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Semiconductor optical gain

About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, the authors demonstrate improvement of the noise performance of a model-ocked semiconductor laser using coherent photon seeding, and show that the timing jitter can be reduced without increasing the pulse width.
Abstract: We demonstrate improvement of the noise performance of a modelocked semiconductor laser using coherent photon seeding. We show that the timing jitter can be reduced without increasing the pulse width.

22 citations

Journal ArticleDOI
TL;DR: In this article, a detailed model for semiconductor linear optical amplifiers (LOAs) with gain clamping by a vertical laser field is presented, which accounts the carrier and photon density distribution in the longitudinal direction as well as the facet reflectivity.
Abstract: A detailed model for semiconductor linear optical amplifiers (LOAs) with gain clamping by a vertical laser field is presented, which accounts the carrier and photon density distribution in the longitudinal direction as well as the facet reflectivity. The photon iterative method is used in the simulation with output amplified spontaneous emission spectrum in the wide band as iterative variables. The gain saturation behaviors and the noise figure are numerically simulated, and the variation of longitudinal carrier density with the input power is presented which is associated with the on-off state of the vertical lasers. The results show that the LOA can have a gain spectrum clamped in a wide wavelength range and have almost the same value of noise figure as that of conventional semiconductor optical amplifiers (SOAs). Numerical results also show that an LOA can have a noise figure about 2 dB less than that of the SOA gain clamped by a distributed Bragg reflector laser.

22 citations

Patent
04 Mar 1993
TL;DR: In this article, a harmonic modulation device of waveguide type including a semiconductor laser, a waveguide for generating a nonlinear optical harmonic of the laser by keeping phase matching, and electrodes disposed on the waveguide.
Abstract: There is disclosed a harmonic modulation device of waveguide type including a semiconductor laser, a waveguide for generating a nonlinear optical harmonic of the semiconductor laser by keeping phase matching, means for leading an optical beam of the semiconductor laser to the waveguide, electrodes disposed on the waveguide, and means for modulating a refractive index of the waveguide electro-optically to modulate a phase matching condition and thereby modulate an intensity of the harmonic.

22 citations

Journal Article
Yao Jian-Quan1
TL;DR: In this paper, the development of all solid state laser technology, nonlinear optical frequency conversion and quasi-phase matching technology, as well as their important status in the laser and opto-electronic fields are summarized.
Abstract: Among different kinds lasers, laser diode pumped solid state lasers (all solid state lasers or LDPSSL, DPL) have become main direction of laser technology now which have a lot of advanced such as high conversion efficiency, good beam quality, good stability, long life and wide operated wavelength of laser media. DPL combines with nonlinear optical frequency conversion technology will extend more wide wavelength region. The developments of all solid state laser technology, nonlinear optical frequency conversion and quasi-phase matching technology, as well as their important status in the laser and opto-electronic fields are summarized in this paper. The basic principle, characteristics, critical technologies and their extensively useful perspective are also described.

22 citations

Journal ArticleDOI
TL;DR: In this article, the material gain of equal width InGaAsP/InGaAsp multi-quantum well active layers is calculated solving the Luttinger-Kohn Hamiltonian, including tetragonal strain and confinement effects.
Abstract: The material gain of equal width InGaAsP/InGaAsP multi–quantum well active layers is calculated solving the Luttinger–Kohn Hamiltonian, including tetragonal strain and confinement effects. The calculated optical bandwidth reaches 150 nm with a maximum polarization sensitivity of 1 dB between transverse electric (TE) and transverse magnetic (TM) emission over the −3 dB optical bandwidth. The corresponding device characterized by amplified spontaneous emission measurements shows an optical bandwidth with constant TE/TM ratio of almost 100 nm which can be improved up to 113 nm by increasing the barrier material band gap energy. Further enlargement of the optical bandwidth is expected by reducing the quantum well width.

22 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20233
20229
20211
20201
20187
201789