Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
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TL;DR: An experimental demonstration of optical synchronization of chaotic external-cavity semiconductor laser diodes is reported for what is believed to be the first time.
Abstract: An experimental demonstration of optical synchronization of chaotic external-cavity semiconductor laser diodes is reported for what is believed to be the first time. It is shown that at an optimum coupling strength between the master and the slave lasers high-quality synchronization can be obtained.
146 citations
TL;DR: In this paper, the effect of carrier heating and spectral-hole burning on the amplification of picosecond pulses in a semiconductor optical amplifier was studied, and an analytical expression for the amplifier output was derived for a given bit-width input, where the critical pulse width ranges from a few seconds to 20 ps in most cases.
Abstract: We study the amplification of picosecond pulses in a semiconductor optical amplifier, including the effect of carrier heating and spectral-hole burning. Under simplifying approximations we obtain an analytical expression for the amplifier output to a given picosecond pulse input. The effect of the intraband dynamics becomes important for pulses below a critical pulse width that is related to the K factor that characterizes the modulation properties of semiconductor lasers. The critical pulse width ranges from a few picoseconds to 20 ps in most cases.
145 citations
TL;DR: In this paper, a surface-emitting semiconductor laser structure with a vertical cavity, extremely short gain medium length, and enhanced gain at a specific design wavelength is described, where the active region consists of a series of quantum wells spaced at one half the wavelength of a particular optical transition in the quantum wells.
Abstract: A surface-emitting semiconductor laser structure with a vertical cavity, extremely short gain medium length, and enhanced gain at a specific design wavelength is described. The active region consists of a series of quantum wells spaced at one half the wavelength of a particular optical transition in the quantum wells. This special periodicity allows the antinodes of the standing-wave optical field to coincide with the gain elements, enhancing the frequency selectivity, increasing the gain in the vertical direction by a factor of two compared to a uniform medium or a nonresonant multiple quantum well, and substantially reducing amplified spontaneous emission. Optically pumped lasing was achieved in a GaAs/AlGaAs structure grown by molecular-beam epitaxy, with what is believed to be the shortest gain medium (310 nm) ever reported. >
145 citations
Patent•
10 Jan 2008
TL;DR: In this paper, a semiconductor optical amplifier (SOA) in a laser ring is chosen to provide low polarization-dependent gain (PDG) and a booster SOA, outside of the ring, is selected to provide high PEG.
Abstract: In one embodiment of the invention, a semiconductor optical amplifier (SOA) in a laser ring is chosen to provide low polarization-dependent gain (PDG) and a booster semiconductor optical amplifier, outside of the ring, is chosen to provide high polarization-dependent gain. The use of a semiconductor optical amplifier with low polarization-dependent gain nearly eliminates variations in the polarization state of the light at the output of the laser, but does not eliminate the intra-sweep variations in the polarization state at the output of the laser, which can degrade the performance of the SS-OCT system.
143 citations
TL;DR: In this article, a systematic map of the various instabilities induced in a semiconductor laser subject to strong optical injection as the amount of optical injection power and frequency detuning is varied is presented.
Abstract: We have experimentally obtained and theoretically analyzed a systematic map of the various instabilities induced in a semiconductor laser subject to strong optical injection as the amount of optical injection power and frequency detuning is varied. Two distinct islands of chaos have been identified in the injection‐locked region. They are separated by regions of period one and period two solutions. Spontaneous emission noise obscures the observation of high periodic orbits.
142 citations