 μm at 300 K were reported.
Abstract: We report the first optical gain measurements on InGaAsP/ InP double heterostructures with composition corresponding to an emission wavelength of about 1.3 μm at 300 K. At optical pumping levels of about 1 MW/cm2the maximum gain values of the best samples available are 800 cm-1at 2 K, 500 cm-1at 77 K, and 200 cm-1at 300 K. We conclude from low-intensity luminescence and absorption spectra, that the laser transition corresponds to free-carrier recombination between band-tail states, which are present even in not intentionally doped material. Although these tail states result in rather broad low-intensity luminescence, narrow gain spectra comparable to those of GaAs/GaAlAs double heterostructures are obtained.

26 citations

Patent
21 Oct 1993
TL;DR: In this article, a method for optically reading recorded information by radiating laser light emitted from a semiconductor laser which oscillates in a single longitudinal mode to an information recording medium and by detecting laser light reflected from a recording face of the information record medium is disclosed.
Abstract: A method for optically reading recorded information by radiating laser light emitted from a semiconductor laser which oscillates in a single longitudinal mode to an information recording medium and by detecting laser light reflected from a recording face of the information recording medium is disclosed. In the method, the optical frequency of the laser light is modulated in order that the modulated optical frequency is a periodic function dependent on time, and the absolute value of a time differential coefficient R (Hz/s) of the periodic function, a spectral line width δ ν (Hz) of the laser light, and a time period τ (s) from the time when the laser light is emitted to the time when the laser light reflected from the recording face of the information recording medium reaches the semiconductor laser satisfy the condition of R≧δ ν/τ. The periodic function varies to have a sawtooth waveform or a triangular waveform.

26 citations

Patent
22 Mar 1999
TL;DR: A tunable-gain lasing semiconductor optical amplifier comprises a vertical-lasing optical amplifier that includes a tunable region which allows the gain of the optical amplifier to be tuned.
Abstract: A tunable-gain lasing semiconductor optical amplifier comprises a vertical-lasing semiconductor optical amplifier that includes a tunable region which allows the gain of the vertical-lasing semiconductor optical amplifier to be tuned. The tunable region comprises a region whose loss and/or phase may be tuned by adjusting a physical characteristic of the region. For example, the region may comprise a liquid crystal layer whose transmissivity may be adjusted by applying different voltages across the layer to adjust the reflectivity of a cavity mirror, or a cavity mirror whose reflectivity may be adjusted by ion implantation. In an alternative embodiment of this invention, the tunable-gain lasing semiconductor optical amplifier comprises a tunable loss element in series after the gain-clamped semiconductor optical amplifier.

26 citations

Journal ArticleDOI
TL;DR: In this article, the steady state and transient properties of polarization-bistable semiconductor lasers are investigated, both experimentally and theoretically, and an analysis based on coupled rate equations for a two-mode system with unequal gain/current characteristics is presented.
Abstract: The steady-state and transient properties of polarization-bistable semiconductor lasers are investigated, both experimentally and theoretically. An analysis based on coupled rate equations for a two-mode system with unequal gain/current characteristics is presented. The simple rate-equation model explains the general features of the observed bistable-switching behaviour. The condition for the existence of polarization bistability is determined using laser parameters.

26 citations

Journal ArticleDOI
TL;DR: This work reports on directional mode switching in semiconductor ring lasers through optical injection co-propagating with the lasing mode through the particular structure of a two-dimensional asymptotic phase space.
Abstract: We report on directional mode switching in semiconductor ring lasers through optical injection co-propagating with the lasing mode. The understanding of this novel feature in ring lasers is based on the particular structure of a two-dimensional asymptotic phase space. Our theoretical results are verified numerically and experimentally.

26 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20233
20229
20211
20201
20187
201789