Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this paper, the saturation behavior of the spontaneous emission intensity from a transverse mode stabilized (GaAl)As laser was studied and the spatial hole burning was observed from the top surface of the laser.
Abstract: The saturation behavior of the spontaneous emission intensity from a transverse‐mode stabilized (GaAl)As laser is studied. The spatial hole burning is observed from the top surface of the laser, and a complete gain saturation is confirmed to occur in the lasing region.
23 citations
Patent•
08 Dec 1997
TL;DR: In this paper, a modification process of formation of microscopic clusters (quantum dots) in a semiconductor material and changing refractive index in the near surface region of the material is used for improving performance of different semiconductor light emitting devices.
Abstract: A modification process of formation of microscopic clusters (quantum dots) in a semiconductor material and changing refractive index in the near-surface region of the material is used for improving performance of different semiconductor light emitting devices. The clusters formation directly in an active region of a semiconductor laser diode results in increasing its power, slope efficiency and decreasing threshold current. Changing the refractive index distribution along active and passive regions of the semiconductor material enables fabrication of uniform or non-uniform waveguide structures along a laser diode cavity and optical isolation of individual emitters in a laser diode array. Modification of the refractive index in the vicinity of laser mirrors allows efficient control of reflection from laser mirrors. The modification can be used instead of mirror coating resulting in considerable increasing the laser diode power and decreasing threshold current. Enhancement of the third order nonlinearity in a semiconductor material after its modification is useful for performing different all-optical functions. The method can be applied to many semiconductor based active and passive integrated optical and photonic devices, including diode lasers, diode laser bars and arrays, vertical cavity surface emitting lasers (VCSELs), and light emitting diodes. It is useful in all applications where highly efficient diode lasers are required, including high-power laser diode systems for pumping solid state lasers, industrial cutting and welding and different medical procedures.
23 citations
TL;DR: In this article, a simple three-mirror composite laser cavity is analyzed and optimum structures proposed in terms of the position of the central reflector and the value of its reflectivity in order to give single longitudinal mode operation.
Abstract: A simple three-mirror composite laser cavity is analyzed and optimum structures proposed in terms of the position of the central reflector and the value of its reflectivity in order to give single longitudinal mode operation. Two optimum structures are discussed, the first corresponding to relatively long cavities where a large period in the gain modulation is required in order to avoid a jump to the next mode with a high effective reflectivity, usually in a second mode group (as defined by a neighboring period of the gain modulation). The second corresponds to shorter lasers where jumps to neighboring modes should be avoided, since the spectral gain variation prevents jumps to other mode groups. The effects of mode discrimination due to external feedback have been analyzed and minimum values of reflectivity for the third mirror derived in order to preserve the internal mode selectivity.
23 citations
TL;DR: In this paper, the uniformity improvement of InAs quantum dashes (QDHs) grown by molecular beam epitaxy on InP (100) through optimizing double cap technique was reported.
Abstract: We report on the uniformity improvement of InAs quantum dashes (QDHs) grown by molecular beam epitaxy on InP (100) through optimizing double cap technique. Broad-area lasers were fabricated with an emission wavelength of 1.58 μm. A threshold current density of 360 A/cm2 was achieved for a five stack QDH structure and a cavity length of 1.2 mm. This results from a reduced inhomogeneous broadening (62 meV) and lower internal optical losses (7 cm−1). The achievement paves the way toward ultralow threshold semiconductor laser for telecommunications.
23 citations
TL;DR: In this paper, the nonlinear dynamics for microdisk laser subject to optical injection is investigated for potential applications including photonic microwave generation and improved modulation characteristics, and the results reveal the necessity of further explore toward the potential applications of microdisk lasers under optical injection in photonic integrated chip.
Abstract: The whispering-gallery mode microlasers with the merits of small size and low power consumption are suitable for chip-based photonic integration. In this paper, the nonlinear dynamics for microdisk laser subject to optical injection is investigated for potential applications including photonic microwave generation and improved modulation characteristics. The four-wave mixing, period-one and period-two oscillations, and optical injection locking states are investigated based on the lasing spectra and generated microwave for a 10-μm-radius directional emission microdisk laser. Furthermore, direct modulation bandwidth enhancement from 5.6 to 17.6 GHz is observed for the injection-locked microdisk laser biased at 7 mA. The results reveal the necessity of further explore toward the potential applications of microdisk lasers under optical injection in photonic integrated chip.
23 citations