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Semiconductor optical gain
About: Semiconductor optical gain is a research topic. Over the lifetime, 5997 publications have been published within this topic receiving 96505 citations.
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TL;DR: Using an AlGaAs-GaAs waveguide structure with a six-stack InAs-InGaAs "dots-in-a-well" (DWELL) gain region having an aggregate dot density of approximately 8/spl times/10/sup 11/ cm/sup -2/, an optical gain of 18 dB at 1300 nm was obtained in a 2.4mm-long amplifier at 100-mA pump current.
Abstract: Using an AlGaAs-GaAs waveguide structure with a six-stack InAs-InGaAs "dots-in-a-well" (DWELL) gain region having an aggregate dot density of approximately 8/spl times/10/sup 11/ cm/sup -2/, an optical gain of 18 dB at 1300 nm has been obtained in a 2.4-mm-long amplifier at 100-mA pump current. The optical bandwidth is 50 nm, and the output saturation power is 9 dBm. The dependence of the amplifier parameters on the pump current and the gain recovery dynamics has also been studied.
86 citations
TL;DR: In this paper, the conditions required to achieve bistability in two-mode semiconductor laser via the nonlinearity associated with gain saturation are discussed, and the laser can be switched between the bistable states through coherent or incoherent optical control.
Abstract: The conditions required to achieve bistability in two‐mode semiconductor lasers via the nonlinearity associated with gain saturation are discussed. The laser can be switched between the bistable states through coherent or incoherent optical control. Wavelength bistability in such a laser is demonstrated experimentally.
86 citations
TL;DR: In this paper, the authors demonstrate that careful tuning of the waveguide mode in flexible distributed feedback lasers can allow lasing action to occur in organic thin films in the presence of contacting electrodes with virtually no difference when compared to metal free devices.
Abstract: Optical losses in waveguides comprising metallic contacts are thought to be a major hurdle to the realization of organic laser diodes. We demonstrate here that careful tuning of the waveguide mode in flexible distributed feedback lasers can allow lasing action to occur in organic thin films in the presence of contacting electrodes with virtually no difference when compared to metal free devices. A metallic electrode is most suited as the bottom contact between the polymer and the substrate as it reduces mode leakage into the substrate and enhances modal gain. In contrast, a thin transparent electrode such as a metal oxide is preferable for the top electrode, where confinement is not a problem.
86 citations
TL;DR: In this article, a fully microscopic model is used to calculate absorption/gain and spontaneous emission for GaInNAs quantum-well laser gain media, which can be used to derive the optical properties for the regime of semiconductor laser operation from low density photo luminescence spectra.
Abstract: A fully microscopic model is used to calculate absorption/gain and spontaneous emission for GaInNAs quantum-well laser gain media. It is demonstrated how this approach can be used to derive the optical properties for the regime of semiconductor laser operation from low density photo luminescence spectra which can be obtained from simple experiments. Numerical results are presented showing that increased well depth leads to strongly increased differential gains and gain amplitudes and pronounced shifts of the gain maximum with increasing density. On the basis of a quantum Blotzmann model for the incoherent carrier dynamics it is shown, that high carrier confinement can lead to unusually long carrier capture times. Furthermore, temperature dependent bandstructure parameters for GaInNAs for the applied 10-band k · p -model are presented that have been derived from comparison to recent experimental data.
86 citations
Book•
01 Jan 1991
TL;DR: In this article, a review of the structures and properties of Fabry Perot cavity junction lasers is presented, as well as the basic properties of semiconductor junction lasers and their properties.
Abstract: 1. Preface. 2. Physical principles of the operation of semiconductor lasers. 3. Basic techniques for fabricating semiconductor lasers. 4. The design and basic characteristics of semiconductor lasers. 5. Review of the structures and properties of Fabry Perot cavity junction lasers. 6. Structures of distributed feedback lasers. 7. Dynamic properties of junction lasers and methods for improving their frequency discrimination. 8. Thermal effects occurring in semiconductor lasers. 9. Principles of modelling the physical phenomena in junction lasers. 10. Reliability of LEDs and junction lasers. References. Subject Index. List of main symbols. List of abbreviations.
85 citations