Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
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TL;DR: A phase space reconstruction of the trajectory for the optimal path of motion illustrates sudden shifts between low-dimensional attractor ruins and is shown to correspond to simulations of the laser intensity and carrier number.
Abstract: We report a direct experimental observation of chaotic itinerancy in simultaneous measurements of the light intensity and voltage fluctuations of a laser diode exhibiting low-frequency fluctuations. The distribution of trajectories leading up to (following) an intensity dropout is computed from the experiment and reveals the presence of itinerant mechanisms before (after) dropout initiation. A phase space reconstruction of the trajectory for the optimal path of motion illustrates sudden shifts between low-dimensional attractor ruins and is shown to correspond to simulations of the laser intensity and carrier number.
24 citations
TL;DR: In this paper, the non-Markovian optical gain of a semiconductor laser is derived from recently developed time convolutionless (TCL) quantum kinetic equations for electron-hole pairs, including the many body effects.
Abstract: In this paper, non-Markovian optical gain of a semiconductor laser is derived from recently developed time convolutionless (TCL) quantum kinetic equations for electron-hole pairs, including the many body effects. Plasma screening and excitonic effects are taken into account using an effective Hamiltonian in the time-dependent Hartree-Fock approximation. To calculate the optical gain, equation of motion for the interband pair amplitude is integrated directly. It is shown that the line shape of optical gain spectra is Gaussian for the simplest, non-Markovian quantum kinetics, and the optical gain is enhanced by the excitonic effects caused by the attractive electron-hole Coulomb interaction and the interference effects (renormalized memory effects) between the external driving field and the stochastic reservoir of the system. Enhancement of optical gain by the memory effects suggests the violation of strict energy conservation on a very short time scale, as compared with the correlation time of the system governed by non-Markovian quantum kinetics. >
24 citations
Patent•
24 May 2000
TL;DR: A W quantum well structure for active region of semiconductor lasers for long wavelength emission of photons was proposed in this article. But the structure was not applied to any semiconductor laser including a vertical cavity surface emitting laser.
Abstract: A W quantum well structure for active region of semiconductor lasers for long wavelength emission of photons. The energy band lineups in the disclosed heterostructures achieve emission at wavelengths of 1.3 micron or greater. The W quantum well structure and exemplary materials can be applied to any semiconductor laser including a vertical cavity surface emitting laser (VCSEL) (100). The active region (106) is comprised of one or more sets of triad layers of GaAs1-xNx / GaAs1-ySby / GaAs1-xNx to provide the W quantum well structure. The energy band of these materials provides a staggered band alignment which causes electrons and holes to be confined in adjacent layers to one another. Because the wavefunctions associated with these materials tunnel into adjacent layers, optical emission at a longer wavelength is achievable than otherwise available from the energy gaps of the constituent materials alone.
24 citations
TL;DR: In this article, the authors studied the dynamics of a passively mode-locked semiconductor laser with dual-frequency coherent optical injection, where the laser pulse repetition rate is synchronized to the separation of the two injected frequencies.
Abstract: In this paper, we study the dynamics of a passively mode-locked semiconductor laser with dual-frequency coherent optical injection. The locking regions, where the laser pulse repetition rate is synchronized to the separation of the two injected frequencies, were calculated numerically using a delay differential equation model and measured experimentally. Asymptotic analysis performed in the limit of the small injection field amplitude revealed the dependence of the locking regions on the model parameters, such as optical bandwidth, absorber recovery time, and linear losses.
24 citations
TL;DR: In this paper, the formation of a strong pulse asymmetry in mode-locked quantum-dot edge-emitting two-section semiconductor lasers is described, and a mode decomposition technique reveals the role of the superposition of different modal groups.
Abstract: We describe the formation of a strong pulse asymmetry in mode-locked quantum-dot edge-emitting two-section semiconductor lasers. A mode decomposition technique reveals the role of the superposition of different modal groups. The results of theoretical analysis are supported by the experimental data.
24 citations