Semiconductor optical gain

About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.

Laser emission from photonic dots

Abstract: Laser emission was observed in photonic semiconductor dots with a discretized optical mode spectrum. The photonic dots with lateral sizes between 1 and 5 μm provide a three-dimensional optical confinement by using in the vertical direction AlAs/GaAs Bragg mirrors and in the lateral directions the refractive index discontinuity at the etched surfaces. In the optically pumped structures, the laser emission takes place on the fundamental mode of the microcavities. External threshold excitation densities of 200 W/cm2, which correspond to a very low internal optical excitation power of 0.15 μW per microcavity post, were measured for microcavity structures with a lateral size of 2.7 μm.

Localized traveling waves in vertical-cavity surface-emitting lasers with frequency-selective optical feedback.

Abstract: Spatially self-localized states have been found in a model of vertical-cavity surface-emitting lasers with frequency-selective optical feedback. The structures obtained differ from most known dissipative solitons in optics in that they are localized traveling waves. The results suggest a route to realization of a cavity soliton laser using standard semiconductor laser designs.

Semiconductor devices incorporating multilayer interference regions

Abstract: A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

Optical phase conjugation technique using four-wave mixing in semiconductor optical amplifier

Abstract: A semiconductor-optical-amplifier-based technique to generate the conjugate of an optical signal is presented. The original probe signal and its conjugate appear at opposite ends of the semiconductor optical amplifier, improving, therefore, existing techniques. The basic concept was proposed many years ago but, to the best of our knowledge, has never been experimentally verified. An explanation is given as to why this was not possible, what modifications render the idea practical are explained and experimental results that prove its feasibility are shown.

Mode-locking of monolithic laser diodes incorporating coupled-resonator optical waveguides.

Abstract: We investigate the operational principle of mode-locking in monolithic semiconductor lasers incorporating coupled-resonator optical waveguides. The size of mode-locked lasers operating at tens of GHz repetition frequencies can be drastically reduced owing to the significantly decreased group velocity of light. The dynamics of such devices are analyzed numerically based on a coupled-oscillator model with the gain, loss, spontaneous emission, nearest-neighbor coupling and amplitude phase coupling (as described by the linewidth enhancement factor alpha) taken into account. It is demonstrated that active mode-locking can be achieved for moderate alpha parameter values. Simulations also indicate that large alpha parameters may destabilize the mode-locking behavior and result in irregular pulsations, which nevertheless can be effectively suppressed by incorporating detuning of individual cavity resonant frequencies in the device design.