Topic
Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
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TL;DR: Wideband spectral phase correlation is demonstrated from a multiwavelength mode-locked semiconductor laser, and may lead to novel methods for directly generating ultrafast subpicosecond optical pulse sequences with spectrally tailored amplitude and phase characteristics from actively mode-lock semiconductor lasers.
Abstract: Wideband spectral phase correlation is demonstrated from a multiwavelength mode-locked semiconductor laser. By use of frequency-resolved optical gating techniques, significant phase correlation was observed between multiple intracavity oscillating wavelengths, with wavelength separations of ?1 nm. The resultant temporal characteristics show a substantial modulation owing to the spectral coupling induced by intracavity-generated four-wave mixing. This result may lead to novel methods for directly generating ultrafast subpicosecond optical pulse sequences with spectrally tailored amplitude and phase characteristics from actively mode-locked semiconductor lasers.
87 citations
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TL;DR: In this paper, the small-signal FIR gain coefficients have been measured as functions of the relevant parameters for two transitions in CH 3 OH and three in CH 2 F 2.
Abstract: This study is an investigation of the FIR radiation amplification in CW laser excited gases so essential for a complete quantitative understanding of the FIR laser cycle. The small-signal FIR gain coefficients have been measured as functions of the relevant parameters for two transitions in CH 3 OH and three in CH 2 F 2 . The measurements, demonstrating the influence of coherent pumping have been compared to quantum-mechanical calculations of a three-level system, interacting resonantly with two coherent fields. The good agreement found between theory and measurements indicates the correctness of the theory in predicting the gain properties of the CW FIR lasers. Also FIR gain saturations have been measured directly and exhibit the expected features.
87 citations
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TL;DR: In this paper, the optical waveguide, fabrication procedure, major optical properties, and reliability of buried-heterostructure (BH) AlGaAs lasers are described, which are characterized by low threshold currents (10-20 mA), nearly symmetric beam profile, singlemode oscillation, high linearity, small relaxation oscillations, and long-term mode stability.
Abstract: The optical waveguide, fabrication procedure, major optical properties, and reliability of buried-heterostructure (BH) AlGaAs lasers are described. BH lasers are characterized by low threshold currents (10-20 mA), nearly symmetric beam profile, single-mode oscillation, high linearity, small relaxation oscillations, and long-term mode stability. Moreover, BH lasers with a buried optical guide provide CW output powers of 10-20 mW with an overall power conversion efficiency as high as 35 percent.
86 citations
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TL;DR: In this article, a two-dimensional simulator for assisting in designing semiconductor lasers is developed, where Poisson's equation and the current continuity equations for electrons and holes as well as the wave equation and rate equation for photons are numerically solved.
Abstract: A two-dimensional simulator for aid in designing semiconductor lasers is developed. Poisson's equation and the current continuity equations for electrons and holes as well as the wave equation and rate equation for photons are numerically solved. Heterojunctions and carrier degeneracy are rigorously treated, and analytical results on channeled-substrate-planar lasers are presented to demonstrate the simulator. Reasonable agreement is found between calculated and experimental results, and calculated results clarify precisely the operation mechanism of semiconductor lasers. The present work enables computer simulation for the first time to be a practical design aid in research and development of various kinds of semiconductor lasers.
86 citations
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TL;DR: In this article, the authors present a review of the external cavity tunable laser systems with edge emitting diode (EDD) diode lasers set-up in a hybrid configuration.
Abstract: External cavity tunable lasers have been around for many years and now constitute a large group of semiconductor lasers featuring very unique properties. The present review has been restricted to the systems based on the edge emitting diode lasers set-up in a hybrid configuration. The aim was to make the paper as concise as possible without sacrificing, however, most important details. We start with short description of the fundamentals essential for operation of the external cavity lasers to set the stage for explanation of their properties and some typical designs. Then, semiconductor optical amplifiers used in the external cavity lasers are highlighted more in detail as well as diffraction gratings and other types of wavelength-selective reflectors used to provide optical feedback in these lasers. This is followed by a survey of designs and properties of various external cavity lasers both with mobile bulk gratings and with fixed wavelength selective mirrors. The paper closes with description of some recent developments in the field to show prospects for further progress directed towards miniaturization and integration of the external cavity laser components used so far to set-up hybrid systems.
86 citations