Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
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TL;DR: In this paper, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is observed in the injection-locked laser system, which approaches the maximum modulation bandwidth set by the K factor for the free-running laser.
Abstract: Significant enhancement in modulation bandwidth of semiconductor lasers subject to strong optical injection is experimentally and theoretically studied. At least two folds of improvement is achieved under study. By using an optical probing method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is observed in the injection-locked laser system. The achieved bandwidth approaches the maximum modulation bandwidth set by the K factor for the free-running laser. Discussions are presented for an even larger modulation bandwidth using the injection-locking technique.
102 citations
TL;DR: Optical feedback-induced changes in the output spectra of several GaAlAs laser operating at 0.83 µm are described in this article. But this work assumes that the feedback radiation from a mirror 60 cm away from the laser is controlled in intensity and phase.
Abstract: Optical feedback-induced changes in the output spectra of several GaAlAs lasers operating at 0.83 µm are described. The feedback radiation obtained from a mirror 60 cm away from the laser is controlled in intensity and phase. Spectral line narrowing or broadening is observed in each laser depending on the feedback conditions. Minimum linewidths observed with feedback are less than 100 kHz. Improved wavelength stability is also obtained with optical feedback resulting in 15 dB less phase noise. Analytical model for the three-mirror cavity is developed to explain these observations.
102 citations
TL;DR: In a suitably designed semiconductor laser, spontaneously emitted photons with energies above the absorption edge can be reabsorbed in the active layer and can decrease the current density that must be supplied to reach the lasing threshold as mentioned in this paper.
Abstract: In a suitably designed semiconductor laser, spontaneously emitted photons with energies above the absorption edge can be reabsorbed in the active layer and can decrease the current density that must be supplied to reach the lasing threshold. The magnitude of the threshold reduction is estimated to be about 20% in a GaAs double‐heterostructure laser at room temperature.
102 citations
TL;DR: In this paper, a spin-eliminated (class A) description of laser polarization was developed and various model parameters can be extracted from the experimental data, such as the relative strength of the polarization fluctuations and the rate of polarization switches.
Abstract: We report, theoretically and experimentally, how polarization fluctuations in vertical-cavity semiconductor lasers are affected by optical anisotropies. We develop a spin-eliminated (class A) description of laser polarization and show how the various model parameters can be extracted from the experimental data. In practice, the linear anisotropies are often much stronger than the nonlinear anisotropies, so that the polarization modes defined by the linear anisotropies form a useful basis. For this case we derive a one-dimensional model for polarization noise, with simple expressions for the relative strength of the polarization fluctuations and the rate of polarization switches. For the other, more extreme, case where the nonlinear anisotropies are as strong (or even stronger) than the linear anisotropies, the spin-eliminated description remains valid. However, in this case the concept of polarization modes is shown to lose its meaning, as a strong four-wave-mixing peak appears in the optical spectrum and polarization fluctuations become highly nonuniform.
102 citations
TL;DR: In this paper, a theory for describing nonequilibrium dynamics in a semiconductor quantum-dot laser is presented, which is applied to a microcavity laser with a gain region consisting of an inhomogeneous distribution of quantum dots, a quantum well wetting layer, and injection pumped bulk regions.
Abstract: A theory for describing nonequilibrium dynamics in a semiconductor quantum-dot laser is presented. This theory is applied to a microcavity laser with a gain region consisting of an inhomogeneous distribution of quantum dots, a quantum-well wetting layer, and injection pumped bulk regions. Numerical results are presented and the effects of spectral hole burning, plasma heating, and many-body effects are analyzed.
102 citations