Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
Papers published on a yearly basis
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TL;DR: In this article, the emission properties of concentric circle grating, surface-emitting (CCGSE), distributed-feedback semiconductor lasers oscillating in single high-order azimuthal spatial modes are investigated.
Abstract: We report the emission properties of concentric-circle-grating, surface-emitting (CCGSE), distributed-feedback semiconductor lasers oscillating in single high-order azimuthal spatial modes. The evolution of the spatial profile of the beam emitted by such lasers with increasing excitation depends upon the spatial gain distribution and the depth of the circular waveguide grating. The polarization of the high-order spatial modes is predominantly radial.
26 citations
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01 Apr 1971TL;DR: In this article, the theory of the molecular hydrogen laser is presented and the operation of the device to generate a fast-rising current pulse which travels down the discharge channel at the velocity of light is described.
Abstract: A unique gas laser system suitable for achieving more than a 100-kW peak power in the vacuum ultraviolet spectral region near 1600 A is described. First, the theory of the molecular hydrogen laser is presented. The novel operation of the device to generate a fast-rising current pulse which travels down the discharge channel at the velocity of light is described. Finally, the experimental verification of lasing and further characteristics of the device are given.
26 citations
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TL;DR: In this paper, a model of a singlemode Fabry-Perot semiconductor laser that predicts laser performance in analog transmission has been developed based on a time domain simulation of the rate equations for a semiconductor LM.
Abstract: A model of a single-mode Fabry-Perot semiconductor laser that predicts laser performance in analog transmission has been developed. The model is based on a time domain simulation of the rate equations for a semiconductor laser. The model can be used to simulate laser characteristics such as light versus current, step response, harmonic and intermodulation distortion. Simulated distortion results agree with experimentally measured results. >
25 citations
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TL;DR: In this article, an optical control of the stimulated emission of a vertical cavity surface emitting laser (VCSEL) by an intra-cavity coupled in-plane laser is reported.
Abstract: We report the observation of optical control of the stimulated emission of a vertical cavity surface emitting laser (VCSEL) by an intra‐cavity coupled in‐plane laser. Depending on the overlap between the two gain regions, greater than 70% change in threshold current to complete quenching of the VCSEL, is observed. The combined device offers a wide variety of potential applications for integrated, all‐optical logic devices and optical interconnects between signal planes.
25 citations
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01 Jan 2002
TL;DR: In this article, the state-of-the-art of GaAs-based quantum cascade laser is presented, with peak power in excess of 1 W at 77 K, in the 8-13 μm wavelength region.
Abstract: Quantum engineering of the electronic energy levels and tailoring of the wavefunctions in GaAs/AlxGa1−xAs heterostructures allows to obtain the correct matrix elements and scattering rates which enable laser action between subbands This article reviews the state-of-the-art of GaAs based quantum cascade lasers These new light sources operate, with peak power in excess of 1 W at 77 K, in the 8–13 μm wavelength region, greatly extending the wavelength range of GaAs optoelectronic technology Waveguides are based on an Al-free design with an appropriate doping profile which allows optical confinement, low losses and optimal heat dissipation Finally, new active region designs aiming to improve the laser temperature dependence are discussed Recent results on these devices confirm that the ratio between the conduction band discontinuity and the photon energy (∆Ec/Elaser) is the dominant parameter controlling their thermal characteristic The maximum operating temperature of these devices is 280 K for lasers with emission wavelength at ∼11 μm
25 citations